MJD112-1 - ON Semiconductor

Motorola Bipolar Power Transistor Device Data

 

 

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages

in applications such as switching regulators, converters, and power amplifiers.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

•Surface Mount Replacements for TIP110–TIP117 Series

•Monolithic Construction With Built–in Base–Emitter Shunt Resistors

•High DC Current Gain — hFE = 2500 (Typ) @ IC = 2.0 Adc

•Complementary Pairs Simplifies Designs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

MJD112

MJD117

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

1.75

0.014

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient*

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

71.4

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎ

mAdc

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%. (continued)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD112/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

*Motorola Preferred Device

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





 

REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS — continued (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS – continued

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Cutoff Current

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Cutoff Current (VCB = 80 Vdc, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.5 Adc, VCE = 3 Vdc)

(IC = 2 Adc, VCE = 3 Vdc)

(IC = 4 Adc, VCE = 3 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

500

1000

200

ÎÎÎÎ

—

12,000

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 8 mAdc)

(IC = 4 Adc, IB = 40 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD117

MJD112

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

200

100

ÎÎÎ

*Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

0.04 0.2 40.1

0.06 0.6 1

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V

IC/IB = 250

t, TIME ( s)

0.8

0.6

0.4

0.2

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

APPROX

+8 V 0

≈

8 k

SCOPE

VCC

–30 V

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

tr, tf

≤

10 ns

DUTY CYCLE = 1%

+ 4 V

td @ VBE(off) = 0 V

PNP

NPN

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

APPROX

–12 V

TUT

≈

0.4 2

IB1 = IB2

TJ = 25

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

 

Motorola Bipolar Power Transistor Device Data

Figure 3. Thermal Response

t, TIME OR PULSE WIDTH (ms)

0.01 1000

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT

JC(t) = r(t) R

JC = 6.25

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.01

THERMAL RESISTANCE (NORMALIZED)

0.7

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.01

IC, COLLECTOR CURRENT (AMP)

Figure 4. Maximum Rated Forward Biased

Safe Operating Area Figure 5. Power Derating

2VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.3

100

0.5

0.2 BONDING WIRE LIMITED

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

5 203

TJ = 150

CURVES APPLY BELOW RATED VCEO

100

1 ms dc

0.1

107 30

25 T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

SURFACE

MOUNT

0.7 5 ms

50 70 200

500

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150

C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

Cib

0.04

1 4 10 40

TC = 25

200

100

0.1 2 6 20

20 PNP

NPN

0.60.40.20.06

Figure 6. Capacitance

Cob

 

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

NPN MJD112 PNP MJD117

Figure 7. DC Current Gain

Figure 8. Collector Saturation Region

Figure 9. “On Voltages

0.04 IC, COLLECTOR CURRENT (AMP)

300 0.06 0.2

2 k

800

4 k

hFE, DC CURRENT GAIN

VCE = 3 V

TJ = 125

3 k

0.1 0.6

–55

1 k

0.4 1

6 k

400

600

2 4 0.04

300 0.06 0.2

2 k

800

4 k

hFE, DC CURRENT GAIN

3 k

0.1 0.6

–55

1 k

0.4 1

6 k

400

600

2 4

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.60.1 0.2 0.5 102 5

IC =

0.5 A 1 A

0.04 IC, COLLECTOR CURRENT (AMP)

1.4

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

TJ = 25

VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V

VCE(sat) @ IC/IB = 250

0.06 0.2 20.1 0.60.4 1 4 0.04 IC, COLLECTOR CURRENT (AMP)

1.4

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

TJ = 25

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

0.06 0.2 20.1 0.60.4 1 4

20 50 100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.60.1 0.2 0.5 102 51

20 50 100

VBE @ VCE = 3 V

TC = 125

CVCE = 3 V

4 A

TJ = 125

2 A

TJ = 125

IC =

0.5 A 1 A 4 A2 A

TYPICAL ELECTRICAL CHARACTERISTICS

 

Motorola Bipolar Power Transistor Device Data

NPN MJD112 PNP MJD117

0.04 IC, COLLECTOR CURRENT (AMP)

0.06 0.2

0*APPLIED FOR IC/IB < hFE/3

0.1 0.6

–55

C TO 25

0.4 1

–4.8 2 4

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1 0–0.4

, COLLECTOR CURRENT ( A)

103

102

101

100

+0.2 +0.4 +0.6

TJ = 150

100

REVERSE FORWARD

VCE = 30 V

105

–0.6 –0.2 +0.8 +1 +1.2 +1.4

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1 0+0.4

, COLLECTOR CURRENT ( A)

103

102

101

100

–0.2 –0.4 –0.6

105

+0.6 +0.2 –0.8 –1 –1.2 –1.4

+0.8

–4

–3.2

–2.4

–1.6

–0.8

VC FOR VBE

C TO 150

VC FOR VCE(sat)

0.04 IC, COLLECTOR CURRENT (AMP)

0.06 0.20.1 0.60.4 1 2 4

Figure 10. Temperature Coefficients

Figure 11. Collector Cut–Off Region

Figure 12. Darlington Schematic

BASE

EMITTER

COLLECTOR

≈

8 k

≈

120

PNP

BASE

EMITTER

COLLECTOR

≈

8 k

≈

120

NPN

–4.8

+0.8

–4

–3.2

–2.4

–1.6

–0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

–55

C TO 25

*APPLIES FOR IC/IB < hFE/3

VC FOR VCE(sat)

VB FOR VBE

C TO 150

–55

C TO 25

C TO 150

–55

C TO 25

VCE = 30 V

REVERSE FORWARD

TJ = 150

100

 

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

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MJD112/D

*MJD112/D*

◊