PMEG6030EP,115 - NXP Semiconductors

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

Average forward current: IF(AV) ≤ 3 A

Reverse voltage: VR ≤ 60 V

Low forward voltage

High power capability due to clip-bond technology

AEC-Q101 qualified

Small and flat lead SMD plastic package

1.3 Applications

Low voltage rectification

High efficiency DC-to-DC conve rs ion

Switch Mode Power Supply (SMPS)

Reverse polarity protection

Low power consumption applications

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

Rev. 01 — 21 January 2010 Product data sheet

Table 1. Quick reference data

Tj = 25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

IF(AV) average forward current square wave;

δ = 0.5;

f = 20 kHz

Tamb ≤ 50 °C[1] - - 3 A

Tsp ≤ 135 °C - - 3 A

VRreverse voltage - - 60 V

VFforward voltage IF = 3 A - 460 530 mV

IRreverse current VR = 60 V - 80 200 μA

Product data sheet Rev. 01 — 21 January 2010 2 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1cathode [1]

2anode 12

sym00

Table 3. Ordering i nformation

Type number Package

Name Description Version

PMEG6030EP -plastic surface-mounted package; 2 leads SOD128

Table 4. Marking codes

Type number Marking code

PMEG6030EP AB

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage Tj = 25 °C - 60 V

IF(AV) average forward current square wave;

δ = 0.5;

f = 20 kHz

Tamb ≤ 50 °C[1] - 3 A

Tsp ≤ 135 °C - 3 A

IFSM non-repetitive peak

forward current square wave;

tp = 8 ms [2] -50 A

Ptot total power dissipation Tamb ≤ 25 °C[3][4] -625 mW

[3][5] -1050 mW

[3][1] -2100 mW

Product data sheet Rev. 01 — 21 January 2010 3 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2] Tj = 25 °C prior to surge.

[3] Reflow soldering is the only recommended soldering method.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[6] Soldering point of cathode tab.

Tjjunction temperature -150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2]

[3] --200 K/W

[4] --120 K/W

[5] --60 K/W

Rth(j-sp) thermal resistance from

junction to solder point [6] --12 K/W

Product data sheet Rev. 01 — 21 January 2010 4 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

FR4 PCB, standard footprint

Fig 1. Transient thermal impe da n ce from junc tion to ambient as a function of p ulse duration; typical values

FR4 PCB, mounting pad for cathode 1 cm2

Fig 2. Transient thermal impe da n ce from junc tion to ambient as a function of p ulse duration; typical values

006aab666

102

103

Zth(j-a)

(K/W)

10−1

tp (s)

10−3102103

10110−210−1

duty cycle =

0.75

0.5 0.33

0.2

0.25

0.1

0.05

0.02 0.01

006aab667

102

103

Zth(j-a)

(K/W)

10−1

tp (s)

10−3102103

10110−210−1

duty cycle =

10.75

0.5 0.33

0.2

0.25

0.1

0.05

0.02 0.01

Product data sheet Rev. 01 — 21 January 2010 5 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

7. Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 3. Transient thermal impe da n ce from junc tion to ambient as a function of p ulse duration; typical values

006aab668

tp (s)

10−3102103

10110−210−1

102

Zth(j-a)

(K/W)

10−1

duty cycle =

10.75

0.5

0.33

0.2

0.25

0.1

0.05

0.02 0.01

Table 7. Characteristics

Tj = 25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF = 0.1 A - 290 330 mV

IF = 0.5 A - 340 400 mV

IF = 1 A - 380 440 mV

IF = 1.5 A - 400 470 mV

IF = 2 A - 430 500 mV

IF = 3 A - 460 530 mV

IRreverse current VR = 5 V - 4 - μA

VR = 10 V - 5 - μA

VR = 60 V - 80 200 μA

Cddiode capacitance f = 1 MHz

VR = 1 V - 360 -pF

VR = 10 V - 120 -pF

Product data sheet Rev. 01 — 21 January 2010 6 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

