7P008FLA2301C15 - Microsemi Corp.

August 2000 Rev. 4 - ECO #13125 1

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Features

• Low cost High Density Linear Flash Card

• Supports 5V only systems or 5V systems with

12V VPP

• Based on Intel/Sharp FlashFile Components

• Fast Read Per forma nce

- 150ns or 200ns Maximum Access Time

• x8 / x16 Data Interface

• High Performance Random Writes

- 8µs Typical Word Write Time

• Automated Write and Erase Alg orithms

- Command User Interface

• 100,000 Erase Cycles per Block

• 64K word symme trical Block Architecture

• PC Card Standa rd Type I Form Factor

WEDC’s FLA Series Flash memory cards offer high density

linear Flash solid state storage solutions for code and data

storage, high performance disk emulation and execute in place

(XIP) applications in mobile PC and dedicated (embedded)

equipment.

FLA series cards conform to PCMCIA international standard .

The card’s control logic provides the system interface and

controls the internal Flash memories. Card can be

read/written in byte-wide or word-wide mode which allows

for flexible integration into various systems. Combined with

file management software, such as Flash Translation Layer

(FTL), FLA Flash cards provide re movable high-performance

disk emul at i on.

The FLA series offers low power modes controlled by

registers. Standard cards contain separate 2kB EEPROM

memory for Card Information Structure (CIS) which can be

used for easy ide ntification of card ch aracteristics.

The WEDC FLA series is based on Intel/Sharp Flash

memories.

Note:

Standard options include attribute memory. Cards without

attribute memory are available. Cards are also available with or

without a hardware write prote ct switc h.

PCMCIA Flash Memory Card 1 MEGABYTE through 40 MEGABYTE (Intel/Sharp based)

WEDC’s FLA series is designed to support from 2 to 20, 4Mb, 8Mb or 16Mb components, providing a wide range

of density options. Cards are based on the 28F008SA (8Mb) for 12V VPP applications or on the 28F004S5 (4Mb),

28F008S5 (8Mb) and 28F016S5 (16Mb) devices for 5V only applications. Devices codes for the 28F004S5,

28F008SA, 28F008S5 and the 28F016S5 are: A7H, A2H, A6H and AAh respectively. Systems should be able to

recognize all four co des. Cards utilizing the 8M b components pro vide densities ran g ing from 2MB to 20MB in 2MB

increments , cards utilizing 16Mb compone n ts provide densities r anging from 4MB to 40MB in 4MB increments. 4

Mbit memory devices are used only for smallest capacity cards (1MB).

In support of the PC Card 95 standard for word wide access devices are paired. Therefore, the Flash array is

structured in 64K word (128kBytes) blocks. Write, read and block erase operations can be performed as either a

word or byte wide o p e ration . By multiplexing A0, CE1# and CE2#, 8-bit hosts ca n access all data o n data lines

DQ0 - DQ7.

The FLA21-FLA3 6 series also supports the following PCMCIA co mpatib le register functions: Soft Reset via the

Configuration Option Register, Power Down (sleep mode) via the Configuration and Status Register and

monitoring of Ready/Busy, Soft Reset and Power Down via the Card Status Register (cards without attribute

mem ory and versions FLA51 - FLA66 do not have registers).

The FLA series cards conform with the PC Card Standard (PCMCIA) and JEIDA, providing electrical and physical

compatibility. The PC Card form factor offers an industry sta ndard pinout and mechanical outline, allowing density

upgrades without system design changes.

WEDC’s standard cards are shipped with WEDC’s Logo. Cards are also available with blank housings (no Logo).

The blank housings are available in both a recessed (for label) and flat housing. Please contact WEDC sales

representative for f urther information on Custom artwork.

General Description

Architecture Overview

August 2000 Rev. 4 - ECO #13125 2

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Block Diagram

Registers in Attribute Memory Space

Config uration Opt i on Register

4000h

Status Reg.4100h

4002h Co nfig. an d S t atus R e g.

