DSEI2X31-10P - IXYS - Pdf.Support

DSEI 2x31-10P

20070731a

Symbol Conditions Maximum Ratings (per diode)

IFRMS TVJ = TVJM 70 A

IFAVM

① TC = 50°C; rectangular; d = 0.5 30 A

IFRM tP < 10 µs; rep. rating; pulse width limited by TVJM 375 A

IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A

TVJ -40...+150 °C

TVJM 150 °C

Tstg -40...+150 °C

Ptot TC = 25°C 100 W

VISOL 50/60 Hz, RMS t = 1 min 2500 V~

IISOL ≤ 1 mA t = 1 s 3000 V~

MdMounting torque (M4) 1.5 - 2.0 Nm

14 - 18 lb.in.

Weight 18 g

Symbol Conditions Characteristic Values (per diode)

typ. max.

IRTVJ = 25°CV

R= VRRM 750 µA

TVJ = 25°CV

R= 0.8 • VRRM 250 µA

TVJ = 125°CV

R= 0.8 • VRRM 7mA

VFIF = 30 A; TVJ = 150°C2.0V

TVJ = 25°C2.4V

VT0 For power-loss calculations only 1.5 V

rTTVJ = TVJM 12.5 mΩ

RthJC 1.25 K/W

RthCK 0.05 K/W

trr IF = 1 A; -di/dt = 100 A/µs 35 50 ns

VR = 30 V; TVJ = 25°C

IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs 16 18 A

L ≤ 0.05 µH; TVJ = 100°C

dSCreeping distance on surface min. 11.2 mm

dACreeping distance in air min. 11.2 mm

aAllowable acceleration max. 50 m/s²

IFAVM = 2x30 A

VRRM = 1000 V

trr = 35 ns

① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5

Data according to IEC 60747

Features

• 2 independent FRED in 1 package

• Isolation voltage 3000 V~

• Planar passivated chips

• Leads suitable for PC board soldering

• Very short recovery time

• Soft recovery behaviour

Applications

• Antiparallel diode for high frequency

switching devices

• Anti saturation diode

• Snubber diode

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating and melting

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power

cycling capability

• Low noise switching

• Small and light weight

VRSM VRRM Type

V V

1000 1000 DSEI 2x 31-10P

IXYS reserves the right to change limits, test conditions and dimensions

Fast Recovery

Epitaxial Diode (FRED)

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DSEI 2x31-10P

20070731a

Dimensions in mm (1mm = 0.0394“)

Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus

versus voltage drop. -diF/dt.

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage

junction temperature. versus diF/dt.

Fig. 7 Transient thermal impedance junction to case.

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