ST330C..L Series
2222222222222
12
D-320
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST330C..L Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.0
tqTypical turn-off time 100
µs
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
V V mA
04 400 500
08 800 900
ST330C..L 12 1200 1300 50
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 650 (314) A180° conduction, half sine wave
@ Heatsink temperature 55 (75) °Cdouble side (single side) cooled
IT(RMS) Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 At = 8.3ms reapplied
7570 t = 10ms100% VRRM
7920 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
370 t = 8.3ms reapplied
287 t = 10ms 100% VRRM
262 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 4050 KA2√st = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.90 VIpk= 1730A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.57 (I > π x IT(AV)),TJ = TJ max.
Parameter ST330C..L Units Conditions
0.93 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
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