© 2013 IXYS All rights reserved 1 - 4
20130813g
MDD 312
IXYS reserves the right to change limits, test conditions and dimensions.
IFRMS = 2x 520 A
IFAVM = 2x 310 A
VRRM = 1200-2200 V
High Power
Diode Modules
Features
• International standard package
• Direct Copper Bonded Al2O3 ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature & power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
IFRMS
IFAVM
TVJ = TVJM TC = 25°C
180° sine TC = 100°C
520
310
A
A
IFSM TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
10500
11200
A
A
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
9200
9800
A
A
I2tTVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
551 000
527 000
A2s
A2s
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
423 000
403 000
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
3000
3600
V~
V~
MdMounting torque (M6)
Terminal connection torque (M8)
4.5 - 7
11-13
Nm
Nm
Weight Typical including screws 750 g
3 1 2
VRSM VRRM Type
V V
1300 1200 MDD 312-12N1
1500 1400 MDD 312-14N1
1700 1600 MDD 312-16N1
1900 1800 MDD 312-18N1
2100 2000 MDD 312-20N1
2300 2200 MDD 312-22N1
Symbol Conditions Characteristics Values
IRRM VR = VRRM TVJ = TVJM 30 mA
VFIF = 600 A; TVJ = 25°C 1.32 V
VT0
rt
For power-loss calculations only
TVJ = TVJM
0.8
0.6
V
mW
RthJC
RthJK
per diode; DC current
per module other values
per diode; DC current see MCC 255
per module
0.12
0.06
0.16
0.08
K/W
K/W
K/W
K/W
QS
IRM
IF = 400 A; -di/dt = 50 A/µs; TVJ = 125°C 700
260
µC
A
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
E72873
© 2013 IXYS All rights reserved 2 - 4
20130813g
MDD 312
IXYS reserves the right to change limits, test conditions and dimensions.
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7)
2.8 x 0.8
SW 13
M8 x 20
10 2
49
45
43
1
2 3
7654
80
92
115
6.2
20 22.5 35 28.5
50
38
18
UL 758, style 3751
52
+0
-1,4
32 +0
-1,9
Dimensions in mm (1 mm = 0.0394“)
© 2013 IXYS All rights reserved 3 - 4
20130813g
MDD 312
IXYS reserves the right to change limits, test conditions and dimensions.
0 25 50 75 100 125 1500 100 200 300 400 500
0
100
200
300
400
500
600
0 25 50 75 100 125 150
1 10
105
106
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
0 100 200 300 400 500 600
0
250
500
750
1000
1250
1500
1750
t [s]
0 25 50 75 100 125 150
0
100
200
300
400
500
IFSM
[A]
R L
80 % VRRM
TVJ = 45°C
TVJ = 150°C
50 Hz
TVJ = 150°C
VR = 0 V
TVJ = 45°C
180° sin
120°
60°
30°
DC
0.6
0.8
0.1
0.2
0.3
0.4
RthKA K/W
0.06
2 x MDD312
Circuit
B2U
0.12
0.06
0.04
RthKA K/W
0.5
0.08
0.2
0.3
50 1500 100 200
100
300
500
0
200
400
600
50 1500 100 200
0
5
10
15
20
25
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
IF = 400 A
IF = 400 A
t [ms]
I2t
[A2s]
TC [°C]
IFAVM
[A]
IFAVM [A] TA [°C]
Ptot
[W]
IRM
[A]
diF /dt [A/µs]
Ptot
[W]
IdAVM [A] TA [°C]
trr
[µs]
diF /dt [A/µs]
180° sin
120°
60°
30°
DC
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode) Fig. 5 Typ. peak reverse current
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
Fig. 7 Typ. recovery time trr
versus -diF /dt
© 2013 IXYS All rights reserved 4 - 4
20130813g
MDD 312
IXYS reserves the right to change limits, test conditions and dimensions.
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
ZthJC
[K/W]
0 25 50 75 100 125 1500 200 400 600 800
0
500
1000
1500
2000
2500
3000
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
3 x MDD312
Circuit
B6U
0.3
0.2
0.15
0.1
0.06
0.03
0.4
RthKA K/W
DC
180°
120°
60°
30°
DC
30°
60°
120°
180°
IFAVM [A] TA [°C]
Ptot
[W]
Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature
t [s]
t [s]
ZthJK
[K/W]
Fig. 9 Transient thermal impedance junction to case (per diode)
Fig. 10 Transient thermal impedance junction to heatsink (per diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.120
180°C 0.128
120°C 0.135
60°C 0.153
30°C 0.185
Constants for ZthJC calculation:
i Rthi (K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.160
180°C 0.168
120°C 0.175
60°C 0.193
30°C 0.225
Constants for ZthJK calculation:
i Rthi (K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
5 0.04 12
