PD - 95261A IRF5852PbF HEXFET(R) Power MOSFET l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS(on) max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. * ' 6 * ' TSOP-6 6 Top View This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 2.7 2.2 11 0.96 0.62 7.7 12 -55 to + 150 V mW/C V C Max. Units 130 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 04/20/10 IRF5852PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.60 5.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 4.0 0.95 0.88 6.6 1.2 15 2.4 400 48 32 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.090 VGS = 4.5V, ID = 2.7A 0.120 VGS = 2.5V, ID = 2.2A 1.25 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 2.7A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 6.0 ID = 2.7A --- nC VDS = 16V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- R G = 6.2 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 0.96 11 --- --- --- --- 25 6.5 1.2 38 9.8 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.96A, VGS = 0V TJ = 25C, IF = 0.96A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF5852PbF 100 100 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 1.50V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 100 TJ = 150 C 1 V DS = 15V 20s PULSE WIDTH 3.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C www.irf.com 10 100 Fig 2. Typical Output Characteristics 2.0 2.5 1 VDS , Drain-to-Source Voltage (V) 100 2.0 20s PULSE WIDTH TJ = 150 C 0.1 0.1 Fig 1. Typical Output Characteristics 0.1 1.5 1.50V 1 VDS , Drain-to-Source Voltage (V) 10 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP TOP ID = 2.7A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5852PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 500 Ciss 400 300 200 100 Coss Crss 0 1 10 10 VGS , Gate-to-Source Voltage (V) 600 ID = 2.7A VDS = 16V VDS = 10V 8 6 4 2 0 100 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 6 8 100 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 10 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 10 100us 1ms 1 10ms 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.4 TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5852PbF 3.0 RD VDS I D , Drain Current (A) 2.5 V GS RG 2.0 D.U.T. + - VDD 4.5V 1.5 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 0.0 90% 25 50 75 100 125 TC , Case Temperature ( C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.14 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () IRF5852PbF 0.12 0.10 ID = 2.7A 0.08 0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.30 0.20 VGS = 2.5V 0.10 VGS = 4.5V 0.00 0 2 VGS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage 4 6 8 10 12 ID , Drain Current (A) Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG 4.5 V QGS 50K 12V .2F .3F QGD VG D.U.T. + V - DS VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRF5852PbF 24 1.2 1.0 ID = 250A 16 Power (W) VGS(th) , Variace ( V ) 20 0.8 12 8 0.6 4 0 0.4 -75 -50 -25 0 25 50 75 100 125 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com 150 0.001 0.010 0.100 1.000 10.000 Time (sec) Fig 15. Typical Power Vs. Time 7 IRF5852PbF TSOP-6 Package Outline TSOP-6 Part Marking Information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www.irf.com 8 5 $ ( < ( ' 2 & ( 7 $ ' 5 ( % 0 8 1 7 5 $ 3 V WH R 1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ IRF5852PbF TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2010 www.irf.com 9