gc. BD Hes mess Di 1 min. Mourting torque to heatsink weight T, 780C 6 A Ty 26 C; 10 ms 450 A Ty 125 C; 10 ms 380 A Ty7 26C; 8,3 .. 10 ms 1000 Ats Ty 125 C; 6,310 ms T20 Ars Ty 28 C; 7A man. 1,5 v Ty 128C: 1 Vv Ty 126C 10 mid Ty 7 125 C: Yoo * Ves? Mng 7 Vane mex. 10 rr Ty? 26 "Gilg = 1.4 digit 1 Ajps 1 ps Vp = O67 ~ Weve 2 Hs Ty 7 125 C; dc max. 1000 Vips Ty 126 C: dc: f= 60.60 He mex. 6D Alps Ty 125 C; dc; ofp. a0 ps Ty" 26 "Cy dlc: tip. imax. aos 150 mia, Ty7 26 "Cr dic Rig = 33 41B0 300 rr Ty 26 C; dc. min. 2 v T= 26 0; dc. min. 100 rr Ty 128C; dc. max. 0.25 v Ty 125 C: dic. mak. & mm, Per thifristar 12 Ky KAN Terminals, 10s 260 "c. 0A 12B ce 404126 "c. Vv Aen mi's 5 S00 [ 2500 } eas eae by SEMIKRONFig. 3 Forward charactertstice of single thyristor 2 11-09-2003 SCT ion eae Ut EE I} tt f nw SK 70 DT a 1/6 SK 70 DT Teva ao A oe ra id a0 | 12 4p a] 1 a re 08 26 al ra P a oe TST LT p 0.4 o % 2 @ 4 8 6 To 10 Tea 1000 ih F i ms Fig. 1 Power dissipation vs. output current Filg.2 Surge overtoad current vs. ime tryristors'diodas KDoToo3 14 Eo Te 10 | Ul cw | *_ 46 SK 7-0 OT 12 V6 SK 70 OT BU 1 Ho} OA | 06 40) o4 "0 2 I | any od Oo 2 3 oon Oooo i ioe t a Fig.4 Transient thermal Impedance ws. time for elngle thyristor by SEMIKRONSK 70 DT Ono? oo i * *r 46 SK 70 OT fea eu q 4 ur iy ? 30644 fn 7064S ins? ? 2 as we 7 1das Pa4d8 aw Fig. 5 Gate trigger claracterletics Dimensions in mim l ahd Bz Case 715 (Suggested hole diameter for plastic mounting pins and solder pins Tt = | This technical information species semiconductor devices but promises mo characteristics. Wo warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 11-09-2003 SCT by SEMIKRON