http://www.epsontoyocom.co.jp
Crystal oscillator
Crystal oscillatorCrystal oscillator
Crystal oscillator
Eps
EpsEps
Epson Toyocom
on Toyocomon Toyocom
on Toyocom
Actual size
S
p
ecifications
(
characteristics
)
Specifications *2
Item Symbol PT
/
ST PH
/
SH PC
/
SC Remarks
1 MHz to 125 MHz
-
V
CC
=4.5 V to 5.5 V
-
1 MHz to125 MHz V
CC
=3.0 V to 3.6 V
Output frequency range
f
0
-
1 MHz to 66.7 MHz V
CC
=2.7 V to 3.6 V
Supply voltage V
CC
4.5 V to 5.5 V 2.7 V to 3.6 V
Storage
temperature T_stg -40 °C to +125 °C Store as bare product after unpacking
Temperature
range Operating
temperature T_use -20 °C to +70 °C (-40 °C to +85 °C) -40 °C to +85 °C Refer to “Outline specifications” (Frequency range)
B: ±50 × 10
-6
,C: ±100 × 10
-6
-20 °C to +70 °C
Frequency tolerance f_tol M: ±100 × 10
-6
-40 °C to +85 °C *3
Current consumption I
CC
40 mA Max. 28 mA Max. No load condition, Max. frequency
Disable current I_dis 30 mA Max. 16 mA Max. OE=GND
Standby current I_std 50 µA Max.
ST
=GND(ST,SH,SC)
-
40 % to 60 % CMOS load:50 % V
CC
level, Max. load condition
Symmetry *1 SYM
40 % to 60 %
-
TTL load: 1.4 V, Max. load condition
High output voltage V
OH
V
CC
-0.4 V Min. I
OH
=-16 mA(PT,ST,PH,SH),-8 mA(PC,SC)
Low output voltage V
OL
0.4 V Max. I
OL
=16 mA(PT,ST,PH,SH), 8 mA(PC,SC)
Output load condition
(TTL) *1 L_TTL 5 TTL Max.
-
Output load condition
(CMOS) *1 L_CMOS 15 pF Max.
Max. frequency and
Max. Supply voltage
V
IH
2.0 V Min. 70 % V
CC
Min. Output enable /
disable input voltage V
IL
0.8 V Max. 20 % V
CC
Ma x.
ST
terminal or OE terminal
-
3 ns Max. CMOS load: 20 % V
CC
to 80 % V
CC
level
Rise and Fall time *1
t
r
/
t
f
4 ns Max.
-
TTL load: 0.4 V to 2.4 V level
Start-up time t_str 10 ms Max. Time at minimum supply voltage to be 0 s
Frequency aging f_aging ±5 × 10
-6
/ year Max. +25 °C, V
CC
=5.0 V/ 3.3 V (PC,SC) First year
*1
Operating temperature (-40 °C to +85 °C), the available frequency, symmetry and output load conditions, please refer to “Outline specifications” page.
*2 PLL-PLL connection & Jitter specification, please refer to “Jitter specifications and characteristics chart” page.
*3 PT
/
ST and PH
/
SH for “M” tolerance will be available up to 27 MHz. Checking possible by the Frequency checking program.
External dimensions
(
Unit:mm
)
Foot
p
rint
(
Recommended
)
(
Unit:mm
)
.
CRYSTAL OSCILLATOR
PROGRAMMABLE
SG
-
8002CE
series
•Frequency range : 1 MHz to 125 MHz
•Supply voltage : 3.3 V / 5.0 V
•Functio n : Output enable(OE) or Standby(
ST
)
•External dimensions : 3.2 × 2.5 × 1.05 t (mm) Typ.
•Short mass production lead time by PLL technology.
•SG-Writer available to purchase.
Please contact Epson Toyocom or local sales representative.
Note.
OE Pin (PT, PH, PC)
OE pin = "H" or "open" : Specified frequency output.
