© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ300 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 73 A
IDM TC= 25°C, pulse width limited by TJM 292 A
IAR TC= 25°C 73 A
EAR TC= 25°C 60mJ
EAS 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 300 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 45 m ΩΩ
ΩΩ
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
HiPerFETTM
Power MOSFETs
Q-Class
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
•IXYS advanced low Qg process
•Low gate charge and capacitances
- easier to drive
-faster switching
•Unclamped Inductive Switching (UIS)
rated
•Low RDS (on)
•Fast intrinsic diode
•International standard package
•miniBLOC with Aluminium nitride
isolation for low thermal resistance
•Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
•Molding epoxies meet UL 94 V-0
flammability classification
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Easy to mount
•Space savings
•High power density
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
DS98742B(1/04)
VDSS = 300 V
ID25 = 73 A
RDS(on) = 45 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
IXFN 73N30Q
Preliminary data sheet
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 73N30Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 30 55 S
Ciss 5400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 370 pF
td(on) 37 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 ns
td(off) RG = 1.0 Ω (External), 82 ns
tf12 ns
Qg(on) 195 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC
Qgd 82 nC
RthJC 0.22 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 73 A
ISM Repetitive; pulse width limited by TJM 292 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = 25A, -di/dt = 100 A/µs, VR = 100 V 0.8 µC
IRM 7A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
http://store.iiic.cc/
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
12 0
15 0
18 0
03691215
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
20
40
60
80
0 12345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
I
D
= 73A
I
D
= 36.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
3.1
0 30 60 90 120 150 180
I
D
- Amperes
R
DS(on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXFN 73N30Q
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 73N30Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Fig. 11. Capacitance
10 0
10 0 0
10000
0 10203040
V
DS
- Volts
Capacitance - pF
C
iss
C
oss
C
rss
f = 1M hz
Fig. 7. Input Admittance
0
30
60
90
12 0
15 0
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Volts
I
D
- Amperes
TJ = -40ºC
25ºC
125ºC
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th)JC
-
(ºC/W)
Fig. 8. Transconductance
0
20
40
60
80
10 0
12 0
0 30 60 90 120 150 180 210
I
D
- Amperes
G
fs
- Siemens
TJ = -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
30
60
90
12 0
15 0
18 0
0.4 0.6 0.8 1 1.2 1.4
V
SD
- Volts
I
S
- Amperes
TJ = 125ºC TJ = 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 50 100 150 200
QG - nanoCoulombs
VGS - Volts
VDS = 125V
ID = 36.5A
IG = 10mA
http://store.iiic.cc/
