Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -7.8
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -6.2 A
IDM Pulsed Drain Current -39
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 16 mW /° C
VGS Gate-to-Source Voltage ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
10/4/04
www.irf.com 1
IRF7325PbF
HEXFET® Power MOSFET
PD- 95721
Absolute Maximum Ratings
W
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
VDSS RDS(on) max (mW) ID
-12V 24@VGS = -4.5V ±7.8A
33@VGS = -2.5V ±6.2A
49@VGS = -1.8V ±3.9A
SO-8
D
1
D
1
D
2
D
2
G
1
S
2
G
2
S1
Top View
8
1
2
3
45
6
7
Description
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
New P-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique s.
IRF7325PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
-39
-2.0 A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 24 VGS = -4.5V, ID = -7.8A
––– 33 VGS = -2.5V, ID = -6.2A
––– 49 VGS = -1.8V, ID = -3.9A
VGS(th) Gate Threshold Voltage -0.40 ––– -0.90 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 17 ––– ––– S VDS = -10V, ID = -7.8A
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– – –– 1 00 VGS = 8.0V
QgTotal Gate Charge –– – 22 33 ID = -7.8A
Qgs Gate-to-Source Charge ––– 5.0 7.5 nC VDS = -6.0V
Qgd Gate-to-Drain ("Miller") Charge ––– 4.7 7.0 VGS = -4.5V
td(on) Turn-On Delay Time ––– 9.4 ––– VDD = -6.0V
trRise Time ––– 9.8 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 240 ––– RD = 6.0Ω
tfFall Time ––– 180 ––– VGS = -4.5V
Ciss Input Capacitance ––– 2020 ––– VGS = 0V
Coss Output Capacitance ––– 520 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 3 30 – –– ƒ = 1.0MHz
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
When mounted on 1 inch square copper board.
IRF7325PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-7.8A
0.1
1
10
100
0.1 1 10
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
0.1
1
10
100
0.1 1 1
0
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
0.1
1
10
100
1.0 1.5 2.0 2.5 3.
0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF7325PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
010 20 30 40 50
0
2
4
6
8
10
Q , To tal Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-7.8A
V =-6V
DS
V =-9.6V
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
110 100
-VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7325PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ectangula r Pulse Dura t ion (s ec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRF7325PbF
6www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
V
G
Charge
D.U.T. VD
S
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0.0 2.0 4.0 6.0 8.0 10.0
-VGS, Gate -to -Sour ce Voltage (V)
0.01
0.02
0.03
0.04
0.05
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -7.8A
2.0 4.0 6.0 8.0 10.0
-ID , Drain C urrent (A)
0
0.02
0.04
0.06
0.08
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.5V
VGS = -1.8V
VGS = -4.5V
IRF7325PbF
www.irf.com 7
Fig 15. Typical Vgs(th) Vs.
Junction Temperature Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Tem perature ( °C )
0.4
0.6
0.8
1.0
-VGS(th) Gate threshold Voltage (V)
ID = -250µA
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
20
40
60
80
100
Power (W)
IRF7325PbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CO NTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YW W)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DE S IGNAT E S L EAD-F REE
PRODUCT (OPTIONAL)
A = ASSE MBL Y SITE CODE
IRF7325PbF
www.irf.com 9
330.0 0
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSI O N : MIL LIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEE D DI RECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLI METERS(IN CHES ).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
