®
EGP10A........ EGP10J
1 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier
• Glass Passivated Junction
• High current capability
• The plastic material carries
U/L recognition 94 V-0
• Terminals: Axial Leads
• Polarity: Color band denotes cathode
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
Dimensions in mm. DO-41
(Plastic)
EGP10A
50
Maximum Ratings, according to IEC publication No. 134
Peak Recurrent reverse voltage (V)
Maximum RMS voltage
Maximum DC blocking voltage
Forward current at Tamb = 55 °C
Recurrent peak forward current
8.3 ms. peak forward surge current
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
1 A
10 A
30 A
T
j
T
stg
Operating temperature range
Storage temperature range
– 65 to + 150 °C
– 65 to + 150 °C
Electrical Characteristics at Tamb = 25 °C
V
F
Max. forward voltage drop at I
F
= 1 A
I
R
5 µ A
50 µ A
1.25 V
Max. reverse current at V
RRM
t
rr
Max. reverse recovery time from 50 ns
EGP10B
100
EGP10D
200
EGP10F
300
EGP10G
400
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
R
thj-a
Max. thermal resistance ( l = 10 mm.) 60 °C/W
Voltage
50 to 600 V.
Current
1 A at 55 ºC.
at 25 ºC
at 150 ºC
35
50
70
100
140
200
210
300
280
400
(Jedec Method)
C
j
Typical Junction Capacitance at 1 MHz
and reverse voltaje of 4V
DC
15 pF
E
RSM
Maximum non repetitive peak
reverse avalanche energy.
I
R
= 0.5A ; T
J
= 25 ºC
20 mJ
EGP10J
600
420
600
0.95 V
58.5 ± 0.5
5 +0.2
- 0
EGP10
Rating And Characteristic Curves
FORWARD CURRENT DERATING CURVE TYPICAL FORWARD CHARACTERISTIC
Tamb, ambient temperature (ºC) V , instantaneous forward voltage (V)
F
10 mm. - 10 mm.
0 50 175
0
25 75 150125100
T = 25 ºC
j
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
10
0
1
Number of cycles at 60 Hz.
0.2
0.4
0.6
0.8
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10 2
1
10
-1
10
-2
10
2 4 6 10 100604020
TYPICAL JUNCTION CAPACITANCE
0.1 0.5 1 5 10 50 100
0
10
20
30
1
20
30
40
50
2
60
50
40
70
V , reverse voltage (V)
R
T = 25ºC
j
f = 1 MHz
EGP10A thru
EGP10D
EGP10F thru
EGP10J
