TLP621,TLP621−2,TLP621−4
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP621,TLP621−2,TLP621−4
Programmable Controller
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP621−2 offers two isolated channels in an eight lead plastic DIP,
which the TLP621−4 provides four isolated channels in a sixteen plastic
DIP.
• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Pin Configurations (top view)
TLP621 TLP621-2 TLP621-4
1 1 1
2 2 2
4
4 4
3
3 3
5
5
6
6
7
8
7
8 9
10
11
12
13
14
15
16
1: Anode
2: Cathode
3: Emitter
4: Collector
1, 3: Anode
2, 4: Cathode
5, 7: Emitter
6, 8: Collector
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector
TOSHIBA 11−5B2
Weight: 0.26 g (typ.)
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
TOSHIBA 11−20A3
Weight: 1.1 g (typ.)
Unit in mm
TLP621,TLP621−2,TLP621−4
2007-10-01
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● Current Transfer Ratio
Current Transfer Ratio
(%) (IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type
Classi−
fication
*1 Min. Max.
Marking Of
Classification
(None) 50 600 Blank, Y, Y■, G, G■, B, B■, GB
Rank Y 50 150 Y, Y■
Rank GR 100 300 G, G■
Rank BL 200 600 B, B■
TLP621
Rank GB 100 600 G, G■, B, B■, GB
(None) 50 600 Blank, GR, BL, GB
TLP621−2
TLP621−4 Rank GB 100 600 GR, BL, GB
*1: Ex. rank GB: TLP621 (GB)
(Note) Application type name for certification test, please use standard product type name, i.e.
TLP621 (GB): TLP621
TLP621−2 (GB): TLP621−2
Made In Japan Made In Thailand
UL recognized E67349 *2 E152349 *2
BSI approved 6508, 7445 *3 6505, 7445 *3
SEMKO approved 9735090 / 01 *4 ―
*2 UL1577
*3 BS EN60065: 2002, BS EN60950-1: 2002
*4 EN60950 (approved is TLP621 only)
TLP621,TLP621−2,TLP621−4
2007-10-01
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• Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no. 40009302
Maximum operating insulation voltage: 890 VPK
Highest permissible over voltage: 8000 VPK
(Note) When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)”
7.62 mm pich 10.16 mm pich
standard type (LF2) type
• Creepage distance : 6.4 mm (min.) 8.0 mm (min)
Clearance : 6.4 mm (min.) 8.0 mm (min)
Insulation thickness : 0.4 mm (min.) 0.4 mm (min)
TLP621,TLP621−2,TLP621−4
2007-10-01
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Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol
TLP621 TLP621−2
TLP621−4
Unit
Forward current IF 60 50 mA
Forward current derating ΔIF /°C −0.7 (Ta > 39°C) −0.5 (Ta = 25°C) mA /°C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
Power dissipation PD 100 70 mW
Power dissipation derating ΔPD /°C −1.0 −0.7 mW /°C
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 circuit) PC 150 100 mW
Collector power dissipation derating
(1 circuit, Ta ≥ 25°C) ΔPC /°C −1.5 −1.0 mW /°C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsol 260 (10 s) °C
Total package power dissipation PT 250 150 mW
Total package power dissipation derating
(Ta ≥ 25°C) ΔPT /°C −2.5 −1.5 mW /°C
Isolation voltage (Note 1) BVS 5000 (AC, 1min., R.H.≤ 60%) Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25
― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP621,TLP621−2,TLP621−4
2007-10-01
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V — — 10 μA
LED
Capacitance CT V = 0, f = 1 MHz — 30 — pF
Collector−emitter
breakdown voltage V(BR) CEO I
C = 0.5 mA 55 — — V
Emitter−collector
breakdown voltage V(BR) ECO I
E = 0.1 mA 7 — — V
VCE = 24 V — 10 100 nA
Collector dark current ICEO
VCE = 24 V, Ta = 85°C — 2 50 μA
Detector
Capacitance (collector
to emitter) CCE V = 0, f = 1 MHz — 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 — —
