KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP3S6C TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A FEATURES i * * Complementary to TIP35C. a O GFo \) fs} * Recommended for 75W Audio Frequency Amplifier Output Stage. | aA DIM | MILLIMETERS * Iemax:-25A b | , 15. cS + t S Cc 20.0+0.3 | | | t D 2.040.3 D | | d 1.0+0.3/-0.25 i | ' a E 2.0 MAXIMUM RATINGS (Ta=25C) I i | ot aa Mak to | H 9.0 CHARACTERISTIC SYMBOL | RATING | UNIT I 4.5 P P T J 2.0 Collector-Base Voltage Veo -100 C ba be0 5 M 2.8 Collector-Emitter Voltage Vcro -100 Vv To 3 4 pa pips T 0.6+0.3/-0.1 Emitter-Base Voltage Vigo -5 Vv 1. BASE 2. COLLECTOR Collector Current Ic -25 A 3. EMITTER Base Current Iz -5.0 A TO3P (N) Collector Power Dissipation Pe 195 Ww (Te=25C) c Junction Temperature Tj 150 Cc Storage Temperature Range Tstg -55 ~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. | UNIT Collector Cut-off Current Icno Vcn=-l00V, In=0 - - -10 LA Emitter Cut-off Current Teno Ven=-5V, Ic=0 - - -10 LA Collector-Emitter _- _ _ _ _ Breakdown Voltage Vinpicro Ies-50mA, In=0 100 Vv a . Ver=-5V, [c=-1.5A 55 - 160 DC Current Gain ote hire 2 Vcr=-4V, Ic=-15A 15 - - Collector-Emitter Verisav Ics"15A, In=- LSA 7 7 18 Vv Saturation Voltage Versa) 2 | Te=-25A, Ip=-5A - - -4.0 Base-Emitter Voltage Vee Vcr=-5V, Ic=-bA - - -1.5 Vv Transition Frequency fr Vcr=-5V, Ic=-1A 3.0 - - MHz Note : hrr Classification R:55~110 , O:80~160 1997. 6. 4 Revision No : 2 KEC 1/1