© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 3
Publication Order Number:
BC807−25W/D
1
BC807-25W, SBC807-25W,
BC807-40W, SBC807-40W
General Purpose
Transistors
PNP Silicon
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO −45 V
Collector − Base Voltage VCBO −50 V
Emitter − Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
PD
460 mW
Thermal Resistance,
Junction−to−Ambient
RqJA 272 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Board, 1 oz. Cu, 100 mm2.
SC−70
CASE 419
STYLE 3
1
2
3
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
5x M G
G
5x = Device Code
x = B or C
M = Date Code*
G=Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO −45 − − V
Collector−Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES −50 − − V
Emitter−Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO −5.0 − − V
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
−
−
−
−
−100
−5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC807−25, SBC807−25
BC807−40, SBC807−40
(IC = −500 mA, VCE = −1.0 V)
hFE
160
250
40
−
−
−
400
600
−
−
Collector−Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat) − − −0.7 V
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
VBE(on) − − −1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo −10 −pF
ORDERING INFORMATION
Device Specific Marking Package Shipping†
BC807−25WT1G
5B SC−70
(Pb−Free)
3000 / Tape & Reel
SBC807−25T1G
BC807−25WT3G 10,000 / Tape & Reel
BC807−40WT1G
5C SC−70
(Pb−Free)
3000 / Tape & Reel
SBC807−40WT1G
BC807−40WT3G 10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
3
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
IC, COLLECTOR CURRENT (A)
10001010.1
10
100
fT
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
4
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 8. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
5
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
200
400
600
800
1000
10.10.010.001
0.01
0.1
1
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (A)
10001010.1
10
100
fT
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
100
300
500
700
900
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
6
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
IB, BASE CURRENT (mA)
Figure 14. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 16. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
7
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
Figure 17. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Thermal Limit
100 mS
1 S
10 mS
1 mS
1000
0.01 0.1 1 10 100 1000
10
D = 0.5
Rthja(t), TRANSIENT THERMAL RESPONSE (°C/W)
Figure 18. Thermal Response
0.2
0.1
0.05
0.02
0.01
Single Pulse
t, PULSE TIME (s)
1
0.00001 0.0001 0.0010.000001
100
BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
http://onsemi.com
8
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
BC807−25W/D
PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
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