IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W4EHB:M?:;8;IJ/ =L"a#?D1, W)EM;IJ<?=KH;E<C;H?J/,+N.Y V !08M\_Sj ..) O R =L"a#%_Sj )'*-) " -1 < Q Y%fkb W2BJH7BEM=7J;9>7H=; W"NJH;C;:L :JH7J;: W%?=>F;7A9KHH;DJ97F78?B?JO W-8 <H;;B;7:FB7J?D=/E%09ECFB?7DJ W.K7B!<?;: 799EH:?D=JE'"!" 1, #- )# CoolMOS CP is designed for: W%7H:7D:IE<JIM?J9>?D=0*-0<EHI;HL;HFEM;HIKFFB?;I W *-# <EH15 +EJ;8EEA7:7FJ;H -!-7D:) !13 W-4*IJ7=;I<EH0;HL;H :7FJ;H Type Package Marking BI9.)K*-)<I I@&MH++)?I .K*-)I Maximum ratings, 7JT \Z KDB;IIEJ>;HM?I;IF;9?<?;: Parameter EDJ?DKEKI:H7?D9KHH;DJ *# Value Symbol Conditions I= T <Z +, T < *. Z -KBI;::H7?D9KHH;DJ+# I =%bg^eW T <Z ./ L7B7D9>;;D;H=O I?D=B;FKBI; E 9L I = V == 3 /*/ L7B7D9>;;D;H=O H;F;J?J?L;t 9K+#%,# E 9K I = V == 3 )'2, L7B7D9>;9KHH;DJ H;F;J?J?L;t 9K+#%,# I 9K *,0#"1:v (Vt HK==;:D;II :v (Vt V =L $7J;IEKH9;LEBJ7=; V @L -EM;H:?II?F7J?ED P faf ,F;H7J?D=7D:IJEH7=;J;CF;H7JKH; T \ T efY *EKDJ?D=JEHGK; Rev. 2.2 Unit 9 _C 2', 9 .) O(e efSf[U w+) O <%P w,) T <Z ,- P v< 3 * I9H;MI Page 1 +9C 2018-02-14 IPA50R140CP Maximum ratings, 7JT \Z KDB;IIEJ>;HM?I;IF;9?<?;: Parameter EDJ?DKEKI:?E:;<EHM7H:9KHH;DJ *# Value Symbol Conditions IL Unit *- 9 T <Z !?E:;FKBI;9KHH;DJ+# I L%bg^eW ./ /;L;HI;:?E:;:v (Vt -# Vv (Vt *. O(e Parameter Symbol Conditions Values Unit min. typ. max. & & ,'/. Thermal characteristics 1>;HC7BH;I?IJ7D9; @KD9J?ED 97I; R fZC< 1>;HC7BH;I?IJ7D9; @KD9J?ED S_T[Wf R fZC9 ^WSVWV & & /+ 0EB:;H?D=J;CF;H7JKH; M7L;IEB:;H?D=EDBO7BBEM;:7JB;7:I T ea^V CC ?D <HEC97I;<EH I & & +/) v< O Electrical characteristics, 7JT \Z D(P KDB;IIEJ>;HM?I;IF;9?<?;: Static characteristics !H7?D IEKH9;8H;7A:EMDLEBJ7=; V ";K#=LL V @L 3 I = \ .)) & & $7J;J>H;I>EB:LEBJ7=; V @L"fZ# V =L6V @L I = C +'. , ,'. 6;HE=7J;LEBJ7=;:H7?D9KHH;DJ I =LL V =L 3 V @L 3 T \Z & & + V =L 3 V @L 3 T \ Z & +) & x9 $7J; IEKH9;B;7A7=;9KHH;DJ I @LL V @L 3 V =L 3 & & *)) 9 !H7?D IEKH9;ED IJ7J;H;I?IJ7D9; R =L"a# V @L 3 I = T \Z & )'*, )'*- " V @L 3 I = T \ Z & )',+ & $7J;H;I?IJ7D9; Rev. 2.2 R@ f *%P EF;D:H7?D Page 2 " 2018-02-14 IPA50R140CP Parameter Values Symbol Conditions Unit min. typ. max. & +.-) & & **) & & **) & Dynamic characteristics &DFKJ97F79?J7D9; C [ee ,KJFKJ97F79?J7D9; C aee "<<;9J?L;EKJFKJ97F79?J7D9; ;D;H=O C a"Wd# dW^SfWV.# V @L 3 V =L f *%P 3 b? V @L 3 V =L 3 JE 3 "<<;9J?L;EKJFKJ97F79?J7D9; J?C; dW^SfWV/# C a"fd# & +,) & 1KHD ED:;B7OJ?C; t V"a# & ,. & /?I;J?C; td & *- & 1KHD E<<:;B7OJ?C; t V"aXX# & 1) & #7BBJ?C; tX & 1') & $7J;JEIEKH9;9>7H=; Q Ye & ** & $7J;JE:H7?D9>7H=; Q YV & *. & $7J;9>7H=;JEJ7B QY & -1 /- $7J;FB7J;7KLEBJ7=; V b^SfWSg & .'+ & O & )'2 *'+ O & -)) & e & .'/ & x< & +/ & 9 V == 3 V @L 3 I = R @ " e $7J; >7H=; >7H79J;H?IJ?9I V == 3 I = V @L JE 3 < Reverse Diode !?E:;<EHM7H:LEBJ7=; V L= /;L;HI;H;9EL;HOJ?C; t dd /;L;HI;H;9EL;HO9>7H=; Q dd -;7AH;L;HI;H;9EL;HO9KHH;DJ I dd_ )# V @L 3 I ? T \Z V K 3 I ?6I L Vi ?(Vt \I ' 01! 7D:'"0! )?C?J;:EDBO8O1\%_Sj +# -KBI;M?:J>t bB?C?J;:8OT \%_Sj ,# /;F;J?J?L;7L7B7D9>;97KI;I7::?J?ED7BFEM;HBEII;IJ>7J97D8;97B9KB7J;:7IP 9O6E 9K$f. &L="B= :? :J" .