www.irf.com 18/22/02
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
12V 8.5mΩ27nC
Notes through are on page 9
PD - 94536
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7
RθJA Junction-to-Ambient (PCB mount)* –– – 40 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 12 V
VGS Gate-to-Source Voltage ± 12 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 84
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 60A
IDM Pulsed Drain Current320
PD @TC = 25°C Maximum Power Dissipation 88 W
PD @TC = 100°C Maximum Power Dissipation 44 W
Linear Derating Factor 0.59 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on)
lFully Characterized Avalanche Voltage
and Current
lHigh Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
lPower Management for Netcom,
Computing and Portable Applications.
D-Pak I-Pak
IRLR3802 IRLU3802
IRLR3802
IRLU3802
IRLR/U3802
2www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.81 1.2 V TJ = 25°C, IS = 12A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V
trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 12A, VR=20V
Qrr Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 50 75 ns TJ = 125°C, IF = 12A, VR=20V
Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs
S
D
G
Diode Characteristics
84
320
A
VSD Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, I D = 250µA
∆ΒVDSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.009 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.5 8.5 VGS = 4.5V, ID = 15A
––– ––– 30 VGS = 2.8V, ID = 12A
VGS(th) Gate Threshold Voltage 0.6 ––– 1.9 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C
––– ––– 100 µA VDS = 9.6V, VGS = 0V
––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V
gfs Forward Transconductance 31 ––– ––– S VDS = 6.0V, ID = 12A
QgTotal Gate Charge –– – 2 7 4 1
Qgs1 Pre-Vth Gate-Source Charge ––– 3.6 –– – VDS = 6.0V
Qgs2 Post-Vth Gate-Source Charge ––– 2.0 – –– VGS = 5.0V
Qgd Gate-to-Drain Charge ––– 10 ––– nC ID = 6.0A
Qgodr Gate Charge Overdrive ––– 11 ––– See Fig.16
Qsw Switch Charge (Qgs2 + Qgd) ––– 12 –––
Qoss Output Charge –– – 2 8 –– – nC VDS = 10V, VGS = 0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 6.0V, V GS = 4.5V
trRise Time ––– 14 ––– ns ID = 12A
td(off) Turn-Off Delay Time ––– 21 ––– Clamped Inductive Load
tfFall Time ––– 17 –––
Ciss Input Capacitance –– – 2490 ––– VGS = 0V
Coss Output Capacitance ––– 2150 ––– pF VDS = 6.0V
Crss Reverse Transfer Capacitance ––– 530 ––– ƒ = 1.0MHz
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
mΩRDS(on) Static Drain-to-Source On-Resistance
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 300 mJ
IAR Avalanche Current––– 20 A
Avalanche Characteristics
IRLR/U3802
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
1.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
B O TT OM 1. 5V
0.1 110
VDS, Dr ain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
1.5V
20µs P ULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4. 5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTT OM 1.5V
1.0 2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
0
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 5.0V
20µs PU LSE WIDT H
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junct ion Temperatur e (°C)
0.5
1.0
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 84A
VGS = 4.5V
IRLR/U3802
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + C
gd, Cds SHORTED
Crss = C
gd
Coss = C
ds + C
gd
0 1020304050
QG T otal Gate C harge (nC )
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 12V
ID= 6.0A
0 1 10 100
VDS , Drain-toS ou rce Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-toDr ain Voltage ( V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
IRLR/U3802
www.irf.com 5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
25 50 75 100 125 150 175
TC , C ase Temperature (°C)
0
20
40
60
80
100
ID , Drain Current (A)
LIMITED BY PACKAGE
VGS
VDS
90%
10%
td(on) td(off)
tftr
VGS
Puls e Width < 1µs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
IRLR/U3802
6www.irf.com
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 14. Gate Charge Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 13. Threshold Voltage Vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS(th) Gate threshold Voltage (V)
ID = 250µA
25 50 75 100 125 150 175
Start ing TJ, Junct ion Temperature (°C)
0
1000
2000
3000
4000
5000
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 8.0A
14A
BOTTOM 20A
IRLR/U3802
www.irf.com 7
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
IRLR/U3802
8www.irf.com
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
4. 57 (.180 )
2.28 (.090)
2X 1.14 (.045)
0.76 (.030)
1. 52 (.060 )
1. 15 (.045 )
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN.
0. 58 (.023 )
0. 46 (.018 )
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.410)
9.40 (.370)
NOTES:
1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROL LIN G DIME NSIO N : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIM ENSI O NS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DI P MAX. +0.16 (.006).
INTERNATIONAL
LOGO
RECTIFIER
34
12
IRFU120
916A
LOT CODE
ASSEMBLY
EXAMPLE:WITH ASSEMBLY
THIS IS AN IRFR120
YEAR 9 = 199
9
DATE CODE
LINE A
WEEK 16
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 16, 1999
LOT CODE 1234
PART NUMBE
R
IRLR/U3802
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
6.73 (.265)
6.35 (.250)
- A -
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
1.14 (.045)
0.76 (.030)
5.46 ( .215 )
5.21 ( .205 ) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018) LEAD ASS IGNMENTS
1 - GATE
2 - DRAIN
3 - SO URCE
4 - DRAIN
NOTES:
1 DI ME NS I O NING & TOLE RA NCING PER ANSI Y14.5M, 1982.
2 CON TROL L ING DI MENSIO N : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
9.65 (.380)
8.89 (.350)
2X
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.45 ( .24 5)
5.68 ( .22 4)
0.58 (.023)
0.46 (.018)
IRFU120
919A
RECTIFIER
LOGO
INTERNATIONAL
ASSEMBLY
LOT CODE
5678
EXAMPLE:WITH ASSEMBLY
THIS IS AN IRFR120
WEEK 19
LINE A
YEAR 9 = 1999
DATE CODE
PART NUMBER
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 19, 1999
LOT CODE 5678
IRLR/U3802
10 www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRE CTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CO NTRO LLING DIMENSION : MILL IMETE R.
2. ALL DIMEN SIONS ARE SHOWN IN MILLIMET ERS ( INCHES ).
3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrialmarket.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.8/02
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
