SQM40N15-38
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S11-2035-Rev. C, 17-Oct-11 1Document Number: 65269
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Automotive N-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
•100 % R
g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) 150
RDS(on) () at VGS = 10 V 0.038
RDS(on) () at VGS = 6 V 0.040
ID (A) 40
Configuration Single
D
G
S
N-Channel MOSFET
TO-263
SDG
Top View
ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM40N15-38-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
40
A
TC = 125 °C 23
Continuous Source Current (Diode Conduction)aIS100
Pulsed Drain CurrentbIDM 80
Single Pulse Avalanche Current L = 0.1 mH IAS 40
Single Pulse Avalanche Energy EAS 80 mJ
Maximum Power DissipationbTC = 25 °C PD
166 W
TC = 125 °C 55
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountcRthJA 40 °C/W
Junction-to-Case (Drain) RthJC 0.9
SQM40N15-38
www.vishay.com Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11 2Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 150 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 150 V - - 1.0
μA VGS = 0 V VDS = 150 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 150 V, TJ = 175 °C - - 250
On-State Drain Currenta I
D(on) V
GS = 10 V VDS5 V 50 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 15 A - 0.027 0.038
VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.078
VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.105
VGS = 6 V ID = 10 A - 0.030 0.040
Forward Transconductancebgfs VDS = 15 V, ID = 15 A - 40 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 2710 3390
pF Output Capacitance Coss - 310 390
Reverse Transfer Capacitance Crss - 130 165
Total Gate ChargecQg
VGS = 10 V VDS = 75 V, ID = 85 A
-4670
nC Gate-Source ChargecQgs -20-
Gate-Drain ChargecQgd -11-
Gate Resistance Rgf = 1 MHz 1 2 3
Turn-On Delay Timectd(on)
VDD = 75 V, RL = 0.88
ID 85 A, VGEN = 10 V, Rg = 1
-1421
ns
Rise Timectr -1726
Turn-Off Delay Timectd(off) -2436
Fall Timectf -914
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM --80A
Forward Voltage VSD IF = 85 A, VGS = 0 - 0.95 1.5 V
SQM40N15-38
www.vishay.com Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11 3Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
16
32
48
64
80
03691215
V
GS
=10Vthru6V
V
GS
=4V
V
GS
=5V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
20
40
60
80
100
0 1224364860
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
1000
2000
3000
4000
5000
0 20406080100
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
16
32
48
64
80
0246810
TC= 125 °C
TC= 25 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
0
0.02
0.04
0.06
0.08
0.10
0 1632486480
VGS =10V
VGS =6V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 1020304050
ID=85A
VDS=75V
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
SQM40N15-38
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S11-2035-Rev. C, 17-Oct-11 4Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
ID=15A
VGS =10V
TJ - Junction Temperature (°C)
(Normalized)
RDS(on) - On-Resistance
0
0.04
0.08
0.12
0.16
0.20
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
= 25 °C
T
J
= 150 °C
- 1.8
- 1.3
- 0.8
- 0.3
0.2
0.7
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=5mA
I
D
= 250 μA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
- 50 - 25 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID=10mA
145
153
161
169
177
185
SQM40N15-38
www.vishay.com Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11 5Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
T
C
= 25 °C
Single Pulse
10 ms
1 ms
R
DS(on)
*
Limited by
100 ms, 1 s, 10 s, DC
0.01
0.1
1
10
100
BVDSS Limited
100 µs
0.01 0.1 1 10 1000
100
I
DM
Limited
10
-4
10
-3
10
-2
10
-1
1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SQM40N15-38
www.vishay.com Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11 6Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65269.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
1
Package Information
www.vishay.com Vishay Siliconix
Revison: 30-Sep-13 1Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D2PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1 D4
AA
eb2
b
EAc2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010 M A M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c* Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1 Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
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Revision: 08-Feb-17 1Document Number: 91000
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