# C a"fd#?I7<?N;:97F79?J7D9;J>7J=?L;IJ>;I7C;9>7H=?D=J?C;7IC aeeM>?B;V =L?IH?I?D=<HEC JE V =LL' /# C a"Wd#?I7<?N;:97F79?J7D9;J>7J=?L;IJ>;I7C;IJEH;:;D;H=O7IC aeeM>?B;V =L?IH?I?D=<HEC JE V =LL' 0# C a"fd#?I7<?N;:97F79?J7D9;J>7J=?L;IJ>;I7C;9>7H=?D=J?C;7IC aeeM>?B;V =L?IH?I?D=<HEC JE V =LL' Rev. 2.2 \I 3=<^[] 3 3bWS]5O";K#=LL 1\5M\_Sj ?:;DJ?97BBEM7D:>?=>I?:;IM?J9> Page 3 2018-02-14 IPA50R140CP 1 Power dissipation 2 Safe operating area P faf6X"T <# I =6X"V =LT <Z D 6) F7H7C;J;Ht b 102 35 \I 30 \I B?C?J;:8OED IJ7J; dWe[efSUW \I 25 20 CI I D [A] P tot [W] 10 1 CI 15 100 =< 10 5 10-1 0 0 50 100 100 150 101 102 103 V DS [V] T C [C] 3 Max. transient thermal impedance 4 Typ. output characteristics R"fZC<#6X"fb I =6X"V =LT \Z F7H7C;J;HD=t b(T F7H7C;J;HV @L 101 75 3 3 60 3 )'. 3 100 Z thJC [K/W] )'+ I D [A] 45 )'* 3 )'). 30 10-1 )')+ 3 )')* 15 3 I?D=B;FKBI; 10 3 -2 10-5 0 10-4 10-3 10-2 10-1 100 101 Rev. 2.2 0 5 10 15 20 V DS [V] t p [s] Page 4 2018-02-14 IPA50R140CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6X"V =LT \ Z R =L"a#6X"I =T \ Z F7H7C;J;HV @L F7H7C;J;HV @L 0.8 50 3 3 3 40 0.7 3 3 3 3 3 0.6 3 R DS(on) [ ] I D [A] 30 3 20 10 0.5 3 3 0.4 3 0.3 0.2 0 0 5 10 15 20 0 25 10 20 V DS [V] 30 40 50 60 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =L"a#6X"T \I =V @L 3 I =6X"V @LQV =Lm7+mI =mR =L"a#_Sj F7H7C;J;HT \ 0.35 90 0.3 75 0.25 60 I D [A] R DS(on) [ ] Z 0.2 fkb 0.15 30 0.1 15 0.05 0 -60 -30 0 30 60 90 120 150 180 T j [C] Rev. 2.2 Z 45 0 3 5 8 10 V GS [V] Page 5 2018-02-14 IPA50R140CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6X"Q YSfWI =FKBI;: I ?6X"V L=# F7H7C;J;HV == F7H7C;J;HT \ 102 10 Z 8 3 Z 10 3 1 Z Z I F [A] V GS [V] 6 4 100 2 10 0 0 10 20 30 40 -1 0 50 0.5 1 Q gate [nC] 1.5 11 Avalanche energy 12 Drain-source breakdown voltage E 9L6X"T \I = V == 3 V ;K"=LL#6X"T \I = C 580 700 560 600 540 V BR(DSS) [V] 500 E AS [mJ] 400 300 520 500 480 200 460 100 440 0 25 75 125 175 T j [C] Rev. 2.2 2 V SD [V] Page 6 -60 -20 20 60 100 140 180 T j [C] 2018-02-14 IPA50R140CP 13 Typ. capacitances 14 Typ. Coss stored energy C 6X"V =LV @L 3f *%P E aee= X(V =L) 105 12 10 104 <[ee 8 E oss [J] C [pF] 10 3 <aee 6 102 4 10 1 2 <dee 10 0 0 0 100 200 300 400 500 V DS [V] Rev. 2.2 0 100 200 300 400 500 V DS [V] Page 7 2018-02-14 IPA50R140CP Definition of diode switching characteristics Rev. 2.2 Page 8 2018-02-14 IPA50R140CP Outline PGTO220 FullPAK 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 oP Q Rev. 2.2 Page 9 MILLIMETERS MIN. MAX. 4.90 4.50 2.85 2.34 2.86 2.42 0.90 0.65 0.95 1.38 1.51 0.95 0.65 1.38 0.65 1.51 0.63 0.40 15.67 16.15 9.83 8.97 10.00 10.65 2.54 28.70 29.75 13.75 12.78 3.45 2.83 3.00 3.30 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 0 1 2 5:1 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 2018-02-14 500VCoolMOSCPPowerTransistor IPA50R140CP RevisionHistory IPA50R140CP Revision:2018-02-26,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2018-02-26 Outline PG-TO220 FullPAK update TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.2,2018-02-26