© by SEMIKRON 0898 B 6 – 27
Absolute Maximum Ratings Values
Symbol Conditions 1) Units
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, Tstg
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/70 °C
Tcase = 25/70 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
600
600
130 / 100
150 / 150
± 20
450
–40 ... +150 (125)
2500
Class F
40/125/56
V
V
A
A
V
W
°C
V
Inverse Diode
IF = –IC
IFM = –ICM
IFSM
I2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
100 / 75
260 / 200
720
2600
A
A
A
A2s
Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
g
fs
VGE = 0, IC = 3 mA
VGE = VCE, IC = 2 mA
VGE = 0 Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 75 A VGE = 15 V;
IC = 100 A Tj = 25 (125) °C
VCE = 20 V, IC = 100 A
≥ VCES
4,5
–
–
–
–
–
30
–
5,5
0,2
5
–
1,8(2,0)
2,1(2,4)
–
–
6,5
3
–
200
–
2,5(2,8)
–
V
V
mA
mA
nA
V
V
S
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
–
–
–
–
–
–
5600
600
400
–
350
–
–
–
60
pF
pF
pF
pF
nH
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 300 V
VGE = –15 V / +15 V3)
IC = 100 A, ind. load
RGon = RGoff = 1 0 Ω
Tj = 125 °C
–
–
–
–
–
–
50
40
300
35
4
3
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
Inverse Diode 8)
VF = VEC
VF = VEC
VTO
rt
IRRM
Qrr
IF = 75 A VGE = 0 V;
IF = 100A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 100 A; Tj = 125 °C2)
IF = 100 A; Tj = 125 °C2)
–
–
–
–
–
–
1,45(1,35)
1,55(1,55)
–
8
44
6,0
1,7
1,9
0,9
11
–
–
V
V
V
mΩ
A
µC
Thermal character isti c s
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
–
–
–
–
–
–
0,27
0,6
0,05
°C/W
°C/W
°C/W
SEMITRANS® Sixpack
Superfast IGBT Modules
SKM 10 0 GD 063 DL *)
Features
•MOS input (volta
g
e control led )
•N channel, homo
g
eneous
Si-structure (NPT-IGBT)
•Hi
g
h short circuit capability,
self limitin
g
to 6 * Icnom
•Fast & soft invese CAL diodes 8)
•Isolated copper baseplate usin
g
DCB Direct Copper Bondin
g
Technolo
g
y without hard mould
•Lar
g
e clearance (9 mm) and
creepa
g
e distances (13 mm)
Typical Applications
•Switched mode power supplies
•Three phase inverters for
AC motor speed control
•Pulse frequencies also above
10 kHz
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 300 V,
–diF/dt = 1000 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
8) CAL = Controlled Axial Lifetime
Technolo
g
y.
Cases and mech. data → B 6 – 32
Sixpack
*) Main terminals round 2 mm dia
GD
Sixpack
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© by SEMIKRONB 6 – 28
SKM 100 GD 063 D ...
0898
M100GD06.XLS-1
0
100
200
300
400
500
0 20 40 60 80 100 120 140 160
T
C
°C
P
tot
W
M100GD06.XLS-6
0
2
4
6
8
10
12
0 100 200 300 400 500 600 700
V
CE
V
I
CSC
/I
C
all owed num bers of
s ho rt cir cui ts: <1 000
t i me between sh ort
circ uits: >1s
di/dt= 300 A/ µs
900 A/µs
1500 A/µs
M100GD06.XLS-5
0
0,5
1
1,5
2
2,5
0 100 200 300 400 500 600 700
V
CE
V
I
Cpuls
/I
C
M100GD06.XLS-4
0,1
1
10
100
1000
1 10 100 1000 10000
V
CE
V
I
C
At
p
=22µs
100µs
1ms
10ms
M100GD06.XLS-3
0
2
4
6
8
10
12
0 10203040506070
R
G
Ω
E
mWs
E
on
E
off
M100GD06.XLS-2
0
2
4
6
8
10
12
0 40 80 120 160 200 240
I
C
A
E
mWs
E
on
E
off
Fi
g
. 3 Turn-on /-off ener
g
y = f (R
G
)Fi
g
. 4 Maximum safe operatin
g
area (SOA) I
C
= f (V
CE
)
Fi
g
. 1 Rated power dissipa tion P
tot
= f (T
C
)Fi
g
. 2 Turn-on /-off ener
g
y = f (I
C
)
Fi
g
. 5 Turn-off safe operat in
g
area (RBSOA) Fi
g
. 6 Safe operatin
g
area at short circuit I
C
= f (V
CE
)
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
R
G
= 10 Ω
1 pulse
T
C
= 25 °C
T
j
≤
150 °C
T
j
≤
150 °C
V
GE
= ± 15 V
t
sc
≤
10 µs
L < 50 nH
I
C
= 100 A
T
j
≤
150 °C
V
GE
= ± 15 V
R
Goff
= 10
Ω
I
C
= 100 A
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
I
C
= 100 A
Not fo r
linear use
http://store.iiic.cc/
© by SEMIKRON B 6 – 290898
M100GD06.XLS-12
0
25
50
75
100
125
150
175
200
02468101214
V
G
E
V
I
C
A
M100GD06.XLS-10
0
25
50
75
100
125
150
175
200
012345
V
CE
V
I
C
A
17V
15V
13V
11V
9V
7V
M100GD06.X LS-9
0
25
50
75
100
125
150
175
200
012345
V
CE
V
I
C
A17V
15V
13V
11V
9V
7V
M100GD06.XLS-8
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
T
C
°C
I
C
A
P
cond(t)
= V
CEsat(t)
· I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
· I
C(t)
V
CE(TO)(Tj)
≤ 1,2 – 0,001 (T
j
–25) [V]
typ .: r
CE(Tj)
= 0,0090 + 0,00004 (T
j
–25) [
Ω
]
max.: r
CE(Tj)
= 0,013 + 0,00004 (T
j
–25) [
Ω
]
valid for V
GE
= + 15 [V]; I
C
≥
0,3 I
Cn
Fi
g
. 9 Typ. output charact eristic, t
p
= 250 µs; T
j
= 25 °C Fi
g
. 10 Typ. output char act eristic, t
p
= 250 µs; T
j
= 125 °C
Fi
g
. 8 Rated current vs. temperature I
C
= f (T
C
)
+2
–1
Fi
g
. 11 Saturation characteristic (IGBT)
Calculation elements and equations Fi
g
. 12 Typ. transfer characte ristic, t
p
= 250 µs; V
CE
= 20 V
T
j
= 150 °C
V
GE
≥
15V
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© by SEMIKRONB 6 – 30
SKM 100 GD 063 D...