OE pin = "L" : Output is high impedance.
ST
pin (ST, SH, SC)
ST
pin - "H" or "open" : Specified frequency output.
ST
pin - "L" : Output is low level (weak pull - down), oscillation stops.
E125.0C
SC181A
2.5 ±0.2
#1 #2
#4 #3
1.05 ±0.15
2.2
#2
#3
0.9
0.9
#1
#4
0.7
Pin map
Pin Connection
1 OE or
ST
2 GND
3 OUT
4 V
CC
3.2 ±0.2
Product Number (please contact us)
Q3321CExxxxxx00
To maintain stable operation, provide b
y
-pass capa citor
with more than 0.1
µ
F at a location as near as possible to
the power source terminal of the crystal products
(between V
CC
- GND).
1.4
2.4
1.9
1.2
#1
#2
#3
#4
C
(
ex.0.01
µ
F
)
Resis
t
http://www.epsontoyocom.co.jp
Crystal oscillator
Crystal oscillatorCrystal oscillator
Crystal oscillator
Epson Toyocom
Epson ToyocomEpson Toyocom
Epson Toyocom
SG-8002 Series_ Outline of specifications
Item
Model
Current
Consump
tion
Supply
Vo l t ag e
Output load condition Output rise time
Output fall time Symme try
Functi on
PH OE
SH
30 mA
Ma x. 4.5 V to 5.5 V
15 pF 3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.) 40 % to 60 %(50 % V
CC
, L_CMOS=15 pF,
f
0
≤80 MHz/-40 °C to+85 °C)
ST
PC OE
SG-8002LB
(SOJ 4-pin)
SC
28 mA
Ma x.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
15 pF
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40 MHz)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125 MHz)
↑ (50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7 MHz)
ST
PT OE
ST
5 TTL+15 pF (
f
0
≤125 MHz/-20 °C to+70 °C)
25 pF (
f
0
≤66.7 MHz/-20 °C to+70 °C)
5 TTL+15 pF (
f
0
≤40 MHz/-40 °C to +85 °C)
15 pF(
f
0
≤55 MHz/-40 °C to +85 °C)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤40.0 MHz/-40 °C to +85 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_CMOS=15 pF,
f
0
≤55.0 MHz/-40 °C to +85 °C)
ST
PH OE
SH
45 mA
Ma x. 4.5 V to 5.5 V
25 pF (
f
0
≤125 MHz/-20 °C to+70 °C)
50 pF (
f
0
≤66.7 MHz/-20 °C to+70 °C)
15 pF (
f
0
≤55 MHz/-40 °C to+85 °C)
25 pF (
f
0
≤40 MHz/-40 °C to+85 °C)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (50 % V
CC
, L_MOS=25 pF,
f
0
≤40.0 MHz/-40 °C to +85 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
↑ (50 % V
CC
, L_CMOS=50 pF,
f
0
≤66.7 MHz/-20 °C to+70 °C)
↑ (50 % V
CC
, L_CMOS=15 pF,
f
0
≤55.0 MHz/-40 °C to +85 °C)
ST
PC OE
SG-8002CA
(SON)
SG-8002JA
(SOJ 4-pin)
SG-8002DB
(DIP 14-pin)
SG-8002DC
(DIP 8-pin)
SC
28 mA
Ma x.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
15 pF (
f
0
≤66.7 MHz/2.7 to 3.6 V)
15 pF (
f
0
≤125 MHz/3.0 to 3.6 V)
30 pF (
f
0
≤40 MHz/3.0 to 3.6 V)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40 MHz)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125 MHz)
↑ (50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7 MHz)
ST
PT OE
ST
5TTL + 15 pF (
f
0
≤90 MHz/-20 to+70 °C)
15 pF (
f
0
≤125 MHz/-20 °C to +70 °C)
25 pF (
f
0
≤66.7 MHz/-20 °C to+70 °C)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,
f
0
≤66.7 MHz/-20 °C to+70 °C)
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,
f
0
≤90.0 MHz/-20 °C to+70 °C)
↑ (1.4 V,L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (1.4 V,L_CMOS=15 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
