Notes through are on page 8
www.irf.com 1
06/21/04
IRF8010SPbF
IRF8010LPbF
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
100V 15mΩ80A
PD - 95433
Applications
lHigh frequency DC-DC converters
lUPS and Motor Control
lLead-Free
Benefits
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
lTypical RDS(on) = 12mΩ
D2Pak
IRF8010S TO-262
IRF8010L
Absolute Maximum Rati ngs
Parameter Units
ID @ TC = 25°C Co nti n uous D rain Curr e nt, VGS @ 10V
ID @ TC = 100° C Co nti n uous D rain Curr e nt, VGS @ 10V A
IDM
Pulsed D r ain C urrent
c
PD @TC = 25°C Power Dissipation W
Linear Derati ng Fact or W/°C
VGS Gat e- to-Source Volt age V
dv/dt
P ea k Di od e R ec ov er y dv/dt
e
V/ns
TJ Operatin g Juncti on and
TSTG Stor ag e Tem pe r atur e Ra ng e °C
Soldering Temperature, for 10 seconds
Therm al Resistan ce
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.57
RθJC
Junc tio n-to-Case ( en d of l ife)
g
––– 0.80 °C/W
RθCS Ca s e- to- S i n k , Fl at, Gr ea s ed Sur face 0. 5 0 –––
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
16
-55 to + 17 5
300 (1.6m m from case )
Max.
80
i
57
320
260
1.8
± 20
IRF8010S/LPbF
2www.irf.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS D r ai n- to- Sour c e B reak dow n V oltage 100 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J Breakdow n Voltage Temp. Co efficient ––– 0.11 ––– V/°C
R
DS(on) Stati c D rain- to- Sour c e O n- Res i s tanc e ––– 12 15
m
Ω
V
GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS Dr ai n- to- Sour c e Leak age Cu rr en t ––– ––– 20 µA
––– ––– 250
I
GSS Gate-to- S our c e For war d Leak age ––– ––– 200 nA
Gate- to- Sou r c e R ev er s e Leak age ––– ––– -20 0
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs For ward Tr ansconductanc e 82 ––– ––– V
Q
gTotal Gat e Charge ––– 81 120
Q
gs Gate- to- Sou r c e C har ge ––– 22 – –– nC
Q
gd Gate-to-Drai n ( " M iller") Char ge ––– 26 –––
t
d(on) Turn-On Delay Time ––– 15 –––
t
rRise Time ––– 13 0 –––
t
d(off) Turn-Off Delay Ti me ––– 61 ––– ns
t
fFall Time –– – 120 –––
C
iss Input Capacitance ––– 3830 –––
C
oss Output Capacitance ––– 480 –––
C
rss Reve r s e Tr a ns fer Capac it a nc e ––– 59 ––– pF
C
oss Output Capacitance ––– 3830 –––
C
oss Output Capacitance ––– 280 –––
C
oss
eff.
Ef f e ctive O utput Capac it a nce ––– 530 –––
Avalanche C haracteri stics
Parameter Units
E
AS
Si ngle P ul se Ava l a nc he E n er g y
di
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanch e Energy
c
mJ
Diode Charac teri stics
Pa ra me t e r Min. Typ . Max . Units
ISContinuous Source Cur rent ––– ––– 80
(Body Diode) A
ISM Pulsed Source Current ––– ––– 320
(Body Diode)
ci
VSD Diode Fo rward Voltage –– – ––– 1.3 V
trr Reverse Recovery Time ––– 99 150 ns
Qrr Reverse RecoveryCharge ––– 460 700 nC
ton Forward Turn-On Time Intrinsic tur n-on time is negligib le (turn-on is domina ted by LS+LD)
VGS = 20V
VGS = -20V
Max.
VGS = 0 V, VDS = 1.0V, ƒ = 1.0MH
z
VGS = 0 V, VDS = 80V, ƒ = 1. 0M H
z
VGS = 0V, VDS = 0V to 80V
e
VGS = 10V
f
VDD = 50V
ID = 80A
RG = 39Ω
TJ = 25°C, IS = 80A, VGS = 0V
f
TJ = 150°C, IF = 80A, VDD = 50V
di /dt = 100A/ µ s
f
Conditions
VGS = 0V, ID = 25 0µA
Refe rence to 2 5 °C, ID = 1mA
VGS = 10V, ID = 45A
f
VDS = VGS, ID = 250µ A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integra l revers e
p-n junction diode.
Conditions
26
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1. 0M H z
310
45
Conditions
VDS = 25V , I D = 45A
ID = 80A
VDS = 80V
Typ.
–––
–––
–––
IRF8010S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Dra in-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
80A
0.1 110 100
VDS, Drai n-to-Source Vol t age (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
4.0V
20µs PULSE WID TH
Tj = 25°C
VGS
TOP 15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
0.1 110 100
VDS, Dr ain-to- Source Voltage (V )
1
10
100
1000
ID, Drain-to-Source Current (A)
4.0V
20µs PU LSE WIDTH
Tj = 175° C
VGS
TOP 15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V )
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 50V
20µs PU LSE WIDTH
IRF8010S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
V ,Source-to-Drain Voltage (V)
I , R ev ers e D rain C urrent (A)
SD
SD
V = 0 V
GS
T = 175 C
J°
T = 25 C
J°
110 100
VDS, Dr ain-to- Source Voltage (V )
10
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
1 10 100 1000
VDS, Drain-to-Sour ce Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175° C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
0 20406080100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 80A
IRF8010S/LPbF
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
20
40
60
80
T , Case Temperature ( C )
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF8010S/LPbF
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
100
200
300
400
500
600
E , Single Pulse Avalanche Energy (mJ)
AS
ID
TOP
BOTTOM
18A
32A
45A
Starting Tj, Junction Temperature (°C)
IRF8010S/LPbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF8010S/LPbF
8www.irf.com
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly l ine
po s ition in d icat es "Lead-F ree"
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN T HE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NU MBE
R
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = AS S E MB LY S IT E CODE
WE EK 02
P = D E S IGNAT ES LEAD -FRE E
PRODUCT (OPTIONAL )
RECTIFIER
INTERNATIONAL
LOGO
LOT C ODE
AS S E MB L Y YEAR 0 = 2000
DATE CODE
PAR T NU MBER
IRF8010S/LPbF
www.irf.com 9
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
A SSEMBLED ON WW 19, 1997
Note: "P" in assembly line
pos ition indicates "Lead-Free"
IN TH E ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE C ODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
WEEK 19
YEAR 7 = 1997
DATE CO DE
OR
IRF8010S/LPbF
10 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, IAS = 45A.
ISD ≤ 45A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rth(jc) (end of life) is the maximum measured value
after 1000 temperature cycles from -55 to 150°C and
is accounted for by the physical wearout of the die attach
medium in worse case PCB mounting condition of
material (solder/substrate), process and re-flow
temperature.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27. 4 0 (1. 0 79 )
23. 9 0 (. 94 1)
60.00 ( 2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROL LING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB .
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/