© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 8
1Publication Order Number:
MBR1035/D
MBR1035, MBR1045
SWITCHMODE™
Power Rectifiers
Features and Benefits
•Low Forward Voltage
•Low Power Loss/High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•10 A Total
•Pb−Free Packages are Available*
Applications
•Power Supply – Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94, V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
•ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MBR1035 TO−220
TO−220AC
CASE 221B
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
35 to 45 VOLTS
MBR1045 TO−220 50 Units/Rail
31, 4
MARKING
DIAGRAM
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MBR1035G TO−220
(Pb−Free)
50 Units/Rail
MBR1045G TO−220
(Pb−Free)
50 Units/Rail
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
B10x5 = Device Code
x = 3 or 4
KA = Diode Polarity
AY WWG
B10x5
KA
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR1035
MBR1045
VRRM
VRWM
VR35
45
V
Average Rectified Forward Current
(TC = 135°C, Per Device)
IF(AV)
10
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TC = 135°C)
IFRM 10 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change
(Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, Tj = 125°C)
(iF = 20 Amps, Tj = 125°C)
(iF = 20 Amps, Tj = 25°C)
vF
−
−
−
0.55
0.67
0.78
0.57
0.72
0.84
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
iR
−
−
5.3
0.008
15
0.1
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBR1035, MBR1045
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3
Figure 1. Maximum Forward Voltage
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
Figure 2. Typical Forward Voltage
0.2
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
0.2
100°C
25°C100°C
25°C
MBR1035, MBR1045
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4
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.001
NUMBER OF CYCLES AT 60 Hz
101.0
200
100
50
30
20
3.010
, REVERSE CURRENT (mA)IR
20 3025
100
2.0 100
70
IFSM, PEAK HALF-WAVE CURRENT (AMPS)
35 40 5045
Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability
7.05.0 3020 7050
TJ = 150°C
125°C
100°C
75°C
25°C
(CAPACITIVELOAD)
IPK
IAV
+5
110
TC, CASE TEMPERATURE (°C)
15
10
5.0
0
TA, AMBIENT TEMPERATURE (°C)
800
16
8.0
4.0
2.0
0
40120
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
130 140
20
20 160
6.0
150 160
Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RqJA = 16°C/W
60 120100 140
2.00
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
8.0
5.0
4.0
2.0
0
TA, AMBIENT TEMPERATURE (°C)
800
5.0
4.0
2.0
1.0
0
404.0
, AVERAGE FORWARD POWER DISSIPATION (WATTS)PF(AV)
6.0 108.0
10
20 160
3.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
12 1614
Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air
60 120100 140
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
14
10
12
3.0
1.0
9.0
7.0
6.0
dc
TJ = 150°C
SINE WAVE
RESISTIVE LOAD
SQUARE
WAVE
(CAPACITIVELOAD)
IPK
IAV
+5
20
10
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
20
10
IPK
IAV
+p(RESISTIVELOAD)
(CAPACITIVELOAD)
IPK
IAV
+20, 10, 5
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
IPK
IAV
+p(RESISTIVELOAD)
dc
SQUARE
WAVE
IPK
IAV
+p(RESISTIVELOAD)
(CAPACITIVELOAD)
IPK
IAV
+20, 10, 5
RATED VOLTAGE APPLIED
RqJA = 60°C/W
MBR1035, MBR1045
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5
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01 0.1 1.0 10 100
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
Ppk Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp.
1000
Figure 9. Thermal Response
0.07
0.7
VR, REVERSE VOLTAGE (VOLTS)
0.5
1500
1000
500
300
150
0.10.05 50
700
C, CAPACITANCE (pF)
Figure 10. Capacitance
0.2 2.01.0 5.0
200
MAXIMUM
TYPICAL
10 20
MBR1035, MBR1045
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6
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE E
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBR1035/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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