(1) Tj = 125 °C

(2) Tj = 85 °C

(3) Tj = 25 °C

(4) Tj = −40 °C

Fig 4. Forward current as a function of forward

voltage; typical values Fig 5. Reverse current as a function of reverse

voltage; typical values

f = 1 MHz; Tamb = 25 °C

Fig 6. Diode capacitance as a function of reverse voltage; typical values

006aab881

10−2

10−3

10−1

(A)

10−4

VF (V)

0.0 0.70.5 0.60.40.30.1 0.2

(1)

(2)

(3) (4) (5)

006aab882

VR (V)

0604020

10−1

10−2

10−3

10−4

10−5

10−6

10−7

(A)

10−8

(1)

(2)

(3)

(4)

VR (V)

0604020

006aab883

700

(pF)

100

200

300

400

500

600

Product data sheet Rev. 01 — 21 January 2010 7 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

Tj = 150 °C

(1) δ = 0.1

(2) δ = 0.2

(3) δ = 0.5

(4) δ = 1

Tj = 125 °C

(1) δ = 1

(2) δ = 0.9

(3) δ = 0.8

(4) δ = 0.5

Fig 7. Average forwar d po we r diss ipat io n as a

function of average forward current;

typical values

Fig 8. Average reverse power dissipation as a

function of reverse voltage; typica l va lu es

FR4 PCB, standard footprint

Tj = 150 °C

(1) δ = 1; DC

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

FR4 PCB, mounting pad for cathode 1 cm2

Tj = 150 °C

(1) δ = 1; DC

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig 9. Average forward current as a function of

ambient temperature ; typi cal values Fig 10. Average forward current as a function of

ambient temperature; typical values

IF(AV) (A)

0.0 5.04.02.0 3.01.0

006aab884

0.8

1.2

0.4

1.6

2.0

PF(AV)

(W)

0.0

(1)

(2)

(3)

(4)

006aab885

VR (V)

0604020

1.0

1.5

0.5

2.0

2.5

PR(AV)

(W)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

0 50 100 150 1751257525

006aab886

1.5

3.0

4.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

0 50 100 150 1751257525

006aab887

1.5

3.0

4.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 21 January 2010 8 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

Ceramic PCB, Al2O3, standard footprint

Tj = 150 °C

(1) δ = 1; DC

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Tj = 150 °C

(1) δ = 1; DC

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig 11. Average forward current as a function of

ambient temperature ; typi cal values Fig 12. Average forward current as a function of

solder point temperature; typical values

Tamb (°C)

0 50 100 150 1751257525

006aab888

1.5

3.0

4.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tsp (°C)

0 50 100 150 1751257525

006aab889

1.5

3.0

4.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 21 January 2010 9 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

8. Test information

The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are

calculated acco rd in g to the eq u atio n s: with IM defined as peak current,

at DC, and with IRMS defined as RMS current.

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

Fig 13. Duty cycle definition

006aaa812

duty cycle δ =

IFAV() IMδ×=

IRMS IFAV()

=IRMS IMδ×=

Fig 14. Package outline SOD128

07-09-12Dimensions in mm

1.1

0.9

0.22

0.10

0.6

0.3

5.0

4.4

4.0

3.6

1.9

1.6

2.7

2.3

Product data sheet Rev. 01 — 21 January 2010 10 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3 000

PMEG6030EP SOD128 4 mm pitch, 12 mm tape and reel -115

Reflow soldering is the only recommended soldering method.

Fig 15. Reflo w soldering foo tprin t SOD128

solder lands

solder resist

occupied area

solder paste

2.53.4 2.1

(2×)

1.9

(2×)

4.4

4.2

6.2

1.2

(2×)

1.4

(2×)sod128_

Dimensions in mm

Product data sheet Rev. 01 — 21 January 2010 11 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMEG6030EP_1 20100120 Product data sheet - -

Product data sheet Rev. 01 — 21 January 2010 12 of 13

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

13.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does no t give any repr esenta tions or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause pe rmanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Char acteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

NXP Semiconductors PMEG6030EP

3 A low VF MEGA Schottky barrier rectifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 January 2010

Document identifier: PMEG6030EP_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13