VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Repetitive peak reverse voltage DC forward current Conditions min max Unit VRRM 6500 V IF 600 A Peak forward current IFRM tp = 1ms 1200 A Total power dissipation Ptot Tc = 25 C, per diode 4760 W Surge current IFSM 6000 A Isolation voltage Visol 10200 V Junction temperature Tvj 125 C Junction operating temperature 1) Symbol VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave 1 min, f = 50 Hz Tvj(op) -50 125 C Case temperature Tc -50 125 C Storage temperature Tstg -50 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLD 0600J650100 Diode characteristic values Parameter Forward voltage 2) Symbol Conditions VF IF = 600 A Continuous reverse current IR VR = 6500 V Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr 3) Erec Module stray inductance L 2) 3) typ max Tvj = 25 C 3.2 3.8 Tvj = 125 C 3.4 4.0 Tvj = 25 C VR = 3600 V, IF = 600 A, VGE = 15 V, di/dt = 2500 A/s L = 280 nH inductive load, switch: Reverse recovery energy Resistance, terminal-chip min 6 Tvj = 125 C 35 Tvj = 25 C 790 Tvj = 125 C 990 Tvj = 25 C 700 Tvj = 125 C 1200 Tvj = 25 C 1700 Tvj = 125 C 2200 Tvj = 25 C 1100 Tvj = 125 C 2200 per diode AC RAA'+CC' TC = 25 C 0.2 TC = 125 C 0.3 C ns mJ nH 4) Parameter Symbol Diode thermal resistance junction to case Diode thermal resistance case to heatsink Conditions min grease = 1W/m x K 0.018 K/W 4) Dimensions LxW x Conditions H Typical , see outline drawing min typ max 130 x 140 x 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Comparative tracking index CTI Mass Unit 0.021 K/W Rth(c-s)DIODE diode per switch, Symbol 5) max 5) Parameter Mounting torques typ Rth(j-c)DIODE Mechanical properties 5) A Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties 4) V mA 75 36 per diode Unit Unit mm mm 26 mm 56 600 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 m 1150 Nm g Thermal and mechanical properties according to IEC 60747 - 15 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1412-01 04-2012 page 2 of 5 5SLD 0600J650100 Electrical configuration Outline drawing C (7) C (5) A (6) A (4) 5) Note: all dimensions are shown in mm 5) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1412-01 04-2012 page 3 of 5 5SLD 0600J650100 2500 3000 Erec Qrr 2000 1000 Qrr 2000 800 Erec [mJ] 1500 1500 600 Erec 1000 Irr 1000 400 Irr VCC = 3600 V IF = 600 A Tvj = 125 C L = 280 nH 500 500 -3 2 Erec [mJ] = -1.2 x 10 x IF + 3.43 x IF + 530 0 300 600 900 1200 0 0 1 IF [A] Fig. 1 200 0 0 Qrr [C], Irr [A] 2500 Erec [mJ], Qrr [C], Irr [A] 1200 VCC = 3600 V di/dt = 2500 A/s Tvj = 125 C L = 280 nH 2 3 4 di/dt [kA/s] Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt 1400 1200 VCC 4400 V di/dt 4000 A/s Tvj = 125 C L 280 nH 1200 1000 1000 25 C 800 800 IR [A] IF [A] 125 C 600 600 400 400 200 200 0 0 0 1 2 3 4 0 5 Fig. 3 Typical diode forward characteristics, chip level 1000 2000 3000 4000 5000 6000 7000 VR [V] VF [V] Fig. 4 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1412-01 04-2012 page 4 of 5 5SLD 0600J650100 0.1 Analytical function for transient thermal impedance: Zth(j-c) Diode R i (1 - e -t/ i ) Z th (j-c) (t) = 0.01 i 1 DIODE Zth(j-c) [K/W] DIODE n 0.001 i 1 2 Ri(K/kW) 17 4.2 144 5.83 i(ms) 3 4 5 0.0001 0.001 Fig. 5 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2058 Surge currents for IGBT diodes 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1412-01 04-2012