MD5000, A, B (siicon) Dual PNP silicon annular transistors designed for ultra-high frequency oscillator and amplifier appli- cations and for differential-amplifier applications re- quiring a matched pair oftransistors with a highdegree of parameter uniformity under varying environmental conditions. CASE 654-04 PINS 4 AND 8 OMITTED Pin Connections, Bottom View All Leads Electrically !solated from Case MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage Vcro 15 Vde Collector-Base Voltage Vos 20 Vde Emitter-Base Voltage VEB 5.0 Vde Collector Current Io 50 mAdc Operating and Storage Junction Ty, Tstg -65 to +200 C Temperature Range One Both Side Sides Total Device Dissipation@ T , =25C Pp 300 400 mW Derate above 25C 1.7 2.3 mW/C 231MD5000, A, B (Continued) ELECTRICAL CHARACTERISTICS (each side) 1(Ta = 25C uniess otherwise noted) [ Characteristic L Symbt | min | Typ [max [unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BYcEo Vde (Ig = 3 mAdc, Ig = 0) 15 _ Collector-Base Breakdown Voltage BYcpo Vde (Ig = 10 uAde, Ip = 0) 20 - - Emitter-Base Breakdown Voltage BYVERO Vde (Ig = 10uAde, Ic * 0) 5.0 ~ _ Collector Cutoff Current IcBo wuAdc (Wop = 18 Vde, Ig = 0) _ 0.010 | (Vop = 15 Vde, Ig= 0, Ty = 150C) ~ I _ 1.0 ON CHARACTERISTICS DC Current Gain bre : ~ (ig = 3 mAde, Vog = 1 Vde) 20 50 _ Collector-Emitter Saturation Voltage Voxr(sat) Vde (ig = 10 mAdc, ly = 1 mAdc) _ ~ 0.4 Base-Emitter Saturation Voltage VBE(sat) Vde (Ig = 10 mAdc, Ig = 1 mAde) ~ _ 1.0 DYNAMIC CHARACTERISTICS Current-GainBandwidth Product ty MHz (ig = 4mAde, Vop = 10 Vde, f = 100 MHz) 600 900 _ Output Capacitance Cop pF (Vop = 10 Vde, Ip = 0, f= 140 kHz) _ - 1.7 Input Capacitance Cin pF (Vpg = 0.5 Vdc, Ig = 0,f = 140 kHz) =- - 2.0 Noise Figure NF dB (ic = l mAdc, Vor = 6 Vde, f = 60 MHz, Rg = 400 ohms) _ 3.0 6.0 FUNCTIONAL TEST Amplifier Power Gain Gye dB (Ig = 6 mAde, Vog = 12 Vdc, Rg = Ry = 50 ohms, f = 200 MHz) 15 20 _ MATCHING CHARACTERISTICS DC Current Gain Ratio* hppy/bpee _ (Ig = 4 mAde, Vog * 10 Vde) MD5000 _ 0.7 _ MD5000A 0.9 _ 1.0 MD5000B 0.8 _ ro Base Voltage Differential \Ype1 - VpeE2| mvVdc (ig = 4 mAdc, Vog = 10 Vde) MD5000 _ 5.0 _ MDS5000A _ _ 5.0 MD5000B - - 10 Base Voltage Differential Change sVBE1 - Vpg2) pv /c (ic = 4 mAde, Veg = 10 Vde, Ta = -55 to +125C) MD5000 nr _ 10 - MD50C0A A _ _ 10 { MDS000B = 20 *The lowest hyp reading is taken as hep, for this ratio. 232