ST
PH OE
SH
45 mA
Ma x. 4.5 V to 5.5 V
15 pF (
f
0
≤125 MHz/-20 °C to+70 °C)
25 pF (
f
0
≤90 MHz/-20 °C to+70 °C)
50 pF (
f
0
≤66.7 MHz/-20 °C to+70 °C)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
,
L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
↑ (50 % V
CC
, L_CMOS=25 pF,
f
0
≤90 MHz/-20 °C to +70 °C)
↑ (50 % V
CC
, L_CMOS=50 pF,
f
0
≤50 MHz/-20 °C to +70 °C)
ST
PC OE
SG-8002JC
(SOJ 4-pin)
SC
28 mA
Ma x.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
15 pF (
f
0
≤66.7 MHz/2.7 to 3.6 V)
15 pF (
f
0
≤125 MHz/3.0 to 3.6 V)
30 pF (
f
0
≤40 MHz/3.0 to3.6 V)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15 )
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40 MHz)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125 MHz)
↑ (50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7 MHz)
ST
PT OE
ST
15 pF (
f
0
≤125 MHz/-20 °C to +70 °C )
25 pF (
f
0
≤66.7 MHz/-20 °C to+70 °C)
5TTL + 15 pF (
f
0
≤ 90 MHz/-20 °C to +70 °C)
15 pF (
f
0
≤40 MHz/-40 °C to +85 °C)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS≤25)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7 MHz/-20 °C to+70 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤90 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_CMOS=15 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_CMOS=15 pF,
f
0
≤40 MHz/-40 °C to +85 °C)
ST
PH OE
SH
45 mA
Ma x.
4.5 V to 5.5 V
15 pF (
f
0
≤125 MHz/-20 °C to+70 °C )
25 pF (
f
0
≤90 MHz/-20 °C to+70 °C)
50 pF (
f
0
≤50 MHz/-20 °C to+70 °C)
15 pF (
f
0
≤40 MHz/-40 °C to+85 °C)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤90.0 MHz/-20 °C to +70 °C)
↑ (50 % V
CC
, L_CMOS=50 pF,
f
0
≤50.0 MHz/-20 °C to+70 °C)
↑ (50 % V
CC
, L_CMOS=15 pF,
f
0
≤125 MHz/-20 °C to+70 °C)
↑ (50 % V
CC
, L_CMOS=15 pF,
f
0
≤40 MHz/-40 °C to+85 °C)
ST
PC OE
SG-8002JF
(SOJ 4-pin)
SC
28 mA
Ma x.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
15 pF(
f
0
≤66.7 MHz/2.7 to 3.6 V)
15 pF(
f
0
≤125 MHz/3.0 to 3.6 V)
30 pF(
f
0
≤40 MHz/3.0 to 3.6 V)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, CL=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40 MHz)
40 % to 60 %(50 % V
CC
, CL=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125 MHz)
↑ (50 % V
CC
, CL=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7 MHz)
ST
PT OE
ST
5 TTL+15 pF (
f
0
≤125 MHz/-20 °C to + 70 °C)
5 TTL+15 pF (
f
0
≤27 MHz/-40 °C to +85 °C )
2.0 ns Max.
(0.8 V to 2.0 V,L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_TTL=Max.)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤27.0 MHz/-40 °C to + 85 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
ST
PH OE
SH
40 mA
Ma x. 4.5 V to 5.5 V
15 pF (
f
0
≤125 MHz/-20 °C to +70 °C )
25 pF (
f
0
≤100 MHz/-20 °C to+70 °C )
25 pF (
f
0
≤27 MHz/-40 °C to +85 °C )
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤66.7 MHz/-20 °C to +70 °C)
↑ (50 % V
CC
, L_CMOS=25 pF,
f
0
≤27.0 MHz/-40 °C to + 85 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF,
f
0
≤125 MHz/-20 °C to +70 °C)
ST
PC OE
SG-8002CE
(SON)
SC
28 mA
Ma x.
