SIEMENS BCR 166 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=4.7kQ, Ro=47kQ) VPSO5161 Type Marking |Ordering Code =| Pin Configuration Package BCR 166 WTs Q62702-C2339 1=B [2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Callector-emitter voltage VoEO 50 Vv Collector-base voltage VoBo 50 Emitter-base voltage VeRO 5 Input on Voitage Viton) 15 DC collector current Ie 100 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature T; 150 C Storage temperature Tetg - 65... + 150 Thermal Resistance Junction ambient Ringa $350 K/W Junction - soldering point Anis < 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / Gem? Cu Semiconductor Group 687 11.96SIEMENS BCR 166 Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. max. DC Characteristics Collector-emitter breakdown voltage Viericeo Vv Ig = 100 jIA, fg = 0 50 - - Collector-base breakdown voltage ViprycBo Io = 10 pA, p= 0 50 . - Collector cutoff current IcBo nA Vop = 40 V, ie =0 - - 100 Emitter cutoff current leBo pA Vep =5 Vic =0 - - 155 DC current gain hee - Ic=5mMA, Vog =5V 70 - - Collector-emitter saturation voltage 1) | Vcesat Vv Io = 10 MA, Ip =0.5 mA - - 0.3 Input off voltage Vicath) Io = 100 HA, Vog = 5 V 0.4 - 0.8 Input on Voltage Vicon) Io =2 MA, Voe = 0.3 V 0.5 - 1.4 Input resistor Ay 3.2 4.7 6.2 kQ2 Resistor ratio Ry/Ro 0.09 0.1 0.14 - AC Characteristics Transition frequency fr MHz fo = 10 MA, Veg =5 V, f= 100 MHz - 160 - Collector-base capacitance Cob pF Vopg = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300ps; D < 2% Semiconductor Group 688 11.96SIEMENS BCR 166 DC Current Gain hee = f (ic) Coltector-Emitter Saturation Voltage Voge = 5V (common emitter configuration) Vcesat = ic), Are = 20 102 104 10 10 10 10 mA 0.0 0.2 04 06 Vv 1.0 we |e Voces input on Voltage Vion) = f(/c) Input off voitage Voy = A/c) Vog = 0.3V (common emitter configuration) Voce = 5V (common emitter configuration) 0.0 0.2 04 06 v 1.0 Mion w Vion Semiconductor Group 689 11.96SIEMENS BCR 166 Total power dissipation FP, = f (7,4*: Ts) * Package mounted on epoxy 300 mw Pea | = . NN N \ : \ 50 Y ol] 0 20 40 60 80 100 120 C_150 i k'S Permissible Pulse Load Rinss = Ap) Permissible Pulse Load Piotmax / Proto = Ktp) o CTS a Hee SN a 0. 0, 0, 0. 0. 0. 0. nea 690 11.96 Semiconductor Group