ON Semiconductor 2N4921 thru 2N4923 * Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: *ON Semiconductor Preferred Device * Low Saturation Voltage -- * * * * 1 AMPERE GENERAL-PURPOSE POWER TRANSISTORS 40-80 VOLTS 30 WATTS VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction -- PD = 30 W @ TC = 25C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to PNP 2N4918, 2N4919, 2N4920 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III III IIII III IIIIIIIIIII IIII III III IIII III IIIIIIIIIII IIII IIIIIIII III III III IIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III *MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N4921 2N4922 2N4923 Unit VCEO 40 60 80 Vdc Collector-Base Voltage VCB 40 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous (1) IC 1.0 3.0 Adc Base Current -- Continuous IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 30 0.24 Watts W/C TJ, Tstg -65 to +150 C Operating & Storage Junction Temperature Range 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Case Symbol Max Unit JC 4.16 C/W (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). (2) Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: 2N4921/D 2N4921 thru 2N4923 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. http://onsemi.com 2 2N4921 thru 2N4923 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 -- -- -- -- -- -- 0.5 0.5 0.5 -- -- 0.1 0.5 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (3) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N4921 2N4922 2N4923 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Vdc ICEO mAdc 2N4921 2N4922 2N4923 Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125C ICEX mAdc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO -- 0.1 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO -- 1.0 mAdc 40 30 10 -- 150 -- ON CHARACTERISTICS DC Current Gain (3) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (3) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) -- 0.6 Vdc Base-Emitter Saturation Voltage (3) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) -- 1.3 Vdc Base-Emitter On Voltage (3) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) -- 1.3 Vdc fT 3.0 -- MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob -- 100 pF Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 -- -- (3) Pulse Test: PW 300 s, Duty Cycle 2.0%. *Indicates JEDEC Registered Data. APPROX +11 V Vin TURN-ON PULSE 5.0 t1 VCC 2.0 RB Cjd<<Ceb APPROX +11 V t3 SCOPE Vin APPROX 9.0 V t2 TURN-OFF PULSE -4.0 V t1 15 ns 100 < t2 500 s t3 15 ns t, TIME (s) Vin VBE(off) VCC = 30 V IC/IB = 20 3.0 RC 1.0 0.7 0.5 0.3 0.2 0.1 DUTY CYCLE 2.0% 0.07 RB and RC varied to 0.05 obtain desired current levels IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C VCC = 60 V td VCC = 30 V tr VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 Figure 2. Switching Time Equivalent Circuit 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time http://onsemi.com 3 500 700 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4921 thru 2N4923 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 P(pk) JC(t) = r(t) JC JC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 5.0 ms 3.0 2.0 TJ = 150C 1.0 0.7 0.5 0.3 0.2 0.1 1.0 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active-Region Safe Operating Area 5.0 5.0 3.0 1.0 0.7 0.5 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 IC/IB = 20 TJ = 25C TJ = 150C IB1 = IB2 ts = ts - 1/8 tf 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 20 2.0 t f , FALL TIME (s) t s, STORAGE TIME (s) 3.0 IC/IB = 20 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 500 700 1000 IC/IB = 10 10 Figure 6. Storage Time 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 7. Fall Time http://onsemi.com 4 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 500 700 1000 1000 700 500 VCE = 1.0 V 300 200 hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N4921 thru 2N4923 TJ = 150C 100 70 50 25C -55C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 0.8 108 1.0 A TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 1.5 IC = 10 x ICES VCE = 30 V TJ = 25C 107 1.2 IC = 2 x ICES VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.5 A Figure 9. Collector Saturation Region 106 IC ICES 105 ICES VALUES OBTAINED FROM FIGURE 12 104 0 30 0.9 0.6 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.3 60 90 120 VCE(sat) @ IC/IB = 10 0 2.0 3.0 5.0 10 20 30 50 150 100 200 300 500 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 104 TJ = 150C 103 100C 102 25C 101 IC = ICES 100 VCE = 30 V 10-1 10-2 -0.2 1000 2000 +2.5 REVERSE -0.1 FORWARD 0 +0.1 +0.2 +0.3 +0.4 TEMPERATURE COEFFICIENTS (mV/ C) IC, COLLECTOR CURRENT (A) 0.25 A 0.6 Figure 8. Current Gain 103 IC = 0.1 A +2.0 *APPLIES FOR IC/IB +1.5 +1.0 TJ = 100C to 150C +0.5 *VC FOR VCE(sat) 0 -55C to +100C -0.5 -1.0 -1.5 VB FOR VBE -2.0 -2.5 2.0 3.0 5.0 +0.5 hFE@VCE 1.0V 2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 1000 2000 2N4921 thru 2N4923 PACKAGE DIMENSIONS CASE 77-08 TO-225AA TYPE ISSUE V -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- 2N4921 thru 2N4923 Notes http://onsemi.com 7 2N4921 thru 2N4923 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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