%
IC = 2.4 mA, IF = 8 mA — — 0.4
— 0.2 —
Collector−emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB — — 0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V 1×1012 1014 — Ω
AC, 1 minute 5000 — —
AC, 1 second, in oil — 10000 —
Vrms
Isolation voltage BVS
DC, 1 minute, in oil — 10000 — Vdc
TLP621,TLP621−2,TLP621−4
2007-10-01
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn−on time ton — 3 —
Turn−off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
— 3 —
μs
Turn−on time tON — 2 —
Storage time tS — 15 —
Turn−off time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
— 25 —
μs
Fig. 1 Switching time test circuit
IF
RL
VCC
VCE VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
TLP621,TLP621−2,TLP621−4
2007-10-01
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TLP621 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
0
-20
80
40
20
0 20 40 60 80 100
60
100
120
TLP621-2
TLP621-4 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
0
-20
60
40
0 20 40 60 80 100
80
20
120
TLP621 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
240
-20
40
160
0 60 100 120
0
80
200
120
20 40 80
TLP621-2
TLP621-4 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
120
0
-20
40
0 40
100
80
60
20
20 60 80 100 120
TLP621 IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
3 10-3 10-2 10-1 3
30
300
100
1000
500
50
3 3 100
Pulse width ≤ 100μs
Ta = 25 ° C
TLP621-2
TLP621-4 IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
1000
500
300
100
50
30
10
3 10-3 3 10-2 3 100
Pulse width ≤ 100μs
Ta = 25 ° C
10-1 3
TLP621,TLP621−2,TLP621−4
2007-10-01
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ΔVF / ΔTa – I F
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (m V / °C )
1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1 0.3 3 10 30
ID – Ta
Ambient temperature Ta (°C)
Dark current ID (μA)
040 80 120 160
101
100
10-1
10-2
10-3
10-4
VCE = 24V
10V
5V
I
F – VF
Forward voltage VF (V)
Forward current IF (mA)
100
50
30
10
5
3
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
0.5
0.3
Ta = 25 ° C
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
500
300
100
0 0.4 0.8 1.2 1.6 2.0
50
30
10
5
3
1
2.4
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25 ° C
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
80
60
40
20
0
0 2 4 8
6 10
50mA
30mA
20mA
15mA
10mA
IF = 5mA
PC (MAX.)
Ta = 25 ° C
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
25
20
15
10
0
00.2 0.4 0.6 0.8 1.0 1.2 1.4
50mA 40mA
30mA
20mA
10mA
5mA
IF = 2mA
5
Ta = 25 ° C
TLP621,TLP621−2,TLP621−4
2007-10-01
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IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
500
300
100
50
30
10
5
0.3 1 3 10 30 100
Ta = 25 ° C
VCE = 5V
VCE = 0.4V
Sample B
Sample A
VCE (sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
Voltage VCE (sat) (V)
-20 020 40 60 80 100
0.20
0.16
0.12
0.08
0.04
0
IF = 5mA
IC = 1mA
Switchingtime – RL
Load resistance RL (kΩ)
Switching time (μs)
1000
500
300
30
100
50
10
1310 30 100 300
5
3
1
Ta = 25 ° C
IF = 16mA
VCC = 5V
tOFF
ts
tON
IC – IF
Forward current IF (mA)
Collector current IC (mA)
100
50
30
10
5
3
0.5
0.3 1 3 10 30 100
Sample A
Sample B
1
0.3
0.1
0.05
0.03
Ta = 25 ° C
VCE = 5V
VCE = 0.4V
IC – Ta
Ambient temperature Ta (°C)
Collector current IC (mA)
100
50
30
1
-20 0 20 40 80
100
25mA
10mA
5mA
1mA
I
F
= 0.5mA
10
5
3
0.5
0.3
0.1
60
VCE = 5V
TLP621,TLP621−2,TLP621−4
2007-10-01
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
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noncompliance with applicable laws and regulations.
