UF3001UF3007 VISHAY 3.0A UltraFast Rectifier Features Diffused junction Ultrafast switching for high efficiency High current capability and low forward voltage drop @ Surge overload rating to 150A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings Vishay Lite-On Power Semiconductor Tj = 25C Repetitive peak reverse voltage UF3001 Vrru 50 Vv =Working peak reverse voltage UF3002 =VawM 100 Vv =DC Blocking voltage UF3003 =VpR 200 V UF3004 400 Vv UF3005 600 Vv UF3006 800 Vv UF3007 1000 Vv Peak forward surge current lesm 150 A Average forward current Ta=55C lFay 3 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics T; = 25C Forward voltage IF=3A UF30013003 Ve 1 Vv UF3004 Ve 1.3 Vv UF30053007 Ve 1.7 Vv Reverse current Tp=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, UF30013004 ter 50 ns rr=0.25A UF30053007 tre 75 | ns Diode capacitance VpR=4V, f=1MHz UF30013004 Cp 75 pF UF3005-3007 Cp 50 pF Thermal resistance RthJA 35 KAW junction to ambient Rev. A2, 24-Jun-98UF3001UF3007 Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 4 Single phase half-wave 1 it 0 0 2 50 75 100 125 150 175 15470 Tamb Ambient Temperature ( C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 100 UF3001UF3003 UF3004 < ~ 10 = 2 5 Oo RB 10 $ UF3005-UF3007 3 Le I i (Ol = Tj = 25C IF Pulse Width = 300 ps 2% Duty Cycle 0.01 0.6 10 14 1.8 15471 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage 200 8.3 ms Single Half-Sine-Wave 7) = 55C 100 legy7 Peak Forward Surge Current (A) 10 1 10 100 18472 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 100 _~ UF3001-UF3004 Le a oD UF3005-UF3007 2 Oo w g 10 Oo G 2 a I a Oo 1 1 10 100 15473 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Rev. A2, 24-Jun-98UF3001UF3007 VEISHAY Vishay Lite-On Power Semiconductor Dimensions in mm _ A poe | ay poe | ny LO-201AD [im Min Max Ay 25.40 - Ce oe B 1.20 7.50 technical drawings ( 1.20 1.30 according to DIN specifications D 430) 5.30 mes AlL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 1.1 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)UF3001UF3007 _ Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98