BSR16 BSR16 PNP General Purpose Amplifier * This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. * Sourced from Process 63. * See BCW68G for Characteristics. 3 2 1 SOT-23 Mark: T8 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value -60 Units V VCBO VEBO Collector-Base Voltage -60 V Emitter-Base Voltage -5.0 IC Collector Current V -800 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. (c)2002 Fairchild Semiconductor Corporation Rev. A, July 2002 Symbol Off Characteristics Parameter Test Condition Min. Typ. Max. Units BV(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -60 V BV(BR)CBO Collector-Base Breakdown Voltage IC = -100A, IE = 0 -60 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = -10A, IC = 0 -5.0 ICBO Collector Cut-off Current VCB = -50V VCB = -50V, TA = 150C -10 -10 nA A ICEX Collector Cut-off Current VCE = -30V, VEB = -0.5V -50 nA IBEX Reverse Base Current VCE = -30V, VEB = -3.0V -50 nA V On Characteristics hFE DC Current Gain 75 100 100 100 50 IC = -0.1mA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE= -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -0.4 -1.6 V V VBE(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -1.3 -2.6 V V Small Signal Characteristics fT Current Gain Bandwidth Product IC = -50mA, VCE = -20V, f = 100MHz, TA = 25C Ccb Output Capacitance VCB = -10V, IE = 0, f = 1.0MHz 8.0 pF Ceb Emitter-Base Capacitance VCB = -2.0V, IE = 0, f = 1.0MHz 30 pF VCC = -30V, IC = -150mA, IB1 = -15mA 45 ns 10 ns 40 ns 200 MHz Switching Characteristics ton Turn-On Time td Delay Time tr Rise Time toff Turn-Off Time ts Storage Time tf Fall Time VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 100 ns 80 ns 30 ns Thermal Characteristics TA=25C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25C Max. 350 2.8 Units mW mW/C RJA Thermal Resistance, Junction to Ambient 357 C/W * Device mounted on FR-4 PCB 40mm x 40mm x 1.5mm (c)2002 Fairchild Semiconductor Corporation Rev. A, July 2002 BSR16 Electrical Characteristics Ta=25C unless otherwise noted BSR16 Package Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM VCXTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. H7