VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
P
WER RE
TIFIER
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2007
10-03-2007 REV B
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6073 thru 1N6081
1N6073 thru 1N6081
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/503 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industr y-rec ognized 3, 6, a nd 12 Am p rat ed r ectifiers (TL =70ºC) in
different package sizes for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I”
metallurgical bond. These devices are also available in surface mount MELF
package configurations by adding a “US” suffix (see separate data sheet for
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier
products to meet higher and lo wer current ratings with various recovery time spee d
requirements including stand ard, fast and u ltrafast device types in both through-ho le
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N6073 to 1N6081 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available for 1N6074 and
1N6075 per MIL-PRF-19500/503
• Further options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or SP prefix respectively , e.g.
MX6076, MV6079, SP6081, etc.
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix
• Ultrafast recovery rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +155oC
• Storage Temperature: -65oC to +155oC
• Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073-6075, 75 Amps for 1N60 76-6078, and 175
Amps for 1N6079-6081 at 8.3 ms half-sine wave
• Average Rectified For ward Current (IO) at TL= +70oC
(L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified For ward Current (IO) at TA=55oC:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
• Thermal Resistance L= 0 inch (RθJL): 13oC/W for
1N6073-6075, 8.5oC/W for 1N6076-6078, and
5.0oC/W for 1N6079-6081
• Solder temperature: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 1N6073 thru 1N6075: 340 mg
1N6076 thru 1N6078: 750 mg
1N6079 thru 1N6081: 1270 mg
• See package dimensions on l ast page