TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. * * * * * * * 8A, 800V, RDS(on) = 1.55 @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D ! G! G DS TO-220 Absolute Maximum Ratings Symbol VDSS ID TO-220F GD S FQP Series FQPF Series ! S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQP8N80C FQPF8N80C 800 - Continuous (TC = 100C) Units V 8 8* A 5.1 5.1 * A 32 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 17.8 4.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) 32 (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 30 V 850 mJ 178 1.43 59 0.48 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2009 Fairchild Semiconductor Corporation FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A FQP8N80C 0.7 1 FQPF8N80C 2.1 Units C/W www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET January 2009 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 800 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.5 IDSS IGSSF IGSSR VDS = 800 V, VGS = 0 V -- -- 10 A VDS = 640 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.29 1.55 -- 5.6 -- S -- 1580 2050 pF -- 135 175 pF -- 13 17 pF Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A gFS Forward Transconductance VDS = 50 V, ID = 4 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 400 V, ID = 8 A, RG = 25 (Note 4, 5) VDS = 640 V, ID = 8 A, VGS = 10 V (Note 4, 5) -- 40 90 ns -- 110 230 ns -- 65 140 ns -- 70 150 ns -- 35 45 nC -- 10 -- nC -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A ISM -- -- 32 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 690 -- ns Qrr Reverse Recovery Charge -- 8.2 -- C VGS = 0 V, IS = 8 A, dIF / dt = 100 A/s (Note 4) FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Electrical Characteristics Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 2 www.fairchildsemi.com VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 1 1 10 o 150 C ID, Drain Current [A] ID, Drain Current [A] 10 0 10 o -55 C o 25 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 Notes : 1. VDS = 50V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.0 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1 10 2.5 VGS = 10V VGS = 20V 2.0 0 10 1.5 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 1.0 -1 0 4 8 12 16 10 20 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2500 1.4 VDS = 160V VGS, Gate-Source Voltage [V] Coss 1000 VDS = 400V 10 1500 Capacitance [pF] 1.2 12 Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 0.8 VSD, Source-Drain voltage [V] FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Typical Characteristics VDS = 640V 8 6 4 2 Note : ID = 8A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 0 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 4.0 A 0.5 0.0 -100 200 0 100 150 200 o Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 2 100 s 1 ID, Drain Current [A] 10 ms 1 ms 10 ms 0 10 Notes : -1 10 100 s 1 DC 10 10 s 10 1 ms 0 Operation in This Area is Limited by R DS(on) 2 10 10 s 10 DC Notes : -1 10 o 1. TC = 25 C o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 -2 10 50 TJ, Junction Temperature [ C] 10 ID, Drain Current [A] -50 TJ, Junction Temperature [ C] o 0 1 10 2 10 10 3 10 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for FQPF8N80C Figure 9-1. Maximum Safe Operating Area for FQP8N80C FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Typical Characteristics 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 4 www.fairchildsemi.com 0 D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C ( t) = 0 .7 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 0 .0 2 JC (t), T h e r m a l R e s p o n s e 10 (Continued) 0 .0 1 s in g le p u l s e Z 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 10 D = 0 .5 0 N o te s : 1 . Z J C (t) = 2 .1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 0 .1 10 0 .0 5 -1 0 .0 2 0 .0 1 Z JC (t), T h e r m a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for FQP8N80C 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Typical Characteristics Figure 11-2. Transient Thermal Response Curve for FQPF8N80C FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 5 www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 5 www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) I SD ( DUT ) G S G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 6 www.fairchildsemi.com FDB037N06 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) I SD ( DUT ) G S G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 7 www.fairchildsemi.com TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 0.80 0.10 2.54TYP [2.54 0.20] +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 8 www.fairchildsemi.com FQP8N80C/FQPF8N80CFQPF8N80CYDTU 800V N-Channel MOSFET Package Dimensions (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) 15.87 0.20 (1.00x45) MAX1.47 0.80 0.10 ) 0 (3 9.75 0.30 15.80 0.20 6.68 0.20 (0.70) #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 9 www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Package Dimensions FQF8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 10 www.fairchildsemi.com FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A 11 www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.