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OUTPUT
STAGE
VDD
VAMP
IN+
IN-
SGND
OUT+
OUT-
+2.5V to +5.5V
CS
CBST
BOOST
CONVERTER
GAIN
STAGE
GAIN
SW
PGND
VBST
L1
SHDN
D1
4.7 PH
1 PF
10:
0.47 PF
0.47 PF
CIN
CIN
Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM48580
SNAS491B FEBRUARY 2010REVISED FEBRUARY 2018
LM48580 Boomer™ Audio Power Amplifier Series High Efficiency Class H, High Voltage,
Haptic Piezo Actuator / Ceramic Speaker Driver
1
1 Features
1 Class H Driver
Integrated Boost Converter
Bridge-tied Load Output
Differential Input
Three Pin-Programmable Gains
Low Supply Current
Minimum External components
Micro-Power Shutdown
Thermal Overload Protection
Available in Space-Saving 12-bump DSBGA
Package
2 Applications
Touch Screen Smart Phones
Tablet PCs
Portable Electronic Devices
MP3 Players
Key Specifications:
Output Voltage at VDD = 3.6 V,
RL= 6 μF + 10 , THD+N 1%
30 VP-P (Typical)
Quiescent Power Supply Current at 3.6 V
2.7 mA (Typical)
Power Dissipation at 25 VP-P
800 mW (Typical)
Shutdown Current
0.1 μA (Typical)
3 Description
The LM48580 is a fully differential, high voltage driver
for piezo actuators and ceramic speakers for portable
multi-media devices. Part of TI’s Powerwise™
product line, the LM48580 Class H architecture offers
significant power savings compared to traditional
Class AB amplifiers. The device provides 30 VP-P
output drive while consuming just 15 mW of
quiescent power.
The LM48580 is a single supply driver with an
integrated boost converter which allows the device to
deliver 30 VP-P from a single 3.6 V supply.
The LM48580 has three pin-programmable gain
settings and a low power Shutdown mode that
reduces quiescent current consumption to 0.1 µA.
The LM48580 is available in an ultra-small 12-bump
DSBGA package.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM48580 DSBGA 2.00 mm x 1.80 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
2
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
7 Absolute Maximum Ratings.................................. 4
8 ESD Ratings ........................................................... 4
9 Recommended Operating Conditions ................. 4
10 Thermal Information.............................................. 4
11 Electrical Characteristics: VDD = 3.6 V............... 5
11.1 Typical Performance Characteristics ...................... 6
12 Parameter Measurement Information.................. 8
13 Detailed Description ............................................. 9
13.1 Overview................................................................. 9
13.2 Functional Block Diagram....................................... 9
13.3 Feature Description................................................. 9
13.4 Device Functional Modes...................................... 10
14 Application and Implementation........................ 11
14.1 Application Information.......................................... 11
14.2 Typical Application ............................................... 11
15 Power Supply Recommendations ..................... 12
16 Layout................................................................... 13
16.1 Layout Guidelines ................................................. 13
16.2 Layout Example .................................................... 13
17 Device and Documentation Support................. 14
17.1 Device Support .................................................... 14
17.2 Receiving Notification of Documentation Updates 14
17.3 Community Resources.......................................... 14
17.4 Trademarks........................................................... 14
17.5 Electrostatic Discharge Caution............................ 14
17.6 Glossary................................................................ 14
18 Mechanical, Packaging, and Orderable
Information........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (May 2013) to Revision B Page
Added Device Information table, ESD table, Thermal Information table, Parameter Measurement Information,
Feature Description,Device Functional Modes,Power Supply Recommendations,Layout section, Device and
Documentation Support, and Mechanical, Packaging, and Orderable Information................................................................ 1
Deleted the Demoboard Bill of Materials section ................................................................................................................. 12
Deleted the Demo Board Schematic section........................................................................................................................ 12
Changes from Original (February 2010) to Revision A Page
Changed layout of National Data Sheet to TI format. ............................................................................................................ 1
321
IN+
IN-
PGND
SGND
SHDN
SW
A
B
C
D
OUT- GAIN
OUT+
VAMP VDD
VBST
3
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5 Pin Configuration and Functions
DSBGA Package
YZR 12-Pin
Top View
YZR0012 Package
(Bumps Up) View
Pin Functions
Bump Name Description
A1 OUT+ Amplifier Non-Inverting Output
A2 SGND Amplifier Ground
A3 IN+ Amplifier Non-Inverting Input
B1 OUT- Amplifier Inverting Output
B2 GAIN Gain Select:
GAIN = float: AV= 18dB
GAIN = GND: AV= 24dB
GAIN = VDD: AV= 30dB
B3 IN- Amplifier Inverting Input
C1 VAMP Amplifier Supply Voltage. Connect to VBST
C2 SHDN Active Low Shutdown. Drive SHDN low to disable device.
