BCV62,235 - NXP - Pdf.Support

1. Product profile

1.1 General description

PNP general-purpose double transistors in a small SOT143B Surface-Moun ted

Device (SMD) plastic package.

1.2 Features and benefits

Low current (max . 1 00 mA)

Low voltage (max. 30 V)

Matched pairs

AEC-Q101 qualified

Small SMD plastic package

1.3 Applications

Applications with working point independent of temperature

Current mirrors

1.4 Quick reference data

BCV62

PNP general-purpose double transistors

Rev. 4 — 26 July 2010 Product data sheet

Table 1. Product overview

Type number Package NPN complement

NXP JEITA

BCV62 SOT143B - BCV61

BCV62A BCV61A

BCV62B BCV61B

BCV62C BCV61C

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

VCEO collector-emitter voltage open base - - −30 V

ICcollector current - - −100 mA

Transistor TR1

hFE DC current gai n VCE =−5V; I

C=−100 μA 100 - -

VCE =−5V; I

C=−2 mA 100 - 800

Product data sheet Rev. 4 — 26 July 2010 2 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Transistor TR2

hFE DC current gai n VCE =−5V; I

C=−2mA

BCV62 100 - 800

BCV62A 100 - 250

BCV62B 220 - 475

BCV62C 420 - 800

Table 2. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 collector TR2;

base TR1 and TR2

2 collector TR1

3emitterTR1

4emitterTR2 21

006aaa84

TR2 TR1

Table 4. Ordering information

Type number Package

Name Description Version

BCV62 - plastic surface-mounted package; 4 leads SOT143B

BCV62A

BCV62B

BCV62C

Table 5. Marking codes

Type number Marking code[1]

BCV62 3M*

BCV62A 3J*

BCV62B 3K*

BCV62C 3L*

Product data sheet Rev. 4 — 26 July 2010 3 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

6. Thermal characteristics

[1] Device mounted on an FR4 PCB.

7. Characteristics

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transis tor

VCBO collector-base voltage open emitter - −30 V

VCEO collector-emitter voltage open base - −30 V

VEBS emitter-b a s e vo ltage VCE =0V - −6V

ICcollector current - −100 mA

ICM peak collector current - −200 mA

IBM peak base current - −200 mA

Per device

Ptot total power dissipation Tamb ≤25 °C[1] -250mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction

to ambient in free air [1] - - 500 K/W

Table 8. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Transistor TR1

ICBO collector-base

cut-off current VCB =−30 V; IE=0A - - −15 nA

VCB =−30 V; IE=0A;

Tj= 150 °C--−5μA

IEBO emitter-base

cut-off current VEB =−5V; I

C=0A - - −100 nA

hFE DC current gai n VCE =−5V;

IC=−100 μA100 - -

VCE =−5V; I

C=−2 mA 100 - 800

VCEsat collector-emitter

saturation voltage IC=−10 mA;

IB=−0.5 mA -−75 −300 mV

IC=−100 mA;

IB=−5mA -−250 −650 mV

Product data sheet Rev. 4 — 26 July 2010 4 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

[3] Device, without emitter resistors, mounted on an FR4 PCB.

VBEsat base-emitter

saturation voltage IC=−10 mA;

IB=−0.5 mA [1] -−700 - mV

IC=−100 mA;

IB=−5mA [1] -−850 - mV

VBE base-emitter voltage IC=−2mA; V

CE =−5V [2] −600 −650 −750 mV

IC=−10 mA; VCE =−5V [2] --−820 mV

fTtransition frequency VCE =−5V;

IC=−10 mA;

f=100MHz

100 - - MHz

Cccollector capacitance VCB =−10 V;

IE=i

e=0A -4.5-pF

NF noise figure VCE =−5V;

IC=−200 μA; RS=2kΩ;

f = 1 kHz; B = 200 Hz

--10dB

Transistor TR2

VEBS emitter-base voltage VCB =0V; I

E=−250 mA - - −1.5 V

VCB =0V; I

E=−10 μA−400--mV

hFE DC current gai n VCE =−5V; I

C=−2mA

BCV62 100 - 800

BCV62A 100 - 250

BCV62B 220 - 475

BCV62C 420 - 800

Transistors TR1 and TR2

IC1/IE2 current matching IE2 =−0.5 mA;

