SPN02N60C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Ultra low effective capacitances
• Extreme dv/dt rated
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C A
TA=70 °C
Pulsed drain current1) ID,pulse TA=25 °C
Avalanche energy, single pulse EAS ID=0.9 A, VDD=50 V 50 mJ
Avalanche energy, repetitive tAR
1),2) EAR ID=1.8 A, VDD=50 V
Avalanche current, repetitive tAR
1) IAR A
Drain source voltage slope dv/dtID=1.8 A, VDS=480 V,
Tj=125 °C V/ns
Gate source voltage VGS static V
VGS AC (f>1 Hz)
Power dissipation Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg °C
±20
±30
1.8
-55 ... 150
0.07
1.8
50
Value
0.4
0.3
5.4
VDS @ Tj,max 650 V
RDS(on),max 2.5 Ω
ID0.4 A
Product Summary
Type Package Ordering Code Marking
SPN02N60C3 SOT223 Q67040-S4553 02N60C3
SOT223
Rev. 2.3 page 1 2005-02-21
SPN02N60C3
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction -
soldering point RthJS - 30 - K/W
RthJA
SMD version, device
on PCB, minimal
footprint
- 110 -
SMD version, device
on PCB, 6 cm2cooling
area2)
-70-
Soldering temperature Tsold
1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 600 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=0.25 A - 700 -
Gate threshold voltage VGS(th) VDS=VGS, ID=0.08 mA 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=600 V, VGS=0 V,
Tj=25 °C - 0.5 1 µA
VDS=600 V, VGS=0 V,
Tj=150 °C --50
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=1.1 A,
Tj=25 °C - 2.0 2.5 Ω
VGS=10 V, ID=1.1 A,
Tj=150 °C - 5.2 -
Gate resistance RGf=1 MHz, open drain -9-
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=1.1 A - 1.75 - S
Values
Thermal resistance, junction -
ambient
Rev. 2.3 page 2 2005-02-21
SPN02N60C3
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 200 - pF
Output capacitance Coss -90-
Reverse transfer capacitance Crss -4-
Effective output capacitance, energy
related3) Co(er) -8-
Effective output capacitance, time
related4) Co(tr) -16-
Turn-on delay time td(on) -6-ns
Rise time tr-3-
Turn-off delay time td(off) -68-
Fall time tf-1230
Gate Charge Characteristics
Gate to source charge Qgs - 1.6 - nC
Gate to drain charge Qgd -4-
Gate charge total Qg-1013
Gate plateau voltage Vplateau - 5.5 - V
4) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
3) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=350 V,
VGS=10 V, ID=1.8 A,
RG=25 Ω
VDD=420 V, ID=1.8 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
1) Pulse width limited by maximum temperature Tj,max only
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3 page 3 2005-02-21
SPN02N60C3
Parameter Symbol Conditions Unit
min. typ. max.
Reverse Diode
Diode continuous forward current IS- - 0.4 A
Diode pulse current IS,pulse - - 5.4
Diode forward voltage VSD
VGS=0 V, IF=0.4 A,
Tj=25 °C - 0.82 1.05 V
Reverse recovery time trr - 200 350 ns
Reverse recovery charge Qrr - 1.3 - µC
Peak reverse recovery current Irrm -9-A
Peak rate of fall of reverse recovery
current dirr /dtTj=25 °C - 200 - A/µs
T
y
pical Transient Thermal Characteristics
VR=420 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
5) Cth6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
RthCA=0 K/W.
Symbol Value Unit Symbol Value Unit
typ. typ.
Rth1 0.113 K/W Cth1 0.0000144 Ws/K
Rth2 0.156 Cth2 0.000087
Rth3 0.875 Cth3 0.000123
Rth4 3.63 Cth4 0.0005
Rth5 8.29 Cth5 0.012
Cth6 0.055)
Rev. 2.3 page 4 2005-02-21
SPN02N60C3
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C
parameter: D=t p/Tparameter: VGS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 40 80 120 160
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
101
100
10-1
10-2
10-3
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
102
101
100
10-1
10-2
tp [s]
ZthJS
[K/W]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
1
2
3
4
5
0 5 10 15 20
VDS [V]
ID [A]
Rev. 2.2 page 5 2004-10-04
SPN02N60C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=1.1 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
4 V 4.5 V 5 V 5.5 V 6 V
20 V
0
2
4
6
8
10
12
14
0 0.5 1 1.5 2 2.5 3
ID [A]
RDS(on) [Ω]
typ
98 %
0
1
2
3
4
5
6
7
8
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
25 °C
150 °C
0
1
2
3
4
5
6
0246810
VGS [V]
ID [A]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
0.5
1
1.5
2
2.5
3
0 5 10 15 20
VDS [V]
ID [A]
Rev. 2.3 page 6 2005-02-21
SPN02N60C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=1.8 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche SOA 12 Avalanche energy
IAR=f(tAR)EAS=f(Tj); ID=0.9 A; VDD=50 V
parameter: Tj(start)
0
10
20
30
40
50
60
20 60 100 140 180
Tj [°C]
EAS [mJ]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF [A]
125 °C 25 °C
103
102
101
100
10-1
10-2
10-3
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
tAR [µs]
IAV [A]
0.2 VDS(max)
0.8 VDS(max)
0
2
4
6
8
10
12
0246810
Qgate [nC]
VGS [V]
Rev. 2.3 page 7 2005-02-21
SPN02N60C3
13 Drain-source breakdown voltage 14 Typ. capacitances
VBR(DSS)=f(Tj); ID=0.25 mA C=f(VDS); VGS=0 V; f=1 MHz
15 Typ. Coss stored energy
Eoss=f(V DS)
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
Ciss
Coss
Crss
104
103
102
101
100
0 100 200 300 400 500
VDS [V]
C [pF]
0
0.4
0.8
1.2
1.6
2
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
Rev. 2.3 page 8 2005-02-21
SPN02N60C3
Definition of diode switching characteristics
Rev. 2.3 page 9 2005-02-21
SPN02N60C3
SOT-223
Rev. 2.3 page 10 2005-02-21
SPN02N60C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2000
All Rights Reserved.
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Rev. 2.3 page 11 2005-02-21
