PN2222ATFR - Fairchild

DATA SH EET

Product data sheet

Supersedes data of 1999 May 21 2004 Oct 11

DISCRETE SEMICONDUCTORS

PN2222A

NPN switching transistor

ook, halfpage

M3D186

2004 Oct 11 2

NXP Semiconductors Product data sheet

NPN switching transistor PN2222A

FEATURES

•High current (max. 600 mA)

•Low voltage (max. 40 V).

APPLICATIONS

•General purpose s witc hing and linear amplification.

DESCRIPTION

NPN switching trans ist or in a TO-92; SOT54 plastic

package. PNP complemen t: PN2907A.

PINNING

PIN DESCRIPTION

1collector

2base

3emitter

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

handbook, halfpage

MAM279

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PN2222A SC-43A plastic single-ended leaded (thro ugh hole) package; 3 leads SOT54

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −75 V

VCEO collector-emitter voltage open base −40 V

VEBO emitter-base voltage open collector −6 V

ICcollector current (DC) −600 mA

ICM peak collector current −800 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C−500 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

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NPN switching transistor PN2222A

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-of f cu rrent VCB = 60 V; I E = 0 A −10 nA

VCB = 60 V; I E = 0 A; Tj = 125 °C−10 µA

IEBO emitter-base cu t-off current VEB = 3 V; IC = 0 A −10 nA

hFE DC current gain VCE = 10 V; I C = 0.1 mA 35 −

VCE = 10 V; I C = 1 mA 50 −

VCE = 10 V; I C = 10 mA 75 −

VCE = 10 V; I C = 10 mA; Tj = −55 °C35 −

VCE = 1 V; IC = 150 mA 50 −

VCE = 10 V; I C = 150 mA 100 300

VCE = 10 V; I C = 500 mA 40 −

VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA −300 mV

IC = 500 mA; IB = 50 mA 1−V

VBEsat base-emitt er saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V

IC = 500 mA; IB = 50 mA −2 V

Cccollector capacitance VCB = 10 V; I E = ie = 0 A; f = 1 MHz −8pF

Ceemitter cap a citance VEB = 500 mV; IC = ic = 0 A; f = 1 MHz −25 pF

fTtransition freque ncy VCE = 20 V; I C = 20 mA; f = 100 MHz 300 −MHz

Fnoise figure VCE = 5 V; IC = 100 µA; RS = 1 kΩ;

f = 1 kHz −4dB

Switching times (between 1 0 % and 90 % le vels); see Fig.2

ton turn-on time ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA; Tamb = 25 °C−35 ns

tddelay time −15 ns

trrise time −20 ns

toff turn-off time −250 ns

tsstorage time −200 ns

tffall time −60 ns

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor PN2222A

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

scilloscope oscilloscop

Fig.2 Test circuit for switching times.

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = −3.5 V; VCC = 29.5 V.

Oscilloscope: input impedance Zi = 50 Ω.

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor PN2222A

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT5

e1e

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor PN2222A

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document orde r number: 9397 750 13618