VCE1 =−5V;

Tamb ≤25 °C 0.7 - 1.3

Tamb ≤150 °C 0.7 - 1.3

IE2 emitter current 2 VCE1 =−5V [3] --−5mA

Table 8. Characteristics …continued

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 4 — 26 July 2010 5 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

VCE =−5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =−5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 1. BCV62A: DC current gain as a function of

collector current; typical values Fig 2. BCV62A: Base-emitter voltage as a function of

collector current; typical values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 3. BCV62A: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 4. BCV62A: Base-emitter saturation voltage as a

function of collector current; typical values

mgt711

200

300

400

500

hFE

100

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

mgt712

−1200

−1000

−800

−600

−400

−200

−10−2−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

mgt713

−104

−103

−102

−10

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

mgt714

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 4 — 26 July 2010 6 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

VCE =−5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =−5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 5. BCV62B: DC current gain as a function of

collector current; typical values Fig 6. BCV62B: Base-emitter voltage as a function of

collector current; typical values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 7. BCV62B: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 8. BCV62B: Base-emitter saturation voltage as a

function of collector current; typical values

mgt715

400

600

800

1000

hFE

200

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

mgt716

−1200

−1000

−800

−600

−400

−200

−10−2−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

mgt717

−104

−103

−102

−10

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

mgt718

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 4 — 26 July 2010 7 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

VCE =−5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =−5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 9. BCV62C: DC current gain as a function of

collector current; typical values Fig 10. BCV62C: Base-emitter voltage as a function of

collector current; typical values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 11. BCV62C: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 12. BCV62C: Base-emitter saturation voltage as a

function of collector current; typical values

mgt719

400

600

800

1000

hFE

200

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

mgt720

−1200

−1000

−800

−600

−400

−200

−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

mgt721

−104

−103

−102

−10

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

mgt722

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 4 — 26 July 2010 8 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

8. Test information

IC1/IE2 =1.3

Fig 13. Maximum collector-emitter voltage as a function of emitter resistor

(see Figure 15)

mbk083

−30

−10

−20

10−11

−VCE1max

(V)

10 RE (Ω)102

IE2 =

1 mA

5 mA

10 mA

50 mA

Fig 14. Test circuit current matching

Fig 15. Current mirror with emitter resistors

006aaa84

−VCE1

IC1

TR2TR1 IE2 =

constant

006aac0

−VCE1

IC1

TR2TR1 IE2 =

constan

RERE

Product data sheet Rev. 4 — 26 July 2010 9 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 16. Package outline SOT143B

04-11-16Dimensions in mm

3.0

2.8 1.1

0.9

2.5

2.1

1.4

1.2

1.7

1.9

0.48

0.38

0.15

0.09

0.45

0.15

0.88

0.78

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantit y

3000 10000

BCV62 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235

BCV62A

BCV62B

BCV62C

Product data sheet Rev. 4 — 26 July 2010 10 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

11. Soldering

Fig 17. Reflow soldering footprint SOT143B

Fig 18. Wave soldering footprint SOT143B

solder lands

solder resist

occupied area

solder paste

sot143b_

0.9

0.60.7

3.25

0.6

(3×)

0.6

(3×)

0.5

(3×)

0.7

(3×)

1.9

0.75 0.95

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot143b_

4.6

4.45

1.2

(3×)

1.425

(3×)

1.425

1.2

2.2

2.575

Dimensions in mm

Product data sheet Rev. 4 — 26 July 2010 11 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCV62 v.4 20100726 Product data sheet - BCV62_3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Section 1 “Product profile”: amended

•Section 3 “Ordering information”: added

•Section 4 “Marking”: updated

•Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added

•Section 8 “Test information”: added

•Figure 16: superseded by mini mized package outline drawing

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

BCV62_3 19990408 Product specification - BCV62_CNV_2

BCV62_CNV_2 19970618 Product specification - -

Product data sheet Rev. 4 — 26 July 2010 12 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full dat a

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyon d those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental ,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or application s and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associate d with t heir

applications and products.

NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specificati on for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Producti on This document contains the product specification.

Product data sheet Rev. 4 — 26 July 2010 13 of 14

NXP Semiconductors BCV62

PNP general-purpose double transistors

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BCV62

PNP general-purpose double transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 July 2010

Document identifier: BCV62

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14