January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V RDS(ON) = 0.035 @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 9 nC). High performance trench technology for extremely low These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. RDS(ON). SuperSOTTM-6 SO-8 SOT-23 SuperSOTTM-8 High power and current handling capability. SOIC-16 SOT-223 D2 D2 D1 D1 49 SO-8 20 pin 1 Absolute Maximum Ratings Symbol Parameter S1 G1 S2 G2 5 4 6 3 7 2 8 1 TA = 25oC unless other wise noted Si4920DY Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Drain Current - Continuous 6 A (Note 1a) - Pulsed PD TJ,TSTG Power Dissipation for Single Operation 20 (Note 1a) 2 (Note 1b) 1.6 (Note 1c) 0.9 Operating and Storage Temperature Range W -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W (c) 2001 Fairchild Semiconductor International Si4920DY Rev.A Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 A 30 BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV /oC 23 TJ = 55C 1 A 10 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 3 V ON CHARACTERISTICS VGS(th) (Note 2) Gate Threshold Voltage VDS = VGS, ID = 250 A 1 VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A o 1.5 mV /oC -4 TJ =125C VGS = 4.5 V, I D = 5 A 0.023 0.028 0.036 0.044 0.029 0.035 20 ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, I D= 6 A 18 S A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 830 pF 185 pF 80 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS= 15 V, I D = 1 A 6 12 ns tr Turn - On Rise Time VGS = 10 V , RGEN = 6 10 18 ns tD(off) Turn - Off Delay Time 18 29 ns 5 12 ns 9 13 nC tf Turn - Off Fall Time Qg Total Gate Charge VDS = 15 V, I D = 7.5 A, Qgs Gate-Source Charge VGS = 5 V Qgd Gate-Drain Charge 2.8 nC 3.1 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.3 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. Si4920DY Rev.A Typical Electrical Characteristics 32 5 5.5V 4.5V 4.0V RDS(ON) , NORMALIZED VGS =10V 3.5V 24 16 3.0V 8 2.5V 0 0 1 2 3 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 40 3 3.0 V 2 3.5 V 4.5 V 10V 1 0 4 V GS = 2.5V 4 0 6 VDS , DRAIN-SOURCE VOLTAGE (V) R DS(ON) , ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 24 30 0.15 1.6 I D = 6A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 ID = 3A 0.12 0.09 0.06 TA = 125C 0.03 25C 0 -25 0 25 50 75 100 125 150 0 2 Figure 3. On-Resistance Variation Temperature. 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (C) with Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 25 I S , REVERSE DRAIN CURRENT (A) TJ = -55C V DS =5.0V 25C I D , DRAIN CURRENT (A) 18 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 20 125C 15 10 5 0 12 I D , DRAIN CURRENT (A) VGS = 0V TJ = 125C 1 25C 0.1 -55C 0.01 0.001 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si4920DYA Rev.A Typical Electrical Characteristics 1500 V DS = 5V I D = 6A C iss 10V 8 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 4 500 200 Coss 100 50 0 0.1 0 3 6 9 12 15 C rss f = 1 MHz V GS = 0 V 2 0.2 18 0.5 1 2 5 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 30 10 R (O DS N) LIM IT 100 1m 10m 2 10 0.5 1s 0.01 0.1 0.5 s s s 10s DC VGS =10V SINGLE PULSE RJA = 135C/W A TA = 25C 0.05 0m SINGLE PULSE R JA =135 C/W TA = 25C 25 us POWER (W) I D , DRAIN CURRENT (A) 100 50 20 15 10 5 1 2 5 10 30 0 0.01 50 0.1 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 10 50 100 300 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R JA (t) = r(t) * R JA R JA =135 C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t1 /t2 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. Si4920DY Rev.A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G