MCMA260P1600YA
Phase leg
Thyristor Module
3 1 2
6 57 4
Part number
MCMA260P1600YA
Backside: isolated
TAV
T
V V1.06
RRM
260
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Y4
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA260P1600YA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.12
R0.13 K/W
min.
260
VV
300T = 25°C
VJ
T = °C
VJ
mA20V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
880 WT = 25°C
C
200
1600
forward voltage drop
total power dissipation
Conditions
Unit
1.33
T = 25°C
VJ
140
V
T0
V0.81T = °C
VJ
140
r
T
1.23 mΩ
V1.06T = °C
VJ
I = A
T
V
200
1.31
I = A400
I = A400
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA408
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
140
Wt = 60
P
P
GAV
W20
average gate power dissipation
C
J
366
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
8.30
8.97
248.9
241.6
kA
kA
kA
kA
7.06
7.62
344.5
334.3
1600
500 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
100repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 140°C
critical rate of rise of voltage
A/µs260
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
780 A
T
P
G
= 0.5
di /dt A/µs;
G
=0.5
DRM
cr
V = ⅔ V
DRM
GK
1000
2 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
3 V
220 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.25 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
200 mA
I
L
25t µs
p
= 30
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
holding current
T = °C
VJ
150 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
V = ½ V
D DRM
turn-off time
T = °C
VJ
200 µs
t
q
di/dt = A/µs10 dv/dt = V/µs50
V =
R
100 V; I A;
T
= 260 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 500 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.08
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA260P1600YA
Ratings
Part Number
yywwAA
Date Code (DC)
+
Production
Index (PI) Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Circuit
C
M
M
A
260
P
1600
YA
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
Y4-M6
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm2.75
mounting torque
2.25
T
VJ
°C140
virtual junction temperature
-40
Weight g150
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm5.5
terminal torque
4.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
300 A
per terminal
125-40
terminal to terminal
Y4
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCMA260P1600YA 509785Box 6MCMA260P1600YAStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.81
mΩ
V
0 max
R
0 max
slope resistance *
0.59
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
140 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA260P1600YA
g
C-C (1:1)
e
n
d
r
j
B-B (1:1)
b
DCB
A (3:1)
c
a
M6
p
f
2.8
/
0.8
A
o
Dim. MIN
[mm]
MAX
[mm]
MIN
[inch]
MAX
[inch]
a 30.0 30.6 1.181 1.205
b
c 64.0 65.0 2.520 2.559
d 6.5 7.0 0.256 0.275
e 4.9 5.1 0.193 0.201
f 28.6 29.2 1.126 1.150
g 7.3 7.7 0.287 0.303
h 93.5 94.5 3.681 3.720
i 79.5 80.5 3.130 3.169
j 4.8 5.2 0.189 0.205
k 33.4 34.0 1.315 1.339
l 16.7 17.3 0.657 0.681
m 22.7 23.3 0.894 0.917
n 22.7 23.3 0.894 0.917
o 14.0 15.0 0.551 0.591
p
q 22.8 23.3 0.898 0.917
r 1.8 2.4 0.071 0.041
typ. 0.25 typ. 0.010
typ. 10.5 typ. 0.413
k
h
1 2 3
4
56
7
n m l
1
1
1
0
8
9
q
i
C C
B
B
3 1 2
6 57 4
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA260P1600YA
0 40 80 120 160
0
80
160
240
320
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
3000
4000
5000
6000
7
0
00
0.0 0.5 1.0 1.5
0
100
200
300
4
0
0
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
I
T
[A
]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
4
10
5
10
6
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
= 0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current vs.
case temperature per thyr.
Fig. 8 Transient thermal impedance junction to case
vs. time per thyristor
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 80 160 240 320
0
70
140
210
280
350
420
I
T(AV)
[A]
P
tot
[
W]
Fig. 7 Power dissipation vs. forward current
a
nd
am
b
i
e
n
t
temperature
p
e
r
th
y
ri
s
tor
0 70 140
T
amb
[°C]
T
VJ
= 125°C
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
I
G
[A]
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
T
VJ
= 140°C
T
VJ
= 140°C
T
VJ
= 125°C
140°C
i R
thi
(K/W) t
i
(s)
1 0.0100 0.00014
2 0.0065 0.01900
3 0.0250 0.18000
4 0.0615 0.52000
5 0.0270 1.60000
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
V
G
[V]
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
1
2
3
4
5
6
I
GD
, T
VJ
= 140°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