ADDRESS

D7 Soft Reset, active High

1 = Reset St a t e

0 = End Reset State

D6 LevelReq (not supported)

D5-D0 Configuration index (not supported)

SRES D6

LREQ D4

COR

Configuration Option Register: ADRS=4000h

D2 D1 D0

Write Only

-Config uration Index-

Write Only

CSR

D2 Power Down; active High

1=Place all memory devices in power down mode

0=normal operation Power On default=0

not supported D1D7 D6 D2D5 D0D4

PDwn

not supported

Configur at io n Status Registe r: ADRS=4 002h

D5 Represents the state of SRESET bit in COR (4000h)

1=Reset

0=Norma l op erat i o n

Power On default D5=0

D3 Represents the state of Power Down bit (D2) in CSR (4002h)

1=Power Down

D0 Reflects the card's Ready/Busy signal (pin 16) driven by

memory compon ents Read y/Busy outputs .This bit allows software

polling of the card's Ready/Busy status.

1=Ready

SR Read Only

Status Register: ADRS=4100h

not supported

D1 R/BSY

SReset D4D7 D3D6 PDwn

Vcc

Device (N-2)

Device 1

CSn

Device 2 CS1

CS0

Device Pair 0

Device Pair 1 Device 3

Device Pair (N/2 - 1)

RH# DATA

BUS

Q0-Q7

I/O buffer

M Res

WH#

Vcc

DATA

BUS

D8-D15

control

4000h

Vcc

DATA

BUS

D0-D7

Device (N-1)

0000h

WL#

Card

Management

Registers

RL#

DATA

BUS

Q8-Q15

Device 0

Q0-Q7

WH#

WL#

CSn

RL#

RH#

At/Reg enable

CS0 C0

Control Logic

PCMCIA Interface

Ctrl

attrib. mem

CIS

EEPROM 2kB

WE#

OE#

CE2#

CE1#

REG#

WP SR Clr

Reg Clr

/SR

/PD

ADDRESS BUS

Control

Address

Bus

ADDRESS

BUFFER

Array

Address

Bus A1-A25

Manuf ID Device ID

Device type

28F008SA 89HA2H

28F008S5 89HA6H

28F016S5 89HAAH

28F004S5 89HA7H

August 2000 Rev. 4 - ECO #13125 3

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Pin Signal name I/O Function Active Pin Signal name I /O Function Active

1 GND Ground 35 GND Ground

2 DQ3 I/O Data bit 3 3 6 CD1 # O Ca rd Det ect 1 LOW

3 DQ4 I /O Data bit 4 37 DQ11 I/O Data bit 11

4 DQ5 I /O Data bit 5 38 DQ12 I/O Data bit 12

5 DQ6 I /O Data bit 6 39 DQ13 I/O Data bit 13

6 DQ7 I /O Data bit 7 40 DQ14 I/O Data bit 14

7 CE1# I Card enable 1 LOW 41 DQ15 I Data bit 15

8 A10 I Address bit 10 42 CE2# I Card Enable 2 LOW

9 OE# I Output enable LOW 43 VS1 O Voltage Sense 1 N.C.

10 A11 I A ddress bit 11 44 RFU Reserved

11 A 9 I Address bit 9 45 RFU Reserved

12 A 8 I Address bit 8 46 A17 I A ddress bit 17

13 A13 I Address bit 13 47 A18 I Address bit 18

14 A14 I Address bit 14 48 A19 I Address bit 19

15 WE# I Write Enable LOW 49 A20 I Address bit 20 2MB(3)

16 RDY / BSY#O Ready/Busy LOW (4) 50 A21 I Address bit 21 4MB(3)

17 V cc Supply Voltage 51 Vcc Supply Voltage

18 Vpp1 Prog. Voltage N .C. 52 Vpp2 Prog. Voltage N .C.

19 A16 I Address bit 16 53 A22 I Address bit 22 8MB(3)

20 A15 I Address bit 15 54 A23 I Address bit 23 16MB(3)

21 A12 I Address bit 12 55 A24 I Address bit 24 32MB(3)

22 A7 I A ddress bit 7 56 A25 I Address bit 25 64MB(3)

23 A6 I A ddress bit 6 57 VS2 O Voltage Sense 2 N.C.

24 A 5 I Address bit 5 58 RST I Card Reset H IGH (4)

25 A 4 I Address bit 4 59 Wait# O Extended Bus cycle Low(2,4)

26 A 3 I Address bit 3 60 RFU Reserved

27 A 2 I Address bit 2 61 REG# I Attrib Mem Select

28 A1 I Ad d ress bit 1 62 BVD2 O Bat. Volt. Detect 2 (2)

29 A0 I Ad d ress bit 0 63 BVD1 O Bat. Volt. Detect 1 (2)

30 DQ0 I /O Data bit 0 64 DQ8 I /O Data bit 8

31 DQ1 I /O Data bit 1 65 DQ9 I /O Data bit 9

32 DQ2 I/O Data b i t 2 66 DQ10 O Data b it 1 0

33 WP O Write Potect HIG H 67 CD2# O Card Detect 2 LOW

34 GND Ground 68 GND Ground

Pinout

Notes:

1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required.

