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SENSITRON
SEMICONDUCTOR
• 221 West Industry Court ! Deer Par k, NY 11729- 4681 ! (631) 586-7600 FAX ( 631) 242- 9798 •
• World Wi de Web Si te - http ://www.s en si tro n.c om • E-Mail Address - sales@sensitron. com •
Data Sheet 2662, Rev. -
50V DC
Approx
50 NI (Non-inductive)Ω10 NIΩ
1.0
NI
ΩOscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
t
rr
Settimebasefor5/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0
300
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
8.3 ms single half-sine-wave
JEDEC method
100
200
10
100
400
0.1 1.0 10 100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
f = 1.0MHz
j
°
HER3001PT -
HER3005PT
0
6
12
050100150
I,AVERAGEFORWARDCURRENT(A)
(AV)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
18
24
30
0.1
1.0
10
100
0 0.5 1.0 1.5
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
Pulse width = 300 s
2% duty cycle µ
3001PT -3004PT
3005PT
3006PT -3008PT
HER3006PT -
HER3008PT
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court ! Deer Par k, NY 11729- 4681 ! (631) 586-7600 FAX ( 631) 242- 9798 •
• World Wi de Web Si te - http ://www.s en si tro n.c om • E-Mail Address - sales@sensitron. com •
Data Sheet 2662, Rev. -