Connect SHDN to VDD for normal operation.
C3 VDD Power Supply
D1 VBST Boost Converter Output
D2 SW Boost Converter Switching Node
D3 PGND Boost Converter Ground
4
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
6 Specifications
7 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply Voltage 6 V
SW Voltage 25 V
VBST Voltage 21 V
VAMP 17 V
Input Voltage 0.3 VDD + 0.3 V
Storage temperature, Tstg 65 150 °C
Junction Temperature 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8 ESD Ratings VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2) ±750
9 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT
Temperature Range 40 TA85 °C
Supply Voltage 2.5 VDD 5.5 V
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
10 Thermal Information
THERMAL METRIC(1) LM48580
UNITYZR (DSBGA)
12 PINS
RθJA Junction-to-ambient thermal resistance 82.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.6 °C/W
RθJB Junction-to-board thermal resistance 20.6 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 20.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
5
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(1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
(2) Datasheet min/max specification limits are specified by design, test, or statistical analysis.
(3) Typical values represent most likely parametric norms at TA= +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not specified.
11 Electrical Characteristics: VDD = 3.6 V(1)
The following specifications apply for RL= 6 μF + 10, CBST = 1 μF, CIN = 0.47 μF, AV= 24 dB unless otherwise specified.
Limits apply for TA= 25°C.
PARAMETER TEST CONDITIONS Min (2) Typ (3) Max (2) Unit
VDD Supply Voltage Range 2.5 5.5 V
IDD Quiescent Power Supply Current,
VIN = 0V, RL=
VDD = 3.6V 2.7 4 mA
VDD = 3V 3 mA
PDPower Consumption
VOUT = 25P-P, f = 200 Hz VDD = 3.6V 800 mW
VDD = 3V 830 mW
ISD Shutdown Current Shutdown Enabled 0.5 2 µA
TWU Wake-up Time From Shutdown 1 1.4 1.6 ms
VOS Differential Output Offset Voltage VDD = 3.6 V 63 360 mV
AVGain GAIN = FLOAT 17.5 18 18.5 dB
GAIN = GND 23.5 24 24.5 dB
GAIN = VDD 29.5 30 30.5 dB
RIN Input Resistance 46 52 58 k
RIN Gain Input Resistance to GND 575 k
to VDD 131 k
VIN Maximum Input Voltage Range AV= 18dB 3 VP-P
VOUT
Output Voltage
f = 200 Hz, THD+N = 1% VDD = 3.6 V 25 30.5 VP-P
VDD = 3 V 30.5 VP-P
Output Voltage
f = 2 kHz, THD+N = 5% VDD = 3.6 V 11 VP-P
VDD = 3 V 8.5 VP-P
THD+N Total Harmonic Distortion + Noise VOUT = 25VP-P, f = 200Hz 0.16%
PSRR Power Supply Rejection Ratio
VDD = 3.6 V + 200 mVp-p sine,
Inputs AC GND
fRIPPLE = 217 Hz, 75 dB
fRIPPLE = 1 kHz 71 dB
CMRR Common Mode Rejection Ratio
VCM = 200mVP-P sine fRIPPLE = 217 Hz 56 dB
fRIPPLE = 1 kHz 55 dB
fSW Boost Converter Switching
Frequency 2.1 MHz
ILIMIT Boost Converter Current Limit 1100 mA
VIH Logic High Input Threshold SHDN 1.2 V
VIL Logic Low Input Threshold SHDN 0.45 V
IIN Input Leakage Current SHDN 0.1 1 μA
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100
