FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ aKK BM (Ta = 25C) " m #14 % |e MB : 2 Kk Ft ( 3 : Tn ie hn o Ie Pc Tj Touo Re KML |e RS Rape] OS 1 FOR 7 ; a ; 5 mn ) (mA) | (mW) (C) (uA fe fe re oe fab Cob Tob 7 BA) | Vcx(V) Vee(V)|I hip | hrt | hoo * ii 2sb476 | 8 PA SiT | 70 | 5 DW (W)FcGmA)|Vew(v) etm) aye* | CQ) [ox] Gro) iS hielreal)*| 4A (Te=asc)} 150 1 50 | 60~320 4 # (pF) Qa KB W477 1A] 4 | 500 * 3 1 268) E58, 47818 7|PA sit | 200] 6 | 2A | 20%.) 150 at lesan - (Te=25'C) 1 | 120 }60~320] 4 50 L At Si.E 40 5 4a |, 40W 22 268 | 258568 n 480 (re=ae| 150 | 500 | 40 | 6000 | 3 | 2A JEDEC 2N60 zat7h "|" " 6 | 5 | 4a | dow Boe eer | 952 | 285569 4 (re=2se| 150 | 500 | 60 | 6000 | 3 | 24 TEDEC 2NeOS a ba7 7) mt? so | s | 4a | AO% | 150 | 500 | 80 | 6000 Fo 252 277 = 6 3 2A JED: = 482[ 0 |n SLTP| 2 20W DEC 2N6039 48% 256571 rr 75 | 6 | 500 |20./ 150 | 10 | 275 | 80 | 10 | 100 wae bee 252 [28871 " 325 | 6 | 500 [20%] 150 | 10 | 325 | 80 | 10 | 100 SEDEC ENseoon* ee w 484) 8 We 2N5656 ysl 375 | 6 | 00 | 20%, 150 | 10 | 375 | 80 | 10 | 100 262 " Si.E 40 5 4A eo 150 100 0 50 3 TgA " 2N5657 252 486 " . 9 487 : 5 | 4a | 40%.) 150 | 100 | 60 | 50 2 | 1.54 252/ P22 " " IN. y 488 80 5 4A ewe) 150 | 100 | 80 | 50 2 | 1.5A ~ 252] Pav no\n " 30W . 4 2N5192 # 2SB577 7 aga hi 5 | 3a [22%] 150 | 100 | 4 [ so | 1 | 500 252| 498577 " 30W " 2N4921 2SB572 490 t 5 BA (reac) 150 100 60 50 1 500 - B2l ay ry yu Wy uv 491) 9 zo | 5 | 3A | 20%] 150 | 100 | 80 | so | a | 500 asian 282 ay ! i 4 492; on [wn y 100 7 15a | LIEW tho-5 MJE3055 1953 | 2SB575 7d (Teaasc)| 200 | ImA | 100 40 4 4A - beavTy 93] oo in 60 5 5A ow 150 100 0 0 JEDEC 2N3055 4 102) =5 2 | 2.54 vagal ow ty 7 n 4 n 495} 4 - * 5 5A reac) 150 | 100 80 40 2 | 2.54 ae 263 Pao # Hn : _ [100 | 5 | 5A [78% 150 | 100 | 100 | 40 | 2 | 2.5A BNE 253 [788500 a o : IN: so | 5 | 8A [25% 150 | 500 | so | 3000] 4 | 4A eins 2 5979 253 [SBS nao7] on | a0 | 5 | 8A [ow ~ a aes a 253 | 3852, (row) 150 | 500 | 80 | 3000| 4 | 4A = em gay7) 498 u " 0-5 MJE3044 78S T 4 100 5 ga | 75W - wale kok 253 | 298583 - (Te=2s'c)| 150 500 100 | 3000 - 2 FRE [ear7) y 499; oo |H 4 | 44 MIES0451 60 5 ga | 90W - _ _ PHS kok 953 | 258584 ; (ogc, 150 | 100 | 60 | 60 2 | 4A - i. barr 500 | 80 5 BA owe 150 100 30 60 JEDEC 2N598348 44 253 =35C) 2 | 4A i" 501 | 5 | 7 " 100 | 5 | 8A |.,2W.) 150 | 100 | 100 | 6 | 2 | 4A ~ fen aN5884 253 502 } 7 60 5 | 8A [2008 200 | 500 | 60 | 3000 | 3 4A r 2N5985 7 253 503) wv an : menep 4 JEDEC 2N6055#H 2 535 | | a0 | 5 | ea [200M 290 | soo | 80 | 3000) 3 | 4A = Ze bet 102 | Ey c= 4 . zw?) n 504) ou | a #0 } 8) 12a | 130W JEDEC 2N6056 48 102 | 283586 7 (Te=25'C) 200 500 60 3000 3 6A JEDEC aN kav 7) 505 80 5 12A 150W yys 6057 3a 102 | 253587 (rezwscy| 200 | 500 | 80 | 3000) 3 6A = 180. kay7i) i JEDEC 2N605848 24 28B. FO by ee | 102 | 258588,