VS-10BQ030-M3
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 1Document Number: 95738
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ030-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMB
IF(AV) 1.0 A
VR30 V
VF at IF0.420 V
IRM max. 15 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 3.0 mJ
Cathode Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 30 V
IFSM tp = 5 ms sine 430 A
VF1.0 Apk, TJ = 125 °C 0.30 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ030-M3 UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 106 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
430
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-10BQ030-M3
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 2Document Number: 95738
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
1 A TJ = 25 °C 0.420
V
2 A 0.470
1 A TJ = 125 °C 0.300
2 A 0.370
Maximum reverse leakage current IRM (1)
TJ = 25 °C
VR = Rated VR
0.5
mATJ = 100 °C 5.0
TJ = 125 °C 15
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ (1), TStg -55 to +150 °C
Maximum thermal resistance,
junction to lead RthJL (2) DC operation 25
°C/W
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (similar DO-214AA) 1E
dPtot
dTJ
------------- 1
RthJA
--------------<
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0
0.1
0.2 0.4 0.6 0.8
TJ = 25 °C
TJ = 125 °C
10
0.01
0.001
VR - Reverse Voltage (V)
IR - Reverse Current (mA)
0
0.0001
3010 20
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
1
VS-10BQ030-M3
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 3Document Number: 95738
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
302010
TJ = 25 °C
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
90
100
110
120
130
0 0.4 0.8 1.2 1.6
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
80 % rated VR applied
IF(AV) - Average Forward Current (A)
Average Power Loss (W)
0
0.2
0.4
0.5
00.4 0.8 1.2 1.6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
0.1
0.3
tp - Square Wave Pulse Duration (µs)
100
1000
IFSM - Non-Repetitive Surge Current (A)
10 100 1000 10 000
10
At any rated load condition and
with rated VRRM applied
following surge
VS-10BQ030-M3
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 4Document Number: 95738
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10BQ030-M3/5BT 5BT 3200 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95401
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
2- Current rating
3- B = single lead diode
4- Q = Schottky “Q” series
5- Voltage rating (030 = 30 V)
6-Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
Device code
51 32 4 6
VS- 10 B Q 030 -M3
1- Vishay Semiconductors product
Document Number: 95401 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SMB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in inches (millimeters)
Cathode band
DO-214AA (SMB)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 (5.59) REF.
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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