3.0 V to 3.6 V
(2.7 V to 3.6 V)
15 pF (
f
0
≤66.7 MHz/2.7 to 3.6 V)
15 pF (
f
0
≤125 MHz/3.0 to 3.6 V)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40 MHz)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125 MHz)
↑ (50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7 MHz)
ST
►
TABLE OF FREQUENCY RANGE
Model Supply voltage
Frequency tolerance
OperatingTemperature
Frequency
1 MHz 50 MHz 100 MHz 125 MHz
B,C 1.0 MHz 125 MH z PT/ ST
PH/ SH 4.5 V to 5.5 V M 1.0 MHz 27 MHz
SG-8002CE
PC/SC 3.0 V to 3.6 V
(2.7 V to 3.6 V) B,C,M 1.0 MHz 125 MHz
*2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz
B,C 1.0 MHz 80 MHz
PH/ SH 5.0 V±0.5 V M,L 1.0 MHz 27 MHz
SG-8002LB
PC/ SC 3.3 V±0.3 V B,C,M,L 1.0 MHz 125 MHz
*2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz
B,C 1.0 MHz 125 MH z PT/ ST
PH/ SH 4.5 V to 5.5 V M 1.0 MHz 40 MHz
SG-8002JF PC
SC
3.0 V to 3.6 V
(2.7 V to 3.6 V) B,C,M 1.0 MHz 125 MHz
*2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz
B,C 1.0 MHz 125 MH z PT/ ST
PH/ SH 4.5 V to 5.5 V M 1.0 MHz 55 MHz
SG-8002CA
SG-8002JA
SG-8002DB
SG-8002DC PC/ SC 3.0 V to 3.6 V
(2.7 V to 3.6 V) B,C,M 1.0 MHz 125 MHz
*2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz
PT/ ST
PH/ SH 4.5 V to 5.5 V B
C
1.0 MHz 125 MHz
SG-8002JC
PC/ SC 3.0 V to 3.6 V
(2.7 V to 3.6 V)
B
C
1.0 MHz 125 MHz
*2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz
Frequency tolerance : B:±50×10
-6
(-20 °C to +70 °C ), C:±100×10
-6
(-20 °C to +70 °C ), M:±100×10
-6
(-40 °C to +85 °C ), L:±50×10
-6
(-40 °C to +85 °C )
http://www.epsontoyocom.co.jp
Crystal oscillator
Crystal oscillatorCrystal oscillator
Crystal oscillator
Epson Toyocom
Epson ToyocomEpson Toyocom
Epson Toyocom
SG / HG-8002 series_
Jitter specifications and characteristics chart
■
PLL-PLL connection
Because we use a PLL technology, there are a few cases that the jitter value will increase when SG-8002 is connected to another
PLL-oscillator.
In our experience, we are unable to recommend these products for the applications such as telecom carrier use or analog video
clock use. Please be careful checking in advance for these application (Jitter specification is Max.250 ps/CL=15 pF)
Jitter Specifications
Model Supply
Voltage Jitter Item Specifications Remarks
150 ps Max. 33 MHz ≤
f
0
≤ 125 MHz, L_CMOS=15 pF
Cycle to cycle 200 ps Max. 1.0 MHz ≤
f
0
< 33 MHz, L_CMOS=15 pF
200 ps Max. 33 MHz ≤
f
0
≤ 125 MHz, L_CMOS=15 pF
PT / PH
ST / SH 5.0 V ±0.5 V
Peak to peak 250 ps Max. 1.0 MHz ≤
f
0
< 33 MHz, L_CMOS=15 pF
Cycle to cycle 200 ps Max. 1.0 MHz ≤
f
0
≤ 125 MHz, L_CMOS=15 pF
SC / PC 3.3 V ±0.3 V Peak to peak 250 ps Max. 1.0 MHz ≤
f
0
≤ 125 MHz, L_CMOS=15 pF
■
Remarks on noise management for power supply line
We do not recommend inserting filters or other devices in the power supply line as the counter measure of EMI noise reduction.
