© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M 500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 100 A
IDM TC= 25C, Pulse Width Limited by TJM 250 A
IATC= 25C 100 A
EAS TC= 25C5J
dv/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns
PDTC= 25C 1890 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force 30..120/6.7..27 N/lb
Weight 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • IDSS, Note 1 49 m
IXFB100N50P VDSS = 500V
ID25 = 100A
RDS(on)
49m
trr
200ns
DS99496F(2/15)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Features
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
PolarTM HiPerFETTM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
PLUS264TM
Tab
S
G
D
IXFB100N50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 50A, Note 1 50 80 S
Ciss 20 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1700 pF
Crss 140 pF
td(on) 36 ns
tr 29 ns
td(off) 110 ns
tf 26 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 96 nC
Qgd 78 nC
RthJC 0.066C/W
RthCS 0.13 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 100 A
ISM Repetitive, Pulse Width Limited by TJM 250 A
VSD IF = 100A, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 0.6 C
IRM 6.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 1 (External)
IF = 25A, -di/dt = 100A/s
VR = 100V, VGS = 0V
PLUS264TM (IXFB) Outline
© 2015 IXYS CORPORATION, All Rights Reserved
IXFB100N50P
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
012345
VDS - Volts
ID - Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
0 5 10 15 20 25
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
0246810
VDS - Volts
ID - Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 50A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Cen ti grade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 100A
I
D
= 50A
Fig. 5. R
DS(on)
No rmalized to I
D
= 50A Value vs.
Drain Current
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 40 80 120 160 200
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Curre nt vs.
Case Temperature
0
20
40
60
80
100
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigra de
I
D
- Amperes
IXFB100N50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 50A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capaci tance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Sin gl e Pul se
1ms
100µs
R
DS(on)
Limit
10ms
DC
25µs
© 2015 IXYS CORPORATION, All Rights Reserved
Fig. 14. Cauer Thermal Network
IXYS REF: F_100N50P(9S) 2-08-06-A
IXFB100N50P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
0.0001 0.001 0.01 0.1 1 10
Pulse Wi dth - Seconds
Z
(th)JC
- ºC / W
i Ri (CW)  Ci (J/C)
1 0.0011707 0.0031990
2 0.0252980 0.0449880
3 0.0280620 0.7284100
4 0.0091690
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