© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 0
1Publication Order Number:
2N3637/D
2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
•MIL−PRF−19500/357 Qualified
•Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol 2N3634/L
2N3635/L
2N3636/L
2N3637/L
Unit
Collector−Emitter Voltage VCEO −140 −175 Vdc
Collector−Base Voltage VCBO −140 −175 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current
− Continuous
IC1.0 Adc
Total Device Dissipation
@ TA = 25°C
PT1.0 W
Total Device Dissipation
@ TC = 25°C
PT5.0 W
Operating and Storage Junc-
tion Temperature Range
TJ, Tstg −65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 175 °C/W
Thermal Resistance, Junction to Case RqJC 35 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Level Device Package Shipping
JAN
JANTX
JANTXV
JANHC
2N3634
TO−39 Bulk
2N3635
2N3636
2N3637
2N3634L
TO−5 Bulk
2N3635L
2N3636L
2N3637L
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA) 2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO −140
−175
−
−
V
Emitter−Base Cutoff Current
(VEB = −3.0 V)
(VEB = −5.0 V)
IEBO −
−
−50
−10
nA
mA
Collector−Emitter Cutoff Current
(VCE = −100 V)
ICEO − −10 mA
Collector−Base Cutoff Current
(VCB = −100 V)
(VCB = −140 V) 2N3634, 2N3635
(VCB = −175 V) 2N3636, 2N3637
ICBO −
−
−
−100
−10
−10
nA
mA
mA
ON CHARACTERISTICS (Note 1)
DC Current Gain 2N3634, 2N3636
(IC = −0.1 mA, VCE = −10 V)
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −150 mA, VCE = −10 V)
hFE 25
45
50
50
30
−
−
−
150
−
−
DC Current Gain 2N3635, 2N3637
(IC = −0.1 mA, VCE = −10 V)
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −150 mA, VCE = −10 V)
hFE 55
90
100
100
60
−
−
−
300
−
−
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −50 mA, IB = −5.0 mA)
VCE(sat) −
−
−0.3
−0.6
V
Base−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −50 mA, IB = −5.0 mA)
VBE(sat) −
−0.65
−0.8
−0.9
V
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = −30 mA, VCE = −30 V, f = 100 MHz) 2N3634, 2N3636
2N3635, 2N3637
|hfe|
1.5
2.0
8.0
8.5
−
Small−Signal Current Gain
(IC = −10 mA, VCE = −10 V, f = 1 kHz) 2N3634, 2N3636
2N3635, 2N3637
hfe 40
80
160
320
−
Output Capacitance
(VCB = −20 V, IE = 0 A, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo −10
pF
Input Capacitance
(VEB = −1.0 V, IC = 0 A, 100 kHz ≤ f ≤ 1.0 MHz)
Cibo −75
pF
Noise Figure
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 100 Hz)
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 1.0 kHz)
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 10 kHz)
NF
−
−
−
5.0
3.0
3.0
dB
SWITCHING CHARACTERISTICS
Delay Time (Reference Figure 11 in MIL−PRF−19500/357) td−100 ns
Rise Time (Reference Figure 11 in MIL−PRF−19500/357) tr−100 ns
Storage Time (Reference Figure 11 in MIL−PRF−19500/357) ts−500 ns
Fall Time (Reference Figure 11 in MIL−PRF−19500/357) tf−150 ns
Turn−Off Time (Reference Figure 11 in MIL−PRF−19500/357) toff −600 ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
http://onsemi.com
3
PACKAGE DIMENSIONS
TO−5 3−Lead
CASE 205AA
ISSUE B
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.350 0.3708.89 9.40
B0.315 0.3358.00 8.51
C0.240 0.2606.10 6.60
D0.016 0.0210.41 0.53
E0.009 0.1250.23 3.18
F0.016 0.0190.41 0.48
N0.200 BSC5.08 BSC
H0.028 0.0340.71 0.86
J0.029 0.0400.73 1.02
K1.500 1.75038.10 44.45
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.350 0.3708.89 9.40
B0.315 0.3358.00 8.51
C0.240 0.2606.10 6.60
D0.016 0.0190.41 0.48
E0.009 0.1250.23 3.18
F0.016 0.0190.41 0.48
N0.200 BSC5.08 BSC
H0.028 0.0340.71 0.86
J0.029 0.0400.73 1.02
K0.500 0.58012.70 14.73
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
2N3637/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
l
Sales Representative