2. Wait#, BVD1 and BVD2 are driven high for compatibility.

3. Shows density for which specified address bit is MSB. Higher order address bits are no connects

(ie 4MB A21 is MSB A22 - A25 are NC).

4. NC - No Connection for FLA51 - FLA66.

Mechanical

54.0mm ± 0.1 0

(2.126”)

10.0mm MIN

(0.400”)

1.6mm ± 0.05

(0.063”)

1.0mm ± 0.05

(0.039”)

1.0mm ± 0.05

(0.039”)

3.3mm ± T1 (0.130”)

T1=0.10mm interconnect area

T1=0.20mm substrate area

Interconnect area

10.0mm MIN

(0.400”) 3.0mm MIN

85.6mm ± 0.2 0

(3.370”)

Su bs tr a te a r e a

August 2000 Rev. 4 - ECO #13125 4

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Sy mbo l Ty pe Na me and F unct ion

A0 - A25 INPUT ADDRESS INPUTS: A0 through A25 enable direct addressing of up to

64MB of memory on the card. Signal A0 is not used in word access

mode. A 25 is the mos t signif icant bit

DQ0 - DQ15 INPUT/OUTPUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-

directional databus. DQ 15 is the MSB.

CE1#, CE2# INPUT CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#

enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-

bit hosts to access all data on DQ0 - DQ 7.

OE# INPUT OUTPUT ENABLE: Active low signal gating read data from the

memory card.

WE# INPUT WRITE EN A BL E : Active low signal gating write data to the memory

card.

RDY/BSY# OUTPUT RE ADY /BUSY OUTPUT: Ind i ca tes status of i nt ernally timed er ase or

program algorithms. A high output indicates that the card is ready to

accept accesses. A low output indicates that one or more devices in the

memory card are busy with internally timed erase or write activities.

CD1#, CD2# OUTPUT CARD DETECT 1 and 2: Provide card insertion detection. These

signals are internally connect ed to ground on the card. The host shall

monitor these signals to detect card insertion (pulled-up on host side).

WP OUTPUT WRITE PROTECT: W rite pro tect ref lects th e s tatu s of t he Wr ite Protect

switch on the memory card. WP set to hi gh = write protected, providing

internal hardware write lockout to the Flash array.

If card does not include optional write protect switch, this signal will be

pulled low internally indicating write protect = "off".

VPP1 , VPP2 N.C. PROGRAM/ERASE POWER SUPPLY: Pr ovides pro gr amming

voltages for card (12V). Not connected for 5V onl y card.

VCC CARD POWER SUPPLY: (5.0V) .

GND CARD GROUND

REG# INPUT ATTRIBUTE MEMO RY SELECT : Active low signal, enables access to

Att ribu te M emory Plan e, oc cupied by Car d I nformat ion Structure an d

Ca rd Reg isters.

RST INPUT RESET: Active high signal for placing card in Power-on default state.

Reset can be used as a Power-Down signal for the memory array.

WAIT# OUTPUT WAIT: This sign al is pulled high interna lly for c omp atibility. No wait

s tates a re g enera ted.

BVD1, BVD2 OUTPUT BATTERY VOLTAGE DETECT: Th es e signa l s are pulled high to

maintain SRAM card compatibility.

VS1, VS2 OUTPUT VOLTAGE SENSE: Notifi es the hos t s ock et of th e card 's VCC

requirements. VS1 and VS2 are open to indicate a 5V card .