OUTPUT VOLTAGE (VP-P)
THD+N (%)
f = 2 kHz
f = 200 Hz
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100
OUTPUT VOLTAGE (VP-P)
THD+N (%)
f = 2 kHz
f = 200 Hz
0.1
1
10
100
10 100 1000 10000 100000
FREQUENCY (Hz)
OUTPUT VOLTAGE (VP-P)
0.1
1
10
100
10 100 1000 10000 100000
FREQUENCY (Hz)
OUTPUT VOLTAGE (VP-P)
6
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11.1 Typical Performance Characteristics
VDD = 3.6 V VOUT = 9 VP-P RL= 6 μF + 10
Figure 1. THD+N vs Frequency
VDD = 4.2 V VOUT = 10 VP-P RL= 6 μF + 10
Figure 2. THD+N vs Frequency
VDD = 3.6 V THD+N = 5% RL= 6 μF + 10
Figure 3. Output Voltage vs Frequency
VDD = 4.2 V THD+N = 5% RL= 6 μF + 10
Figure 4. Output Voltage vs Frequency
VDD = 3.6 V RL= 6 μF + 10 Ω
Figure 5. THD+N vs Output Voltage
VDD = 4.2 V RL= 6 μF + 10
Figure 6. THD+N vs Output Voltage
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000
FREQUENCY (Hz)
PSRR (dB)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000
FREQUENCY (Hz)
PSRR (dB)
0
5
10
15
20
25
30
35
2.5 3 3.5 4 4.5 5 5.5
SUPPLY VOLTAGE (V)
OUTPUT VOLTAGE (VP-P)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30 35
OUTPUT VOLTAGE (VP-P)
POWER DISSIPATION (mW)
f = 2 kHz
f = 200 Hz
0
500
1000
1500
2000
2500
0 5 10 15 20 25 30 35
OUTPUT VOLTAGE (VP-P)
POWER DISSIPATION (mW)
f = 2 kHz
f = 200 Hz
7
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Typical Performance Characteristics (continued)
VDD = 3.6 V RL= 6 μF + 10
Figure 7. Power Consumption vs Output Voltage
VDD = 4.2 V RL= 6 μF + 10
Figure 8. Power Consumption vs Output Voltage
RL= 6 μF + 10 , f = 200 Hz
Figure 9. Output Voltage vs Supply Voltage
VDD = 3.6 V f = 200 Hz RL= 6 μF + 10 ,
VRIPPLE = 200 mVP-P
Figure 10. PSRR vs Frequency
VDD = 3.6 V VCM = 1 VP-P RL= 6 μF + 10
Figure 11. CMRR vs Frequency
Copyright © 2018, Texas Instruments Incorporated
+
-
DUT ZL
ANALYZER
VDD
200 mVp-p
VDD
IN+
IN-
Copyright © 2018, Texas Instruments Incorporated
DUT ZL
ANALYZER
200 mVp-p
VDD
IN+
IN-
+
-
VDD
8
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12 Parameter Measurement Information
Figure 12. PSRR Test Circuit
Figure 13. CMRR Test Circuit
Copyright © 2018, Texas Instruments Incorporated
OUTPUT
STAGE
VDD
VAMP
IN+
IN-
SGND
OUT+
OUT-
+2.5V to +5.5V
CS
CBST
BOOST
CONVERTER
GAIN
STAGE
GAIN
SW
PGND
VBST
L1
SHDN
D1
4.7 PH
1 PF
10:
0.47 PF
0.47 PF
CIN
CIN
9
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13 Detailed Description
13.1 Overview
The LM48580 is a fully differential, Class H ceramic element driver for ceramic speakers and haptic actuators.
The integrated, high efficiency boost converter dynamically adjusts the amplifier’s supply voltage based on the
output signal, increasing headroom and improving efficiency compared to a conventional Class AB driver. The
fully differential amplifier takes advantage of the increased headroom and bridge-tied load (BTL) architecture,
delivering significantly more voltage than a single-ended amplifier.
