N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt VDS
*R
DS(on)=16Ω
APPLICATIONS
* Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 240 V
Continuo us Drain Cur rent at Tamb=25°C ID160 mA
Pulsed Drain Current IDM 2A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 240 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1 3 V ID=1mA, V DS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=240 V, VGS=0
VDS=192 V, VGS=0V,
T=125°C(2)
On-State Drain Cu rrent(1) ID(on) 500 mA VDS=25 V , VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 16 ΩVGS=10V,ID=250mA
Forward Transconductance
(1)(2) gfs 100 mS VDS=25V,ID=250mA
Input Capacitance (2) Ciss 85 pF
Common So urce Output
Capacitance (2) Coss 20 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 7pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 16 ns
Fall Time (2)(3) tf8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (
3
E-Line
TO92 Compatible
3-350
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS-Drain Source Vo ltage (Volts)
I
D(ON)
On State Drain Current(Amps)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
Transf er Charact eri stics
Normal ised R
DS(on)
and V
GS(th)
V Temperature
Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
0 -60 -40 -20 0 20 40 60 80 100 120 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.4
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=0.25A
0246810
1.0
0.8
0.6
0.4
0
0.2
020406080100
80µs pulse
2.0
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
0246810
14
12
10
6
2
0
4
8
16
18
20
VDS-Drain Source (Volts)
RDS(ON) -Drain Source Resistance (Ω)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
02 4 6 8 10
2.0
VGS=10V
8V
6V
5V
4V
3V
2V
VGS=10V
7V
5V
4V
3V
2V
ID=
1A
500mA
100mA
VDS=25V
VDS=10V
I
D(on) -
On -State Drain Current (Amps)
I
D(ON) -
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=10V
ID=1mA
VGS=VDS
1110
100
10
20
ID=
1A
500mA
I00mA
ZVN0124A ZVN0124A
3-351
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt VDS
*R
DS(on)=16Ω
APPLICATIONS
* Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 240 V
Continuo us Drain Cur rent at Tamb=25°C ID160 mA
Pulsed Drain Current IDM 2A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 240 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1 3 V ID=1mA, V DS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=240 V, VGS=0
VDS=192 V, VGS=0V,
T=125°C(2)
On-State Drain Cu rrent(1) ID(on) 500 mA VDS=25 V , VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 16 ΩVGS=10V,ID=250mA
Forward Transconductance
(1)(2) gfs 100 mS VDS=25V,ID=250mA
Input Capacitance (2) Ciss 85 pF
Common So urce Output
Capacitance (2) Coss 20 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 7pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 16 ns
Fall Time (2)(3) tf8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (
3
E-Line
TO92 Compatible
3-350
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS-Drain Source Vo ltage (Volts)
I
D(ON)
On State Drain Current(Amps)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
Transf er Charact eri stics
Normal ised R
DS(on)
and V
GS(th)
V Temperature
Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
0 -60 -40 -20 0 20 40 60 80 100 120 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.4
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=0.25A
0246810
1.0
0.8
0.6
0.4
0
0.2
020406080100
80µs pulse
2.0
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
0246810
14
12
10
6
2
0
4
8
16
18
20
VDS-Drain Source (Volts)
RDS(ON) -Drain Source Resistance (Ω)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
1.4
1.2
1.0
0.6
0.2
0
0.4
0.8
1.6
1.8
02 4 6 8 10
2.0
VGS=10V
8V
6V
5V
4V
3V
2V
VGS=10V
7V
5V
4V
3V
2V
ID=
1A
500mA
100mA
VDS=25V
VDS=10V
I
D(on) -
On -State Drain Current (Amps)
I
D(ON) -
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=10V
ID=1mA
VGS=VDS
1110
100
10
20
ID=
1A
500mA
I00mA
ZVN0124A ZVN0124A
3-351
TYP I CAL CHARACTE RI STICS
Transconductance v drain current
ID(On)-Drain Current (Amps)
0 0.2 0.4 0.6 0.8 1.0
500
400
300
100
0
25V
VDS=
g
fs
-Forward transconductance (mS)
200
Transconductance v gate-source voltage
VGS-Gate-Source Voltage (Volts)
02 4 6 .810
500
400
300
100
0
25V
VDS=
200
g
fs
-Forward transconductance (mS)
Capacitance v drain-source voltage
C-Capacitance (pF)
30
0
10
20
40
50
60
0102030 40 50
VDS -Drain-Source Voltage (Volts)
Ciss
Coss
Crss
70
6
0
2
4
8
0 0.4 0.8 1.2 1.6 2.0
10
VGS-Gate-Source Voltage (Volts)
Gate charge v gate-source voltage
Q-Charge (nC)
ID=700mA 50V
100V
VDS=
180V
0.2 0.6 1.0 1.4 1.8
Power v temperature derating curve (ambient)
40 80 120 160 200
P
D
-Power Dissipation (Watts)
.20 60 100 140 180
Tamb - Ambient Temperature (°C)
0.8
0.4
0.6
0.2
1.0
ZVN0124A
3-352
