DMV56/F5 - STMicroelectronics

DMV series

August 1999 - Ed: 2A

DAMPER + MODULATION DIODE FOR VIDEO

Symbol Parameter Value Unit

MODUL DAMPER

VRRM Repetitive peak rev erse voltage 600 1500 V

IFSM Surge non repetitive forwar d c urrent tp = 10 m s

sinusoidal DMV16 50 50 A

DMV32 60 75

DMV56 60 80

Tstg Storage temperatur e r ange - 40 to + 150 ° C

TjMaximum operating junction temperature 150

TURB OSWITCH is a trademark of STMicroelectroni cs

ABSOLUTE RATINGS ( lim iting values, per diode)

Insulated TO-220AB

(Bending option F5 available)

FULL KIT IN ONE PACKAGE

HIGH BREAKDOWN VOLTAGE CAPABILIT Y

VERY F A ST RE CO VERY DIODE

SPECIFIED TURN O N SWITCHING

CHARACTERISTICS

LOW STATIC A ND PEAK FORWARD

VO LT AG E DRO P FOR LOW DISSIP ATION

INSULATED VERS ION:

Insulated voltage = 2500 V RMS

Capacitance = 7 pF

PLANAR TECHNO LOGY ALLOW ING HIGH

QUALITY AND BEST ELECTRICAL

CHARACTERISTICS

OUTSTANDING PER FORMA NCE OF WELL

PROVEN DTV AS DAMPER AND

TURBOSWITCHTM A S M O DULA TION

FEAT URES AND BENE FITS

High voltage semiconductor especially designed

for horizontal deflection stage in standard and high

resolution video display with E/W cor rection.

The insulated TO-220AB package includes both

the DAMPER diode and the M ODULATION diode.

Assembled on automated line, it offers excellent

insulating and dissipating characteristics, thanks to

the internal ceram ic insulat ion layer.

DESCRIPTION

MODUL DAMPER

IF(AV) 3 A & 6 A 5 A & 6 A

VRRM 600 V 1500 V

trr 50 ns 135 n s

VF (max) 1.5 V 1.35 V

MAIN PRODUCT CHARACTERISTI CS

123

DAMPER MODULATION

123

1/9

Symbol Parameter Value Unit

DMV16 DMV32 DMV56

Rth(j-c) Dam per junction to cas e 5.3 4.8 3.6 °C/W

Rth(j-c) M odulation junction to case 6.5 5.3 5.3

Rth(c) Coupling 0.2 0.2 0.2

Rth(j-c) Total as per full IF(AV) maximum ratings 6.0 5.1 4.5

THERMA L RESISTANCES

Symbol Parameter Test conditions

Value

Unit

Tj = 25° C Tj = 125° C

Typ. Max. Typ. Max.

VF * Forward v oltage drop IF = 5 A DMV16 1.6 1.0 1.5 V

IF = 6 A DMV32 1.5 1.1 1.35

IF = 6 A DMV56 1.8 1.1 1.5

IR * * Reverse leak age c urrent VR = VRRM DMV16 60 100 500 µA

DMV32 100 100 1000

DMV56 100 100 1000

Pulse test : * t p = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction los ses of the DAM PER diode use the f ollowing equations :

DMV16: P = 1.14 x IF(AV) + 0.072 x IF2(RMS)

DMV32: P = 1.069 x IF(AV) + 0.047 x IF2(RMS)

DMV56: P = 1.15 x IF(AV) + 0.059 x IF2(RMS)

STAT IC ELECTRICAL CHARACTE RISTICS OF THE DAMP ER DIODES

Symbol Parameter Test conditions Value UnitTj = 25° C Tj = 125° C

Typ. Max. Typ. Max.

VF * Forward v oltage drop IF = 3A DMV16 1.4 1 1.3 V

IF = 5A DMV32 1.75 1.2 1.5

IF = 5A DMV56 1.75 1.2 1.5

IR ** Reverse leak age c urrent VR = 480V DMV16 20 150 500 µA

DMV32 100 600 2000

DMV56 100 600 2000

Pulse test : * t p = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction los ses of the MODULA TION diode use the f ollowing equations :

DMV16: P = 1.06 x IF(AV) + 0.08x IF2(RMS)

DMV32: P = 1.15 x IF(AV) + 0.07 x IF2(RMS)

DMV56: P = 1.15 x IF(AV) + 0.07 x IF2(RMS)

STATIC ELECTRICAL C HARACTERISTICS OF THE MODULATION D IODE

DMV series

2/9

Symbo l Parameter Test conditions Value Unit

Typ. Max.