RFU RESERVED FOR FUTURE USE

N.C. NO INTERNAL CONNECTIO N TO CARD: pin may be dr iv en or left

floating

Card Signal Description

READ function Common Memory Attribute Memory

Function Mode /CE2 /CE1 A0 /OE /WE /REG D15-D8 D7-D0 /REG D15-D8 D7-D0

St andby Mode H H X X X X High-Z High-Z X High-Z High-Z

Byte Access (8 bits) H L L L H H High-Z Even-Byte L High-Z Even-Byte

HLHLH H High-Z Odd-Byte LHigh-ZNot Valid

W ord Access (16 bits) L L X L H H Odd-Byte Even-Byte L Not Val id Even-Byte

Odd-Byte On ly Access L H X L H H Odd-Byte High-Z L Not V al id Hi gh-Z

WRITE function

St andby Mode H H X X X XX X XX X

Byte Access (8 bits) HLLHL H X Even-Byte L X Even-Byte

HLHHL H X Odd-Byte LX X

W ord Access (16 bits) L L X H L H Odd-Byte Even-Byte L X Even-Byte

Odd-Byte On ly Access L H X H L H Odd-Byte X LX X

Functional Truth Table

August 2000 Rev. 4 - ECO #13125 5

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Absolute Maximum Ratings (1)

Operating Temperature TA (ambient)

Commercial 0°C to +60 °C

Industrial -40°C to +85 °C

Storage Temperature

Commercial -30°C to +80 °C

Industrial -40°C to +85 °C

Voltage on any pin relative to VSS -0.5V to VCC+0.5V

VCC supply Voltage relative to VSS -0.5V to +7.0V

Note:

(1) Stress greater than those listed under

“Absolute Maximum ratings” may cause

permanent damage to the device. This is a

stress rating only and functional operation at

these or any other conditions greater than

those indicated in the operational sections of

this specification is not implied. Exposure to

absolute maximum rating conditions for

extended periods may affect reliability.

Symbol Parameter Density

(Mbytes) Notes Typ(3) M a x Units Tes t Conditions

ICCR VCC Read Current All 35 mA VCC = VCCmax

tcycle = 150ns,CM OS levels

ICCW VCC Program Current All 28F008S5

28F016S5 75 mA

ICCW VCC Program Current All 30 mA

IPPW VPP Program Current All

28F008SA

Vpp=12V 30 mA

ICCE VCC Erase Current All 100 mA

2MB 110 230

20MB 2

28F008SA 900

2MB 60

20MB 2

28F008S5 420

4MB 60

ICCS

(CMOS) VCC Standby Current

40MB 2

28F016S5 380

µA VCC = VCCmax

Control Signals = VCC

Reset = VSS, CMOS levels

Notes:

1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte wide operations.

For 16 bit operation values are double.

2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.

3. Typical: VCC = 5V, T = +25C.

CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V

DC Characteristics (1)

Symbol Parameter Notes Min Max Unit s Test Conditio ns

ILI Input Leakage Current 1 ±20 µA VCC = VCCMAX

Vin =VCC or VSS

ILO Output Leakage Current 1 ±20 µA VCC = VCCMAX

Vout =VCC or VSS

VIL Input Low Voltage 1 0 0.8 V

VIH Input High Voltage 1 0.7VCC V CC+0.5 V

VOL Output Low Voltage 1 0.4 V IOL = 3.2mA

VOH Output High Voltage 1 VCC-0.4 VCC V IOH = -2.0mA

VLKO VCC Erase/Program

Lock Voltage 12.0 V

Notes:

1. Values are the same for byte and word wide modes for all card densities.

2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to

internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal pull-down resistor.

August 2000 Rev. 4 - ECO #13125 6

PCMCIA Flash Memory Card

FLA Series

PC Card Products

150ns

SYMBOL

(PCMCIA) Parameter Min Max Unit

tC(R) Read Cycle Time 150 ns

ta(A) Address Access Time 150 ns

ta(CE) Card Enable Access Time 150 ns

ta(O E) Output Enable Access T ime 75 ns

tsu(A) A ddress Setup Time 20 ns

tsu(CE) Card Enable Setup Time 0 ns

th(A) Address Hold Time 20 ns

th(CE) Card Enable Hold Time 20 ns

tv(A) O utput Hold from Address

Change 0ns

tdis(CE) Output Disable Time from C E# 75 ns

tdis(O E) Output Disable Time from OE# 75 ns

ten(CE) O utput Enable Time from CE # 5 ns

ten(O E) O utput Enable Time from OE # 5 ns

trec(RS R) Pow er Down recovery to Output

Delay. VCC = 5V 500 ns

AC Characteristics

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.

