BC807-25W H6327 - Infineon Technologies

2007-06-08

1

BC807.../BC808...

PNP Silicon AF Transistor

• For general AF applications

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type:

BC817.../W, BC818.../W (NPN)

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BC807-16

BC807-16W

BC807-25

BC807-25W

BC807-40

BC807-40W

BC808-25

BC808-25W

BC808-40

BC808-40W

5As

5Bs

5Cs

5Fs

5Gs

1 = B

2 = E

3 = C

-

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

1Pb-containing package may be available upon special request

2007-06-08

2

BC807.../BC808...

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BC807...

BC808...

VCEO

45

25

V

Collector-base voltage

BC807...

BC808...

VCBO

50

30

Emitter-base voltage VEBO 5

Collector current IC500 mA

Peak collector current ICM 1000

Base current IB100

Peak base current IBM 200

Total power dissipation-

TS ≤ 79 °C BC807, BC808

TS ≤ 130 °C BC807W, BC808W

Ptot

330

250

mW

Junction temperature Tj150 °C

Storage temperature Tstg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1)

BC807, BC808

BC807W, BC808W

RthJS

≤ 215

≤ 80

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

2007-06-08

3

BC807.../BC808...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC807...

IC = 10 mA, IB = 0 , BC808...

V(BR)CEO

45

25

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC807...

IC = 10 µA, IE = 0 , BC808...

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0 V(BR)EBO 5 - -

Collector-base cutoff current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

50

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0 IEBO - - 100 nA

DC current gain1)

IC = 100 mA, VCE = 1 V, hFE-grp. 16

IC = 100 mA, VCE = 1 V, hFE-grp. 25

IC = 100 mA, VCE = 1 V, hFE grp. 40

IC = 500 mA, VCE = 1 V

hFE

100

160

250

40

160

250

350

-

250

400

630

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V

Base emitter saturation voltage1)

IC = 500 mA, IB = 50 mA VBEsat - - 1.2

1Pulse test: t < 300µs; D < 2%

2007-06-08

4

BC807.../BC808...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 200 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz Ccb - 8 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz Ceb - 60 -

2007-06-08

5

BC807.../BC808...

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp. 16

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

A

IC

1

10

2

10

3

10

hFE

105 °C

85 °C

65 °C

25 °C

-40 °C

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp. 25

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

A

IC

1

10

2

10

3

10

hFE

105 °C

85 °C

65 °C

25 °C

-40 °C

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp. 40

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

A

IC

1

10

2

10

3

10

hFE

105 °C

85 °C

65 °C

25 °C

-40 °C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0

10

EHP00215

CEsat

V

0.4 V 0.8

-1

100

101

3

10

5

Ι

CmA

5

2

10

0.2 0.6

-50

25

150

˚C

2007-06-08

6

BC807.../BC808...

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 10

0

10

EHP00214

BEsat

V

2.0 V 4.0

-1

10

0

10

1

3

10

5

Ι

C

mA

5

2

10

1.0 3.0

˚C

-50

25

˚C

150

Collector cutoff current ICBO = ƒ(TA)

VCBO = 25 V

0

10

EHP00213

A

T

150

0

5

10

Ι

CBO

nA

50 100

1

10

2

10

4

10

˚C

typ

max

10

3

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

10

EHP00210

03

10mA

1

10

3

10

5

10

1

10

2

10

2

C

T

fMHz

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0 2 4 6 8 10 12 14 16 V20

VCB/VEB

0

5

10

15

20

25

30

35

40

45

50

55

pF

65

CCB/CEB

CCB

CEB

2007-06-08

7

BC807.../BC808...

Total power dissipation Ptot = ƒ(TS)

BC807, BC808

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW

360

Ptot

Total power dissipation Ptot = ƒ(TS)

BC807W, BC808W

0 15 30 45 60 75 90 105 120 °C 150

TS

0

25

50

75

100

125

150

175

200

225

250

mW

300

Ptot

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

BC807, BC808

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stp

0

10

1

10

2

10

3

10

4

10

-

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Permissible Pulse Load RthJS = ƒ(tp)

BC807, BC808

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stp

-1

10

0

10

1

10

2

10

3

10

RthJS

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

2007-06-08

8

BC807.../BC808...

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

BC807W, BC808W

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stp

0

10

1

10

2

10

3

10

-

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Permissible Puls Load RthJS = ƒ (tp)

BC807W, BC808W

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s tp

-1

10

0

10

1

10

2

10

3

10

K/W

RtthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

2007-06-08

9

BC807.../BC808...

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25 MBC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2007-06-08

10

BC807.../BC808...

Package SOT323

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15

+0.1

-0.05

0.3

+0.1

±0.1

0.9

12

3A

±0.2

2

-0.05

0.650.65

M

3x 0.1

0.1 MIN.

0.1

M

0.2 A

0.2

4

2.15 1.1

8

2.3

Pin 1

2005, June

Date code (YM)

BCR108W

Type code

0.6

0.8

1.6

0.65 0.65

Manufacturer

2007-06-08

11

BC807.../BC808...

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.