©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW94/A/B/C
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDW94
: BDW94A
: BDW94B
: BDW94C
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage: BDW94
: BDW94A
: BDW94B
: BDW94C
- 45
- 60
- 80
- 100
V
V
V
V
IC Collector Current (DC) - 12 A
ICP *Collector Current (Pulse) - 15 A
IB Base Current - 0.2 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temper ature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
BDW94/A/B/C
Power Linear and Switching Applications
• Power Darlington TR
• Complement to BDW93, BDW93A, BDW93B and BDW93C respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW94/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collect or-Emitter Sust aini ng Voltage
: BDW94
: BDW94A
: BDW94B
: BDW94C
IC = - 100mA, IB = 0 - 45
- 60
- 80
- 100
V
V
V
V
ICBO Collector Cut-off Current: BDW94
: BDW94A
: BDW94B
: BDW94C
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 100
- 100
- 100
- 100
µA
µA
µA
µA
ICEO Collector Cut-off Current: BDW94
: BDW94A
: BDW94B
: BDW94C
VCE = - 45V, IB = 0
VCE = - 60V, IB = 0
VCE = - 80V, IB = 0
VCE = - 100V, IB = 0
-1
- 1
- 1
- 1
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 mA
hFE * DC Current Gain VCE = - 3V, IC = -3A
VCE = - 3V, IC = - 5A
VCE = - 3V, IC = - 10A
1000
750
100 20000
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 20mA
IC = - 10A, IB = - 100 mA - 2
- 3 V
V
VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 20mA
IC = - 10A, IB = - 100 mA - 2.5
- 4 V
V
VF* Parallel Diode Forward V oltage IF = - 5A
IF = -1 0A - 1.3
- 1.8 - 2
- 4 V
V
©2000 Fairchild Semiconductor International
BDW94/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC Curren t Gain Figure 2 . C o llector -Emitter Sa turation Volta ge
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0.1 -1 -10 -100
100
1k
10k
100k
VCE = -3V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.1
-1
-10
IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
-0.0 -0.8 -1.6 -2.4 -3.2 -4.0
-0
-4
-8
-12
-16
-20
VCE= -3V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000 f=1MHz
IE=0
Cob[pF], CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
-0.1
-1
-10
-100
BDW94C
BDW94B
BDW94A
BDW94
DC
IC MAX. 5 ms 1 ms 100uS
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR EM ITT ER VOL TA G E
0 50 100 150 200 250
0
20
40
60
80
100
120
PD [W], POWER DISSIPATION
Tc [oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW94/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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