This device insertion might cause high-frequency impedance high in the power supply line and it affects oscillator stable drive.
When this measure is required, please evaluate circuitry and device behavior in the circuit and verify that it will not affect oscillation.
Start up time (0 % V
CC
to 90 % V
CC
) of power source should be more than 150 µs.
■
SG-8002 series Characteristics chart
V
CC
=5.0 V
25 pF
Frequency(MHz)
0
Current consumption
(V
CC
=5.0 V)
20 40 60 80 100 120 140
10
20
30
40
50
I
CC
(mA)
Frequency(MHz)
0
Disable Current
(V
CC
=5.0V)
20 40 60 80 100 120 140
10
20
30
40
50
I
_dis
(mA)
V
CC
(V)
I
_std
(µA)
2.5
Stand-by Current
3.0 3.5 4.0 4.5 5.0 5.5 6.0
10
20
30
40
50
Frequency(MHz)
0
Symmetry 5.0V TTL Level
20 40 60 80 100 120 140
40
45
50
55
60
Symmetry (%)
0
Symmetry 3.3 V CMOS Level
20 40 60 80 100 120 140
40
45
50
55
60
Frequency(MHz)
Symmetry (%)
0
Symmetry 5.0 V CMOS Level
20 40 60 80 100 120 140
40
45
50
55
60
Frequency(MHz)
Symmetry (%)
0
Frequency(MHz)
Output load vs. Additional Current consum ption
20 40 60 80 100 120 140
2
4
6
8
10
12
14
16
18
20
2.5
V
CC
(V)
Voltage coefficient [
V
CC
vs I_di s,I_std ]
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.2
0.4
0.6
Times
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Rise time (ns)
10
Output Rise time (CMOS Level)
15 20 25 30 35 40 45
1.0
1.5
2.0
3.0
2.5
Load capacitance (pF)
50 55
Output Fall time (CMOS Level)
3.0
10 15 20 25 30 35 40 45
1.0
1.5
2.0
2.5
Load capacitance (pF)
Fall Time
(
ns
)
50 55
10
Output Fall time (TTL Level)
15 20 25 30
1.0
1.5
2.0
Load capacitance (pF)
Fall Time (ns)
Out
p
ut Rise time
(
TTL Level
)
10 15 20 25 30
1.0
1.5
2.0
Load capacitance (pF)
Rise Time (ns)
15 pF
50 pF
15 pF
30 pF
25 pF
15 pF
I_dis(Va)=Times(Va)×I_dis(5.0V)
I_std(Va)=Times(Va)×I_std(5.0V)
25 pF
15 pF
50 pF
30 pF
5.0 V
5.5 V
4.5 V
3.3 V
3.6 V
3.0 V
3.3 V
3.6 V
3.0 V 5.0 V
5.5 V
4.5 V
5.0 V
5.5 V
4.5 V
5.0 V
5.5 V
4.5
V
2.7 V
2.7 V
25 pF
A
dditional Value (mA)
“QMEMS” EPSON TOYOCOM
In order to meet customer needs in a rapidly advancing digital,
broadband and ubiquitous society, we are committed to offering products
that are one step ahead of the market and a rank above the rest in quality.
To achieve our goals, we follow a “3D (three device) strategy” designed to
drive both horizontal and vertical growth. We will to grow our three device
categories of “Timing Devices”, ”Sensing Devices” and “Optical Devices”,
and expand vertical growth through a combination of products from these
categories.
