© 2006 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 150 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 11 m Ω
Note 1
G = Gate D = Drain
S = Source TAB = Drain
DS99218E(01/06)
IXFK 180N15P
IXFX 180N15P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
VDSS = 150 V
ID25 = 180 A
RDS(on) ≤≤
≤≤
≤11 m ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200 ns
TO-264 (IXFK)
TAB
GDS
PolarTM HiPerFET
Power MOSFET
PLUS247 (IXFX)
TAB
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ150 V
VDS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 180 A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 380 A
IAR TC= 25°C60A
EAR TC= 25°C 100 mJ
EAS TC= 25°C4J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 830 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (IXFK) 1.13/10 Nm/lb.in.
FcMounting Force (IXFX) 20..120/4.5..25 N/lb
Weight TO-264 (IXFK) 10 g
PLUS247 (IXFX) 6 g
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 180N15P
IXFX 180N15P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, Note 1 55 86 S
Ciss 7000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 2250 pF
Crss 515 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 32 ns
td(off) RG = 3.3 Ω (External) 150 ns
tf36 ns
Qg(on) 240 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 55 nC
Qgd 140 nC
RthJC 0.18°C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 180 A
ISM Repetitive 380 A
VSD IF = 90A, VGS = 0 V, 1.3 V
Note 1
trr IF = 25 A, -di/dt = 100 A/µs 150 200 ns
QRM VR = 100 V, VGS = 0 V 0.6 µC
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
Fig. 2. Exte nded Output Characteristics
@ 25
º
C
0
40
80
120
160
200
240
280
320
012345678910
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characte ristics
@ 150
º
C
0
20
40
60
80
100
120
140
160
180
0 0.5 1 1.5 2 2.5 3 3.5 4
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8
Fig. 1. Output Characte ristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
0 0.4 0.8 1.2 1.6 2
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6
9V
Fig. 4. R
DS(on
) Norm alized to 0.5 I
D25
Value vs. Junction Tem pe rature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 180A
I
D
= 90A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Cas e
Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0 50 100 150 200 250 300 350
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 25
º
C
V
GS
= 10V
T
J
= 175
º
C
V
GS
= 15V
IXFK 180N15P
IXFX 180N15P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 180N15P
IXFX 180N15P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
is
C
os
C
rs
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 75V
I
D
= 90A
I
G
= 10mA
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G S
- Volts
I
D
- Amperes
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.30.50.70.91.11.31.5
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
Fig. 13. M axim um Trans ie nt The rm al Res is tance
0.00
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse W idth - milliseconds
R( t h ) J C - ºC / W
IXFK 180N15P
IXFX 180N15P
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
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