trr R eve rs e r e covery ti me IF = 100mA

IR = 100mA

IRR = 10m A

Tj = 25°C DMV16 1500 ns

DMV32 850

DMV56 750

trr R eve rs e r e covery ti me IF = 1A

dIF/dt = -50A/µs

VR = 30V

Tj = 25° C DMV16 200 300 ns

DMV32 130 175

DMV56 110 135

RECOV ERY CHARAC TE RISTICS OF TH E DAMPER DIODE

Symbo l Parameter Test conditions Value Unit

Typ. Max.

tfr Forwa rd recovery ti me IF = 6A

dIF/dt = 80A/µs

VFR = 3V

Tj = 100° C DMV16 350 ns

DMV32 570

DMV56 350

VFP P eak forward v oltage IF = 6A

dIF/dt = 80A/µsTj = 100°C DMV16 25 34 V

DMV32 21 28

DMV56 19 26

TURN-O N SWITCHING CHARACT ERISTICS OF THE D AMPER DIODE

Symbo l Parameter Test conditions Value Unit

Typ. Max.

trr R eve rs e r e covery ti me IF = 100mA

IR = 100mA

IRR = 10m A

Tj = 25°C DM V16 210 650 ns

DMV32 110 350

DMV56 110 350

trr R eve rs e r e covery ti me IF = 1A

dIF/dt = -50A/µs

VR = 30V

Tj = 25° C DMV16 95 ns

DMV32 50

DMV56 50

RECOV ERY CHARAC TE RISTICS OF TH E MO DULATION DIOD E

Symbo l Parameter Test conditions Value Unit

Typ. Max.

tfr Forwa rd recovery ti me IF = 3A

dIF/dt = 80A/µs

VFR = 3V

Tj = 100° C DMV16 500 ns

IF = 5A

dIF/dt = 80A/µs

VFR = 3V

DMV32 300

DMV56 300

VFP P eak forward v oltage IF = 3A

dIF/dt = 80A/µsTj = 100°C DMV16 8 V

IF = 5A

dIF/dt = 80A/µsDMV32 10

DMV56 10

TURN-O N SWITCHING CHARACT ERISTICS OF THE M ODULATION DIO DE

DMV series

3/9

ORDERING INFORMATION

DMVxx / F5

LEAD BENDING (OPTION)

DAMPE R A ND MODULATION DIODES FOR VIDEO

0123456

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0 PF(av)(W)

DMV16

DMV32

DMV56

Ip(A)

Fig. 1-1: Power dissipation versus peak forward

current (triangular waveform, δ=0.45) (damper

diode.)

0123456

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0 PF(av)(W)

DMV16

DMV32/DMV56

Ip(A)

Fig. 1-2: Power dissipation versus peak forward

current (triangular waveform, δ=0.45) (modulation

diode)

0 25 50 75 100 125 150

7IF(av)(A)

Rth(j-a)=Rth(j-c)

DMV16

DMV32

DMV56

Tamb(°C)

=tp/T tp

Fig. 2 -1: Average forward current versus ambient

temperature (damper diode) .

0 25 50 75 100 125 150

6IF(av)(A)

DMV32/DMV56

DMV16

Rth(j-a)=Rth(j-c)

Tamb(°C)

=tp/T tp

Fig. 2-2: Average forward current v ers us ambient

temperature (modulat ion diode) .

DMV series

4/9

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0.1

1.0

10.0

20.0 IFM(A)

Typical

Tj=125°C

Maximum

Tj=25°C

Maximum

Tj=125°C

VFM(V)

Fig. 3-1: Forward voltage drop versus forward

current (damper diode) DM V16.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.1

1.0

10.0

50.0 IFM(A)

Typical

Tj=125°C

Maximum

Tj=25°C

Maximum

Tj=125°C

VFM(V)

Fig. 3-2: Forward voltage drop versus forward

current (damper diode)DMV32.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.1

1.0

10.0

50.0 IFM(A)

Typical

Tj=125°C

Maximum

Tj=25°C

Maximum

Tj=125°C

VFM(V)

Fig. 3-3: Forward voltage drop versus forward

current (damper diode)DMV56.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0.1

1.0

10.0

20.0 IFM(A)

Typical

Tj=125°C

Maximum

Tj=25°C

Maximum

Tj=125°C

VFM(V)

Fig. 3-4: Forward voltage drop versus forward

current (m odulation diode)DM V16.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0.1

1.0

10.0

20.0 IFM(A)

Typical

Tj=125°C

Maximum

Tj=25°C

Maximum

Tj=125°C

VFM(V)

Fig. 3-5: Forward voltage drop versus forward

current (modulation diode)DMV32 and DM V56.

1E-3 1E-2 1E-1 1E+0

0.1

0.2

0.5

1.0 K=[Zth(j-c)/Rth(j-c)]

tp(s)

=tp/T tp

Single pulse

δ= 0.1

δ= 0.2

δ= 0.5

Fig. 4: Relative variation of thermal impedance

junction to case v ersus pulse duration.

