© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ100 V
VGSM ±20 V
ID25 TC= 25°C75A
IDM TC= 25°C, pulse width limited by TJM 200 A
IAR TC= 25°C50A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
Maximum tab temperature for soldering 260 °C
TO-263 package for 10s
MdMounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-220 4 g
TO-263 3 g
G = Gate D = Drain
S = Source TAB = Drain
DS99158(03/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 µA 100 V
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 21 25 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
Advanced Technical Information
N-Channel Enhancement Mode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
TO-263 (IXTA)
TO-220 (IXTP)
G
DS(TAB)
D(TAB)
G
S
GS
(TAB)
IXTQ 75N10P
IXTA 75N10P
IXTP 75N10P
VDSS = 100 V
ID25 = 75 A
RDS(on) = 25 mΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 28 S
Ciss 2250 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 890 pF
Crss 275 pF
td(on) 27 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 53 ns
td(off) RG = 10 Ω (External) 66 ns
tf45 ns
Qg(on) 74 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 nC
Qgd 40 nC
RthJC 0.42 K/W
RthCK (TO-3P) 0.21 K/W
(TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. typ. Max.
ISVGS = 0 V 75 A
ISM Repetitive 200 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A 120 ns
-di/dt = 100 A/µs
QRM VR = 75 V 1.4 µC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 (IXTP) Outline
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
110
120
0123456789101112
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50-250 255075100125150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 75A
I
D
= 37.5A
V
GS
= 10V
Fig. 6. Drain Curre nt vs . Case
Tem perature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 20406080100120
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 50V
I
D
= 37.5A
I
G
= 10mA
Fig. 7. Input Admittance
0
15
30
45
60
75
90
105
120
567 891011
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
36
40
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.5 0.7 0.9 1.1 1.3 1.5 1.7
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2004 IXYS All rights reserved
Fig. 13. M axim um Trans ie nt The rm al Res is tance
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
1 10 100 1000
Pu ls e W id th - millis e c o n d s
R ( t h ) J C
- ºC / W
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