Read Timing Diagram

NOTE 1

[2 5 ::0 ], /R E G

/C E1 , /CE 2

/OE

D[15::0]

tc(R)

ta(A) th(A)

tv(A)

ta(CE)

tsu(CE)

th(CE)

ten(OE)

ta(OE)

tsu(A)

DATA VALID

tdis(CE)

tdis(OE)

Read Timing Parameters

Note: Signal may be high or low in this area.

August 2000 Rev. 4 - ECO #13125 7

PCMCIA Flash Memory Card

FLA Series

PC Card Products

150n

SYMBOL

(PCMCIA) Parameter Min Max Unit

tCW

rite Cycle Time 150 ns

tw(WE)

rite Pulse Width 8 0 n s

tsu(A)

ddress Setup Time 20 ns

tsu(A-WEH)

ddress Setup Time for WE# 100 ns

tsu(CE-

WEH) Card Enable Setup Time for WE# 100 ns

tsu(D-WEH) D ata Setup T ime for WE# 50 ns

th(D) Data Hold Time 20 ns

trec(WE)

rite Recover Time 20 ns

tdis(WE) Output Disable Time from WE# 75 ns

tdis(OE) Output Disable Time from OE# 75 ns

ten(WE) Output Enable Time from WE# 5 ns

ten(OE) Output Enable Time from OE# 5 ns

tsu(OE-WE) Output Enable Setup from WE# 10 ns

th(OE-WE) Output Enable Hold from WE# 10 ns

tsu(CE) Card Enable Setup Time from OE# 0 ns

th(CE) Card Enable Hold Time 20 ns

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.

Write Timing Diagram

Write Timing Parameters

th(OE-W E)

NOTE 1

/C E1 , /C E2 NO TE 1

tsu(CE-W EH)

tc(W )

[2 5 ::0 ], /RE G

tw(W E)

tdis(W E)

th(D)

D[15::0](Din) DA TA INP UT

tsu(A)

tsu(A-W EH)

/OE

tsu(CE)

tsu(D-W EH)

trec(W E)

th(CE)

tsu(O E-W E)

tdis(OE)

D[15::0](Dout)

ten(OE)

ten(W E)

NOTE 2

/W E

Notes:

1. Signal may be high or low in this area

2. When the data I/O pins are in the output state, no signals shall be

applied to the data pins (D15 - D0) by the host system.

August 2000 Rev. 4 - ECO #13125 8

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Symbol Parameter Notes Min Typ(1) Max Units

tWHQV1

tEHQV1

Word/Byte Program time 4 8 µs

device SA 0.6 2.1

tWHQV2

tEHQV2

B lock P ro gra m Time device S5 0.4 0.5 sec

device SA 1.6 10Block Eras e Time device S5 0.9 1.1 sec

Data Write and Erase Performance (1,3)

Notes:

1. Typical: Nominal voltages and TA = 25C.

2. Excludes system overhead.

3. Valid for all speed options.

4. To maximize system performance RDY/BSY# signal should be polled.

VCC = 5V ± 5%, TA = 0C to + 70C

August 2000 Rev. 4 - ECO #13125 9

PCMCIA Flash Memory Card

FLA Series

PC Card Products

EDI

Company Name

Lot code / trace number

Date code

Part number

PRODUCT MARKING

WED 7P016FLA6200C15 C995 9915

Note:

Some products are currently marked with our pre-merger company name/acronym (EDI). During our

transition period, some products will also be marked with our new company name/acronym (WED).

Starting October 2000 all PCMCIA products will be marked only with the WED prefix.

Card capacity

016 16MB

Packaging option

00 Standard, type 1

PC card

P Standard PCMCIA

R Ruggedized PCMCIA

Card family and version

- See Card Family and Version Info. for details (next page)

Temperature range

C Commercial 0°C to +70°C

I Industrial -40°C to +85°C

Card access time

15 150ns

25 250ns

Card technology

7FLASH

8SRAM

PART NUMBERING

7 P 016 FLA62 00 C 15

August 2000 Rev. 4 - ECO #13125 10

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Card Family and Version Information

FLA21-FLA24 Based on 28F008SA (requires 12V VPP for programming and erase functions)