13.2 Functional Block Diagram
13.3 Feature Description
13.3.1 Class H Operation
Class H is a modification of another amplifier class (typically Class B or Class AB) to increase efficiency and
reduce power dissipation. To decrease power dissipation, Class H uses a tracking power supply that monitors
the output signal and adjusts the supply accordingly. When the amplifier output is below 3 VP-P, the nominal
boost voltage is 6 V. As the amplifier output increases above 3 VP-P, the boost voltage tracks the amplifier output
as shown in Figure 14. When the amplifier output falls below 3 VP-P, the boost converter returns to its nominal
output voltage. Power dissipation is greatly reduced compared to conventional Class AB drivers.
Figure 14. Class H Operation
10
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Feature Description (continued)
13.3.2 Properties of Piezoelectric Elements
Piezoelectric elements such as ceramic speakers or piezoelectric haptic actuators are capacitive in nature. Due
to their capacitive nature, piezoelectric elements appear as low impedance loads at high frequencies (typically
above 5 kHz). A resistor in series with the piezoelectric element is required to ensure the amplifier does not see
a short at high frequencies.
The value of the series resistor depends on the capacitance of the element, the frequency content of the output
signal, and the desired frequency response. Higher valued resistors minimize power dissipation at high
frequencies, but also impacts the frequency response. This configuration is suited for use with haptic actuators,
where the majority of the signal content is typically below 2 kHz. Conversely, lower valued resistors maximize
frequency response, while increasing power dissipation at high frequency. This configuration is ideal for ceramic
speaker applications, where high frequency audio content needs to be reproduced. Resistor values are typically
between 10 and 20 .
13.3.3 Differential Amplifier Explanation
The LM48580 features a fully differential amplifier. A differential amplifier amplifies the difference between the
two input signals. A major benefit of the fully differential amplifier is the improved common mode rejection ratio
(CMRR) over single ended input amplifiers. The increased CMRR of the differential amplifier reduces sensitivity
to ground offset related noise injection, especially important in noisy systems.
13.3.4 Thermal Shutdown
The LM48580 features thermal shutdown that protects the device during thermal overload conditions. When the
junction temperature exceeds +160°C, the device is disabled. The LM48580 remains disabled until the die
temperature falls below the +160°C and SHDN is toggled.
13.3.5 Gain Setting
The LM48580 features three internally configured gain settings 18, 24, and 30 dB. The device gain is selected
through a single pin (GAIN). The gain settings are shown in Table 1.
Table 1. Gain Setting
Gain Gain Setting
FLOAT 18 dB
GND 24 dB
VDD 30 dB
13.4 Device Functional Modes
13.4.1 Shutdown Function
The LM48580 features a low current shutdown mode. Set SD = GND to disable the amplifier and boost converter
and reduce supply current to 0.01µA.
Copyright © 2018, Texas Instruments Incorporated
IN-
IN+
LM48580
SINGLE-ENDED
INPUT
11
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14 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
14.1 Application Information
14.2 Typical Application
The LM48580 is compatible with single-ended sources. When configured for single-ended inputs, input
capacitors must be used to block and DC component at the input of the device. Figure 15 shows the typical
single-ended applications circuit.
Figure 15. Single-Ended Configuration
14.2.1 Design Requirements
14.2.1.1 Proper Selection of External Components
14.2.1.1.1 Boost Converter Capacitor Selection
The LM48580 boost converter requires three external capacitors for proper operation: a 1 μF supply bypass
capacitor, and 1 μF + 100 pF output reservoir capacitors. Place the supply bypass capacitor as close to VDD as
possible. Place the reservoir capacitors as close to VBST and VAMP as possible. Low ESR surface-mount multi-
layer ceramic capacitors with X7R or X5R temperature characteristics are recommended. Select output
capacitors with voltage rating of 25 V or higher. Tantalum, OS-CON and aluminum electrolytic capacitors are not
recommended. See Table 2 for suggested capacitor manufacturers.