DMV series

5/9

1E-3 1E-2 1E-1 1E+0

40 IM(A)

Tc=100°C

DMV16

DMV32/DMV56

=0.5

t(s)

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (m odulation diode).

1E-3 1E-2 1E-1 1E+0

45 IM(A)

Tc=100°C

DMV56

DMV32

DMV16

t(s)

=0.5

Fig. 5-1: Non repetitive surge peak forward current

versus overload duration ( dam per diode).

0.1 0.2 0.5 1.0 2.0 5.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4 Qrr(µC)

IF=IF(av)

90% confidence

Tj=125°C

DMV56

DMV32

DMV16

dIF/dt(A/µs)

Fig. 6-1: Reverse recovery charges versus dIF/dt

(damper diode).

0.1 1.0 10.0 50.0

100

150

200

250

300

350

400

450

500 Qrr(nC)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 6-2: Reverse recovery charges versus dIF/dt

(modulation diode).

0.1 0.2 0.5 1.0 2.0 5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0 IRM(A)

IF=IF(av)

90% confidence

Tj=125°C

DMV16

DMV32

DMV56

dIF/dt(A/µs)

Fig. 7-1: Reverse recovery current versus dIF/dt

(damper diode).

0.1 1.0 10.0 100.0

10 IRM(A)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 7-2: Reverse recovery current versus dIF/dt

(modulation diode) .

DMV series

6/9

0 20 40 60 80 100 120 140

50 VFP(V)

IF=IF(av)

90% confidence

Tj=125°C DMV16

DMV32

DMV56

dIF/dt(A/µs)

Fig. 8-1: Transient peak forward voltage versus

dIF/dt (damper diode).

0 20 40 60 80 100 120 140 160 180 200

20 VFP(V)

IF=IF(av)

90% confidence

Tj=125°C DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 8-2: Transient peak forward voltage versus

dIF/dt (m odulation diode).

0 20 40 60 80 100 120 140

200

250

300

350

400

450

500

550

600

650

700 tfr(ns)

IF=IF(av)

90% confidence

Tj=125°C

Vfr=3V

DMV16/DMV32/DMV56

dIF/dt(A/µs)

Fig. 9-1: Forward recovery time versus dIF/dt

(damper diode).

0 20 40 60 80 100 120 140 160 180 200

100

150

200

250

300

350

400 tfr(ns)

IF=IF(av)

90% confidence

Tj=125°C

Vfr=1.5V

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 9-2: Forward recovery time versus dIF/dt

(modulation diode).

0 20 40 60 80 100 120 140

0.0

0.2

0.4

0.6

0.8

1.0

1.2 VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125°C]

VFP

IRM

Qrr

Tj(°C)

Fig. 10: Dynamic parameters versus junction

temperature (damper & modulation diodes ).

1 10 100 200

100

VR(V)

C(pF)

Tj=25°C

F=1MHz

Damper diodes

Modulation diodes

DMV16

DMV32 DMV56

DMV16 DMV32/DMV56

Fig. 11: Junction capacitance versus reverse

voltage applied (typic al values).

DMV series

7/9

PACKAGE M EC HANIC AL DATA

TO-220AB F5 OPT ION

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 15.20 15.90 0.598 0.625

a1 24.16 26.90 0.951 1.059

a3 1.65 2.41 0.064 0.094

B 10.00 10.40 0.393 0.409

b1 0.61 0.88 0.024 0.034

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

L 2.65 2.95 0.104 0.116

I2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

l4 15.80 16.80 0.622 0.661

16.40 typ. 0.645 typ.

M1 2.92 3.30 0.114 0.129

R1 1. 40 typ. 0.055 typ.

R2 1. 40 typ. 0.055 typ.

c2 a3

cooling method: by conduction (c)

Recom mended torque value: 0.8 m.N.

Maximum torque value: 1 m.N.

2.2mm

2.54mm

1mm 3.1mm

PRINTED CIRCUIT LAY OUT FOR F5 LAYOUT

DMV series

8/9

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Type Marking Package Weight Base qty Delivery mode

DMV16

DMV16/F5 DMV16 TO-220AB 2.2 g. 50 Tube

DMV32

DMV32/F5 DMV32 TO-220AB 2.2 g. 50 Tube

DMV56

DMV56/F5 DMV56 TO-220AB 2.2 g. 50 Tube

Epox y meets UL94, V0

PACKAGE M E CHANI CAL DATA

TO-220AB

REF. DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

b1 0.61 0.88 0.024 0.034

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

M 2.60 0.102

cooling m ethod: by conduction (c)

Recommended torque value: 0. 8 m.N.

Maximum torque value: 1 m.N.

DMV series

9/9