146 EE-SX1096-W11 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1096-W11
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
Pre-wired Sensors (AWG28).
Solder-less lead wire connection to increase reliability.
With a horizontal aperture.
Absolute Maximum Ratings (Ta = 25C)
Note: 1. Refer to the temperature rating chart if the ambient tem-
perature exceeds 25C.
2. The pulse width is 10 s maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, spring
washers, and flat washers and use a tightening torque of 0.5
N·m max.
4. You should use the product in the condition without any
stress on the cable.
Electrical and Optical Characteristics (Ta = 25C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.3
3 < mm 6 ±0.375
K
A
C
E
6 < mm 10 ±0.45
10 < mm 18 ±0.55
18 < mm 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Sensing
window
2.1
±0.15
Two, R1
Two, 3.2
±0.2
dia. holes
Optical axis
2.5
±0.1
10
±0.2
3.55
11.6
±0.2
0.5
±0.1
2.1
±0.15
Detector
Emitter
7.2
±0.2
25
±0.2
19
±0.15
6
±0.2
5
±0.2
Optical axis
Two, C2
Four, C0.3
KA
4
3.1
610MIN
Cross section A-A
BA
BA
12.6
±0.2
3.4
±0.2
0.5
±0.1
Cross section B-B
EC Four, Wires UL1061,
AWG#28
A Red Anode
Terminal
No.
K Black Cathode
C White Collector
E Green Emitter
Color Name
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25C to 80C
Storage Tstg –25C to 85C
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 A typ., 10 A max. VR = 4 V
Peak emission wavelength P940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age
VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wave-
length
P850 nm typ. VCE = 10 V
Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA
Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA
Be sure to read Precautions on page 24.
EE-SX1096-W11 Photomicrosensor (Transmissive) 147
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. CollectorEmitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
(Center of optical axis)
d
Ambient temperature Ta (°C)
Collector dissipation P
C
(mW)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Forward current I
F
(mA)
Forward current I
F
(mA)
Light current I
L
(mA)
CollectorEmitter voltage V
CE
(V)
Light current I
L
(mA)
Ambient temperature Ta (°C)
Load resistance R
L
(kΩ)
I
F
P
C
Ta = 30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25°C
V
CC
= 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current I
L
(%)
Dark current I
D
(nA)
Relative light current I
L
(%)
I
F
= 50 mA
Ambient temperature Ta (°C)
Distance d (mm)
Relative Light Current vs.
Ambient Temperature Character-
istics (Typical)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Relative light current I
L
(%)
Distance d (mm)
100
80
60
40
20
0
1.52.0 1.0 0.5 0 0.5 1.0 1.5 2.0
120
100
80
60
40
20
0
0.5 0.25 0 0.25 0.5 0.75 1.0
120
d
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
(Center of
optical axis)