TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage MT1 1 Max IGT of 50 mA (Quadrants 1 - 3) MT2 2 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC226D E T E L O S B O TIC226M Repetitive peak off-state voltage (see Note 1) TIC226S 600 VDRM V 700 TIC226N Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) UNIT 400 800 IT(RMS) 8 Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) ITSM 70 A Peak gate current IGM 1 A W Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) A PGM 2.2 PG(AV) 0.9 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Average gate power dissipation at (or below) 85C case temperature (see Note 4) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 320 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT TEST CONDITIONS Repetitive peak off-state current VD = rated VDRM IG = 0 MIN TYP TC = 110C MAX UNIT 2 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 6 50 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -12 -50 current Vsupply = -12 V RL = 10 tp(g) > 20 s -10 -50 Vsupply = -12 V RL = 10 tp(g) > 20 s 25 Vsupply = +12 V RL = 10 tp(g) > 20 s 0.7 2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -0.8 -2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -0.8 -2 Vsupply = -12 V RL = 10 tp(g) > 20 s 0.9 2 On-state voltage IT = 12 A IG = 50 mA (see Note 5) 1.5 2.1 mA V V All voltages are with respect to Main Terminal 1. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC226 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current Init' ITM = 100 mA 10 30 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -6 -30 Critical rise of commutation voltage MIN VDRM = Rated VDRM IG = 0 VDRM = Rated VDRM ITRM = 12 A UNIT mA 50 (see Note 6) Vsupply = -12 V off-state voltage dv/dt(c) MAX IG = 0 Vsupply = +12 V Critical rate of rise of dv/dt TYP Vsupply = +12 V mA -50 TC = 110C 100 TC = 85C V/s 5 V/s (see figure 7) All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP E T E L O S B O MAX UNIT 1.8 C/W 62.5 C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 1000 + + - CASE TEMPERATURE TC01AA VAA = 12 V RL = 10 tp(g) = 20 s + + 100 10 1 -60 -40 -20 0 20 40 60 80 100 120 VAA = 12 V Vsupply IGTM + + - + - - + RL = 10 tp(g) = 20 s } 1 0*1 -60 -40 -20 0 20 40 60 80 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. 2 TC01AB 10 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA Vsupply IGTM GATE TRIGGER VOLTAGE vs 100 120 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC226 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE Vsupply IGTM 100 10 1 -40 + + - IG = 0 Initiating ITM = 100 mA IL - Latching Current - mA IH - Holding Current - mA 1000 VAA = 12 V Vsupply + - 0*1 -60 CASE TEMPERATURE TC01AD 1000 -20 VAA = 12 V + + 100 10 E T E L O S B O 0 20 40 60 80 100 1 -60 120 TC01AE -40 -20 TC - Case Temperature - C 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. Figure 4. THERMAL INFORMATION MAX AVERAGE POWER DISSIPATED vs MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE RMS ON-STATE CURRENT TI01AB P(av) - Maximum Average Power Dissipated - W IT(RMS) - Maximum On-State Current - A 10 9 8 7 6 5 4 3 2 1 0 32 TI01AC TJ = 110 C 28 Conduction Angle = 360 Above 8 A rms See ITSM Figure 24 20 16 12 8 4 0 0 25 50 75 100 125 0 2 4 6 8 10 12 TC - Case Temperature - C IT(RMS) - RMS On-State Current - A Figure 5. Figure 6. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 14 16 3 TIC226 SERIES SILICON TRIACS PARAMETER MEASUREMENT INFORMATION VAC VAC L1 ITRM IMT2 IMT2 C1 50 Hz VMT2 VDRM DUT RG See Note A R1 VMT2 10% dv/dt 63% E T E L O S B O IG IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. PMC2AA Figure 7. 4 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.