A Quartz MEMS is any high added value quartz device that exploits the
characteristics of quartz crystal material but that is produced using MEMS
(micro-electro-mechanical system) processing technolog y.
Market needs are advancing faster than previously imagined toward
smaller, more stable crystal products, but we will stay ahead of the curve
by rolling out products that exceed market speed and quality
requirements. We want to further accelerate the 3D strateg y by QMEMS.
Quartz devices have become crucial in the network environment where
products are increasingly intended for broadband, ubiquitous applications
and where various types of terminals can transfer information almost
immediately via LAN and WAN on a global scale. Epson Toyocom
Corporation addresses every single aspect within a network environment.
The new corporation offers “Digital Convergence” solutions to problems
arising with products for consumer use, such as, core network systems
and automoti ve syste ms.
PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM
CONFORMING TO INTERNATIONAL STANDARDS
At Epson Toyocom, all environmental initiatives operate under
the Plan-Do-Check-Action(PDCA) cycle designed to achieve
continuous improvements. The environmental management
system (EMS) operates under the ISO 14001 environmental
management standard.
All of our major manufacturing and non-manufacturing sites,in Japan and overseas, completed the acquisition of ISO 14001 certification.
WORKING FOR HIGH QUALITY
In order provide high quality and reliable products and services than meet customer needs,
Epson Toyocom made early efforts towards obtaining ISO9000 series certification and has acquired ISO9001 for all business establishme nts i n Japa n
and abroad. We have also acquired ISO/TS 16949 certification that is requested strongly by major automotive manufacturers as standard.
►Explanation of the mark that are using it for the catalog
►Pb free.
►Complies with EU RoHS directive.
*About the products without the Pb-free mark.
Contains Pb in products exempted by EU RoHS directive.
(Contains Pb in se aling glass, high me lting te mperature type solder or othe r.)
►The products have been designed for high reliability applications such as Automotive.
Notice
●This material is subject to c hange without notice.
●Any part of this material may not be reproduced or duplicated in any form or any means without the written permission of Epson To y o c o m .
●The information, applied circuitry, programming, usage, etc., written in this material is intended for reference only. Epson Toyocom does not
assume any liability for the occurrence of infringing on any patent or copyright of a third party. This material does not authorize the licensing for
any patent or intellectual copyrights.
●Any product described in this material may contain technology or the subject relating to strategic products under the control of the Foreign
Exchange and Foreign Trade Law of Japan and may require an export license from the Ministry of International Trade and Industry or other
approval from another government agency.
●You are requested not to use the products (and any technical information furnished, if any) for the development and/or manufacture of weapon
of mass destruction or for other military purposes. You are also requested that you would not make the products available to any third party
who may use the products for such prohibited purposes.
●These products are intended for general use in electronic equipment. When using them in specific applications that require extremely high
reliability, such as the applications stated below, you must obtain permission from Epson Toyocom in advance.
/ Space equipment (artificial satellites, rockets, etc.) / Transportation vehicles and related (automobiles, aircraft, trains, vessels, etc.)
/ Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work equipment and security equipment
/ traffic control equipment / and others requiring equivalent reliability.
● In this new crystal master for Epson Toyocom, product codes and markings will remain as previously identified prior to the merger.
Due to the on-going strategy of gradual unification of part numbers, please review product codes and markings, as they will change during the
course of the coming months.
We apologize for the inconvenience, but we will eventually have a unified part numbering system for Epson Toyocom that will be user friendly.
QS-9000 is an enhanced standard for quality assurance systems
formulated by leading U.S. automobile manufacturers based on the
international ISO 9000 series.
ISO 14000 is an international standard for environmental management
that was established by the International Standards Organization in 1996
against the background of growing concern regarding global warming,
destruction of the ozone layer and global
deforestation
ISO/TS 16949 is a global standard based on QS-9000, a severe standard
corresponding to the requirements from the automobile industry.
