TIC226 SERIES
SILICON TRIACS
1
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●8 A RMS
●Glass Passivated Wafer
●400 V to 800 V Off-State Voltage
●Max IGT of 50 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC226D
TIC226M
TIC226S
TIC226N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 8 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 70 A
Peak gate current IGM ±1 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) PGM 2.2 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 4) PG(AV) 0.9 W
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = rated VDRM IG = 0 TC = 110°C ±2 mA
IGT
Gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
6
-12
-10
25
50
-50
-50 mA
VGT
Gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
VTOn-state voltage IT = ±12 A IG = 50 mA (see Note 5) ±1.5 ±2.1 V
† All voltages are with respect to Main Terminal 1.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
OBSOLETE
TIC226 SERIES
SILICON TRIACS
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
IHHolding current Vsupply = +12 V†
Vsupply = -12 V†
IG = 0
IG = 0
Init’ ITM = 100 mA
Init’ ITM = -100 mA
10
-6
30
-30mA
ILLatching current Vsupply = +12 V†
Vsupply = -12 V† (see Note 6) 50
-50mA
dv/dt Critical rate of rise of
off-state voltage VDRM = Rated VDRM IG = 0 TC = 110°C ±100 V/µs
dv/dt(c)
Critical rise of commu-
tation voltage VDRM = Rated VDRM ITRM = ±12 A
TC = 85°C
(see figure 7)
±5 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.8 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GATE TRIGGER CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IGT - Gate Trigger Current - mA
1
10
100
1000 TC01AA
CASE TEMPERATURE
vs
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
Vsupply IGTM
+ +
+ -
- -
- +
GATE TRIGGER VOLTAGE
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
VGT - Gate Trigger Voltage - V
0·1
1
10 TC01AB
CASE TEMPERATURE
vs
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
Vsupply IGTM
+ +
+ -
- -
- +
}
OBSOLETE
TIC226 SERIES
SILICON TRIACS
3
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
THERMAL INFORMATION
Figure 5. Figure 6.
HOLDING CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IH - Holding Current - mA
0·1
1
10
100
1000 TC01AD
CASE TEMPERATURE
vs
Vsupply
+
-
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
LATCHING CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IL - Latching Current - mA
1
10
100
1000 TC01AE
CASE TEMPERATURE
vs
VAA = ± 12 V
Vsupply IGTM
+ +
+ -
- -
- +
MAX RMS ON-STATE CURRENT
TC - Case Temperature - °C
0 255075100125
IT(RMS) - Maximum On-State Current - A
0
1
2
3
4
5
6
7
8
9
10 TI01AB
CASE TEMPERATURE
vs
MAX AVERAGE POWER DISSIPATED
IT(RMS) - RMS On-State Current - A
0246810121416
P(av) - Maximum Average Power Dissipated - W
0
4
8
12
16
20
24
28
32 TI01AC
RMS ON-STATE CURRENT
vs
Conduction Angle = 360 °
Above 8 A rms
TJ = 110 °C
See ITSM Figure
OBSOLETE
TIC226 SERIES
SILICON TRIACS
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 7.
VAC
VMT2
IMT2
DUT
See
Note A
RG
C1
R1
IG
VAC
IMT2
VMT2
IG
ITRM
dv/dt
10%
63%
L1
VDRM
50 Hz
PMC2AA
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
OBSOLETE