C1: OUT+
C2: OUT-
C3: BST Voltage
F1: (OUT+) - (OUT-)
C1: OUT+
C2: OUT-
C3: BST Voltage
F1: (OUT+) - (OUT-)
12
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Typical Application (continued)
(1) See Development Support
14.2.2 Detailed Design Procedure
14.2.2.1 Boost Converter Output Capacitor Selection
14.2.2.1.1 Inductor Selection
The LM48580 boost converter is designed for use with a 4.7 μH inductor. Table 2 lists various inductors and their
manufacturers. Choose an inductor with a saturation current rating greater than the maximum operating peak
current of the LM48580 (> 1 A). This ensures that the inductor does not saturate, preventing excess efficiency
loss, over heating and possible damage to the inductor. Additionally, choose an inductor with the lowest possible
DCR (series resistance) to further minimize efficiency losses.
Table 2. Recommended Inductors(1)
MANUFACTURER PART# INDUCTANCE/ISAT
Taiyo Yuden BRL3225T4R7M 4.7 µH/1.1 A
Coilcraft LP3015 4.7 µH/1.1 A
14.2.2.1.2 Diode Selection
Use a Schottkey diode as shown in the Functional Block Diagram. A 20 V diode such as the NSR0520V2T1G
from On Semiconductor is recommended. The NSR0520V2T1G is designed to handle a maximum average
current of 500 mA.
14.2.2.2 Application Curves
Figure 16. Full Scale Output 30 VPP at 1 kHz Figure 17. Full Scale Output 30 VPP at 100 Hz
15 Power Supply Recommendations
The LM48580 device is designed be operate with a power supply between 2.5 V and 5.5 V. Proper power supply
bypassing is critical for low noise performance and high PSRR. Place the supply bypass capacitors as close to
the device as possible. Place a 1-μF ceramic capacitor from VDD to GND. Additional bulk capacitance may be
added as required
13
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16 Layout
16.1 Layout Guidelines
Minimize trace impedance of the power, ground and all output traces for optimum performance.
Voltage loss due to trace resistance between the LM48580 and the load results in decreased output power
and efficiency.
Trace resistance between the power supply and ground has the same effect as a poorly regulated supply,
increased ripple and reduced peak output power.
Use wide traces for power supply inputs and amplifier outputs to minimize losses due to trace resistance, as
well as route heat away from the device.
Proper grounding improves audio performance, minimizes crosstalk between channels and prevents
switching noise from interfering with the audio signal.
Use of power and ground planes is recommended.
Place all digital components and route digital signal traces as far as possible from analog components and
traces. Do not run digital and analog traces in parallel on the same PCB layer. If digital and analog signal lines
must cross either over or under each other, ensure that they cross in a perpendicular fashion.
16.2 Layout Example
Figure 18. Example Layout
14
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17 Device and Documentation Support
17.1 Device Support
17.1.1 Development Support
17.1.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
17.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
17.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
17.4 Trademarks
Boomer, Powerwise, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
17.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
17.6 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
18 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
PACKAGE OPTION ADDENDUM
www.ti.com 5-Feb-2018
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM48580TL/NOPB ACTIVE DSBGA YZR 12 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 GM3
LM48580TLX/NOPB ACTIVE DSBGA YZR 12 3000 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 GM3
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 5-Feb-2018
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM48580TL/NOPB DSBGA YZR 12 250 178.0 8.4 1.68 2.13 0.76 4.0 8.0 Q1
LM48580TLX/NOPB DSBGA YZR 12 3000 178.0 8.4 1.68 2.13 0.76 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Feb-2018
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM48580TL/NOPB DSBGA YZR 12 250 210.0 185.0 35.0
LM48580TLX/NOPB DSBGA YZR 12 3000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Feb-2018
Pack Materials-Page 2
MECHANICAL DATA
YZR0012xxx
www.ti.com
TLA12XXX (Rev C)
0.600±0.075 D
E
A
. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
4215049/A 12/12
NOTES:
D: Max =
E: Max =
1.99 mm, Min =
1.49 mm, Min =
1.93 mm
1.43 mm
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