0898
M100GD06.XLS-18
0
0,4
0,8
1,2
1,6
2
0 20 40 60 80 100 120
I
F
A
E
offD
mJ
40 Ω
20 Ω
80 Ω
12 Ω
R
G
=7 Ω
M100GD06.XLS-17
0
20
40
60
80
100
0 0,4 0,8 1,2 1,6 2
V
F
V
I
F
A
T
j
= 1 25°C, typ.
T
j
= 25°C, t y p.
T
j
= 1 25°C, m a x.
T
j
=25°C, max .
M100GD06.XLS-16
10
100
1000
0 10203040506070
R
G
Ω
t
ns
t
doff
t
don
t
r
t
f
M100GD06.XLS-15
10
100
1000
0 50 100 150 200 250
I
C
A
t
ns
t
doff
t
don
t
r
t
f
M100GD06.XLS-14
0,1
1
10
100
0102030
V
CE
V
C
nF
C
ies
C
oes
C
res
M100GD06.XLS-13
0
2
4
6
8
10
12
14
16
18
20
0 40 80 120 160 200 240 280 320
Q
Gate
nC
V
GE
V
100V
300V
Fi
g
. 13 Typ.
g
ate char
g
e characteristic Fi
g
. 14 Typ. capacitances vs.V
CE
V
GE
= 0 V
f = 1 MH z
Fi
g
. 15 Typ. switchin
g
times vs. I
C
Fi
g
. 16 Typ. switch in
g
times vs.
g
ate resist or R
G
Fi
g
. 17 Typ. CAL diode forward char acteristic Fi
g
. 18 Diode turn-off ener
g
y dissipation per pulse
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
I
C
= 100 A
induct. load
I
Cpuls
= 100 A
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
R
Gon
= 10
Ω
R
Goff
= 10
Ω
induct. load
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
http://store.iiic.cc/
© by SEMIKRON B 6 – 310898
M100GD06.XLS-24
0
1
2
3
4
5
6
7
8
9
0 1000 2000 3000 4000 5000 6000
di
F
/dt A/µs
Q
rr
µC I
F
=
75 A
50 A
38 A
25 A
40 Ω
20 Ω
80 Ω
12 Ω R
G
=7 Ω 100 A
M100GD06.XLS-23
0
20
40
60
80
100
120
140
0 1000 2000 3000 4000 5000
di
F
/dt A/µs
I
RR
A
40 Ω
20 Ω
80 Ω
12 Ω
R
G
=7 Ω
M100GD06.XLS-22
0
20
40
60
80
100
120
140
0 20406080100120
I
F
A
I
RR
A
40 Ω
20 Ω
80 Ω
12 Ω
R
G=
7 Ω
M100GD06.XLS-20
0,0001
0,001
0,01
0,1
1
0,00001 0,0001 0,001 0,01 0,1 1
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
s ing le pul se
t
p
M100GD06.XLS-19
0,0001
0,001
0,01
0,1
1
0,00001 0,0001 0,001 0,01 0,1 1
t
p
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
s ing le pul se
Fi
g
. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f Fi
g
. 20 Transient thermal impedance of
inverse CAL diodes Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f
Fi
g
. 22 Typ. CAL diode peak reverse recov e ry
current I
RR
= f (I
F
; R
G
)Fi
g
. 23 Typ. CAL diode peak reverse
recovery current I
RR
= f (di/ dt )
Fi
g
. 24 Typ. CAL diode recovered char
g
e
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
I
F
= 75 A
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
http://store.iiic.cc/
© by SEMIKRONB 6 – 32
SKM 100 GD 063 D...
0898
SEMITRANS
®
Sixpack
Case D 68
UL Recognize d
File no. E 63 532
SKM 100 GD 063 DL
Dimensions in mm
Case outline and circuit diagram
Mechanical Data
Symbol Conditions Values Units
min. typ. max.
M
1
a
w
to heatsink, SI Units (M5)
to heatsink, US Units 4
35
–
–
–
–
–
–
5
44
5x9,81
175
Nm
lb.in.
m/s
2
g
This is an electrost atic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Two devices are supplied in one
SEMIB O X A.
Larger packing units (for 10 and 20
pieces) are used if suitable
SEMIBOX
→
C - 1.
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