Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.7
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 2.2 A
IDM Pulsed Drain Current 11
PD @TA = 25°C Power Dissipation 0.96
PD @TA = 70°C Power Dissipation0.62
Linear Derating Factor 7.7 mW/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
04/20/10
Parameter Max. Units
RθJA Maximum Junction-to-Ambient130 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
IRF5852PbF
HEXFET® Power MOSFET
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
Description
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLow Gate Charge
lLead-Free
lHalogen-Free
TSOP-6 Top View
VDSS RDS(on) max (W) ID
20 V 0.090@VGS = 4.5V 2.7A
0.120@VGS = 2.5V 2.2A
6
*
*
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'
6
PD - 95261A
IRF5852PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 0.96A, VGS = 0V
trr Reverse Recovery Time ––– 25 38 ns TJ = 25°C, IF = 0.96A
Qrr Reverse Recovery Charge ––– 6.5 9.8 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
11
0.96
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.090 VGS = 4.5V, ID = 2.7A
––– ––– 0.120 VGS = 2.5V, ID = 2.2A
VGS(th) Gate Threshold Voltage 0.60 ––– 1.25 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.2 ––– ––– S VDS = 10V, ID = 2.7A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
QgTotal Gate Charge ––– 4.0 6.0 ID = 2.7A
Qgs Gate-to-Source Charge ––– 0.95 ––– nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– 0.88 ––– VGS = 4.5V
td(on) Turn-On Delay Time ––– 6.6 ––– VDD = 10V
trRise Time ––– 1.2 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.2Ω
tfFall Time ––– 2.4 ––– VGS = 4.5V
Ciss Input Capacitance ––– 400 ––– VGS = 0V
Coss Output Capacitance ––– 48 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 32 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF5852PbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
1.5 2.0 2.5 3.0
V = 15V
20µs PULSE W IDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
2.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF5852PbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
1 10 100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
02468
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D2.7A
V = 10V
DS
V = 16V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRF5852PbF
www.irf.com 5
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
4.5V
+
-
VDD
IRF5852PbF
6www.irf.com
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate -to -Source Voltage (V)
0.06
0.08
0.10
0.12
0.14
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 2.7A
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
4.5 V
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
024681012
ID , Drain Current (A)
0.00
0.10
0.20
0.30
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 4.5V
VGS = 2.5V
IRF5852PbF
www.irf.com 7
Fig 14. Threshold Voltage Vs. Tempera-
ture
Fig 15. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.4
0.6
0.8
1.0
1.2
VGS(th) , Variace ( V )
ID = 250µA
0.001 0.010 0.100 1.000 10.000
Time (sec)
0
4
8
12
16
20
24
Power (W)
IRF5852PbF
8www.irf.com
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF5852PbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2010
TSOP-6 Tape & Reel Information