FLA21 No Attribute Memory, no Write Protect

FLA22 With Attribute Memory, no Write Protect

FLA23 No Attribute Memory, with Write Protect

FLA24 With Attribute Memory, with Write Protect

Example P/N 7P004FLA2200C15

FLA25-FLA28 Based on 28F008S5 for 5V only applications

FLA25 No Attribute Memory, no Write Protect

FLA26 With Attribute Memory, no Write Protect

FLA27 No Attribute Memory, with Write Protect

FLA28 With Attribute Memory, with Write Protect

Example P/N 7P004FLA2600C15

FLA29-FLA32 Based on 28F016S5 for 5V only applications

FLA29 No Attribute Memory, no Write Protect

FLA30 With Attribute Memory, no Write Protect

FLA31 No Attribute Memory, with Write Protect

FLA32 With Attribute Memory, with Write Protect

Example P/N 7P004FLA3000C15

FLA33-FLA36 Based on 28F004S5 for 5V only applications

FLA33 No Attribute Memory, no Write Protect

FLA34 With Attribute Memory, no Write Protect

FLA35 No Attribute Memory, with Write Protect

FLA36 With Attribute Memory, with Write Protect

Example P/N 7P004FLA3600C15

FLA51-FLA54 Based on 28F008SA Similar to FLA21-FLA24: does not support registers and signals

RST, RDY/BSY, Wa it a re not con necte d

FLA51 No Attribute Memory, no Write Protect

FLA52 With Attribute Memory, no Write Protect

FLA53 No Attribute Memory, with Write Protect

FLA54 With Attribute Memory, with Write Protect

Example P/N 7P004FLA5200C15

FLA55-FLA58 Based on 28F008S5 Similar to FLA25-FLA28: does not support registers and signals

RST, RDY/BSY, Wa it a re not con necte d

FLA55 No Attribute Memory, no Write Protect

FLA56 With Attribute Memory, no Write Protect

FLA57 No Attribute Memory, with Write Protect

FLA58 With Attribute Memory, with Write Protect

Example P/N 7P004FLA5600C15

August 2000 Rev. 4 - ECO #13125 11

PCMCIA Flash Memory Card

FLA Series

PC Card Products

FLA59-FLA62 Based on 28F016S5 Similar to FLA29-FLA32: does not support registers and signals

RST, RDY/BSY, Wa it a re not con necte d

FLA59 No Attribute Memory, no Write Protect

FLA60 With Attribute Memory, no Write Protect

FLA61 No Attribute Memory, with Write Protect

FLA62 With Attribute Memory, with Write Protect

Example P/N 7P004FLA6000C15

FLA63-FLA66 Based on 28F004S5 Similar to FLA33-FLA36: does not support registers and signals

RST, RDY/BSY, Wa it a re not con necte d

FLA63 No Attribute Memory, no Write Protect

FLA64 With Attribute Memory, no Write Protect

FLA65 No Attribute Memory, with Write Protect

FLA66 With Attribute Memory, with Write Protect

Example P/N 7P004FLA6600C15

August 2000 Rev. 4 - ECO #13125 12

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Ordering Information

7P XXX FLAYY SS T ZZ

where

XXX: 002 1) 2MB

004 4MB

006 1) 6MB

008 8MB

010 1) 10MB

012 12MB

014 1) 14MB

016 16MB

018 1) 18MB

020 20MB

024 2) 24MB

028 2) 28MB

032 2) 32MB

036 2) 36MB

040 2) 40MB

1) available only for FLA21-FLA24, FLA25-FLA28, FLA51-FLA54,

and FLA55- FLA59

2) available only for FLA29-FLA32 and FLA59-FLA62

FLAYY: Card Family and Version (See Card Family and Version Information)

SS: 00 WEDC Logo Silkscreen

01 Blank Housing, Type I

02 Blank Housing, Type I Recessed

T: C Commercial 0°C to +70°C

I** Industrial -40°C to +85°C

ZZ: 15 150ns

Notes: Options without attribute memory and with hardware write protect switch are available.

** Denotes advanced information.

August 2000 Rev. 4 - ECO #13125 13

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Address Value Description Address Value Description

00H 01H CISTPL_DEVICE 30H F6H EDI TPLM ID_MA NF : LS B

02H 03H TPL_LINK 32H 01H EDI TPLM ID_MA NF: M S B

04H 53H FLA SH = 150ns (devic e writabl e) 34H 00H LS B : Number Not A ss i gned

06H 06H CA RD SIZE: 2MB 36H 00H MSB: Num ber Not As s igned

0EH 4MB 38H 15H CISTPL_VERS1

16H 6MB 3AH 47H TPL_LINK

1EH 8MB 3CH 05H TPLLV1_MAJOR

26H 10MB 3EH 00H TPLLV1_MINOR

2EH 12MB 40H 45H E

36H 14MB 42H 44H D

3EH 16MB 44H 49H I

46H 18MB 46H 37H 7

4EH 20MB 48H 50H P

5EH 24MB 4AH 30H 0

6EH 28MB 4CH x

7EH 32MB 4EH x

8EH 36MB 50H 46H F

9EH 40MB 52H 4CH L

08H FFH END OF DEVICE 54H 41H A

0AH 18H CISTPL_JEDEC_C 56H 32H 2 based on

0CH 02H TPL_LINK 58H 32H 2 28F008S A

0EH 89H INTEL - ID 32H 2 based on

10H A2H INTEL 28F008SA - ID 36H 6 28F008S 5

A6H INTEL 28F008S 5 - ID 33H 3 based on

AAH INTEL 28F016S 5 - ID 30H 0 28F016S 5

12H 17H CISTPL_DEVICE_A 5AH 2DH -

14H 03H TPL_LINK 5CH 2DH -

16H 42H E E P RO M - 200ns 5E H 2DH -

18H 01H Device Size = 2KBy tes 60H 31H 1

1AH FFH E ND OF TUPLE 62H 35H 5

1CH 1EH CISTPL_DEVICEGEO 64H 20H SPACE

1EH 06H TPL_LINK 66H 00H END TEXT

20H 02H DGTPL_BUS 68H 43H C

22H 11H DGTPL_EBS 6AH 4FH O

24H 01H DGTPL_RBS 6CH 50H P

26H 01H DGTPL_WBS 6EH 59H Y

28H 01H DGTPL_PART 70H 52H R

2AH 01H FLASH DEVICE 72H 49H I

NON-INTERLEAVED 74H 47H G

2CH 20H CISTPL_MANFID 76H 48H H

2EH 04H TPL_LINK(04H) 78H 54H T

7AH 20H SPACE

CIS Information for FLA Series Cards

August 2000 Rev. 4 - ECO #13125 14

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Address Value Description

7CH 45H E

7EH 4CH L

80H 45H E

82H 43H C

84H 54H T

86H 52H R

88H 4FH O

8AH 4EH N

8CH 49H I

8EH 43H C

90H 20H SPACE

92H 44H D

94H 45H E

96H 53H S

98H 49H I

9AH 47H G

9CH 4EH N

9EH 53H S

A0H 20H SPACE

A2H 49H I

A4H 4EH N

A6H 43H C

A8H 4FH O

AAH 52H R

ACH 50H P

AEH 4FH O

B0H 52H R

B2H 41H A

B4H 54H T

B6H 45H E

B8H 44H D

BAH 20H SPACE

BCH 00H END TEX T

BEH 31H 1

C0H 39H 9

C2H 39H 9

C4H 37H 7

C6H 00H END TEXT

C8H FFH END OF LIST

CAH 1AH CISTPL_CONF

CCH 05H TPL_LINK

CEH 01H TPCC_SZ

D0H 00H TPCC_LAST

D2H 00H TPCC_RADR

D4H 40H TPCC_RADR

D6H 03H TPCC_RMSK

D8H 00H NUL L CONTRO L TUPLE

DAH FFH CISTPL_END

DCH 00H I NVALID ADDRESS

CIS Information for FLA Series Cards (Cont.)

August 2000 Rev. 4 - ECO #13125 15

PCMCIA Flash Memory Card

FLA Series

PC Card Products

Revision History:

rev level descript i on date

rev 0 initial release May 26, 1998

rev 1 Logo change May 27, 1999

rev 2 Change in Ordering info: January 31, 2000

added FLA24, took “EDI”

off of all part numbers,

changed “EDI Silkscreen”

to “WEDC Logo Silkscreen”

rev 3 Heading/Logo changed and May 30, 2000

added to all pages

Changes to Pages 1 & 12

Pages 9-11:

Added Product Marking Info,

added Family and Version Information,

edited Ordering Info,

edited General description

and edited Architecture Overview

rev 4 Corrected Errors on pgs. 6 & 7 August 1, 2000

White Elect ronic Desi gns Corporation

One Research Drive, Westborough, MA 01581, USA

tel: (508) 366 5151

fax: (508) 836 4850